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公开(公告)号：US10162110B2
公开(公告)日：2018-12-25
申请号：US15243718
申请日：2016-08-22
发明人： Tatsuya Usami , Keiji Sakamoto , Yoshiaki Yamamoto , Shinichi Watanuki , Masaru Wakabayashi , Tohru Mogami , Tsuyoshi Horikawa , Keizo Kinoshita
摘要： A semiconductor device is provided with an insulating layer formed on a base substrate, an optical waveguide composed of a semiconductor layer formed on the insulating layer, and an insulating film formed along an upper surface of the insulating layer and a front surface of the optical waveguide. A peripheral edge portion of a lower surface of the optical waveguide is separated from the insulating layer, and the insulating film is buried between the peripheral edge portion and the insulating layer.
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公开(公告)号：US09985149B2
公开(公告)日：2018-05-29
申请号：US15244853
申请日：2016-08-23
发明人： Tatsuya Usami , Yoshiaki Yamamoto , Keiji Sakamoto , Tohru Mogami , Tsuyoshi Horikawa , Keizo Kinoshita
IPC分类号： H01L31/0232 , H01L31/18 , G02B6/12 , G02B6/136 , G02B6/122
CPC分类号： H01L31/02327 , G02B6/12004 , G02B6/122 , G02B6/136 , G02B2006/12061 , G02B2006/12123 , H01L31/1808
摘要： A performance of a semiconductor device is improved. In a method of manufacturing a semiconductor device, a first semiconductor portion and a second semiconductor portion made of silicon are formed on a base body via an insulation layer, and a third semiconductor portion including a semiconductor layer made of germanium is formed on the second semiconductor portion. Next, an insulation film is formed above the first semiconductor portion, an opening portion reaching the first semiconductor portion from an upper surface of the insulation film is formed, and a metal silicide layer is formed on a part of an upper surface of the first semiconductor portion exposed to the opening portion.
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公开(公告)号：US10295743B2
公开(公告)日：2019-05-21
申请号：US14827779
申请日：2015-08-17
发明人： Hiroyuki Kunishima , Yasutaka Nakashiba , Masaru Wakabayashi , Shinichi Watanuki , Ken Ozawa , Tatsuya Usami , Yoshiaki Yamamoto , Keiji Sakamoto
摘要： Disclosed is an optical semiconductor device which can be improved in light shift precision and restrained from undergoing a loss in light transmission. In this device, an inner side-surface of a first optical coupling portion of an optical coupling region and an inner side-surface of a second optical coupling portion of the region are increased in line edge roughness. This manner makes light coupling ease from a first to second optical waveguide. By contrast, the following are decreased in line edge roughness: an outer side-surface of the first optical coupling portion of the optical coupling region; an outer side-surface of the second optical coupling portion of the region; two opposed side-surfaces of a portion of the first optical waveguide, the portion being any portion other than the region; and two opposed side-surfaces of a portion of the second optical waveguide, the portion being any portion other than the region.
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公开(公告)号：US09899326B2
公开(公告)日：2018-02-20
申请号：US14923978
申请日：2015-10-27
发明人： Akira Nakajima , Yoshiaki Yamamoto
IPC分类号： H01L23/48 , H01L23/532 , H01L23/00 , H01L21/768
CPC分类号： H01L23/53238 , H01L21/76847 , H01L21/76867 , H01L21/76882 , H01L24/05 , H01L24/06 , H01L2224/05553
摘要： The reliability of a copper wire is improved without inhibiting the wiring resistance of the copper wire. For example, another metallic element segregates in the boundary region between a copper film CUF1 and a copper film CUF2, and at the upper side face part of a wiring gutter leading to the boundary region. In a sectional view, a metallic element having a reducing power higher than copper segregates at the inner part of the copper wire apart from both the surface of the copper wire and the bottom face of the wiring gutter and at the side face part of the copper wire. In a sectional view, a metallic element different from copper segregates in the vicinity of the center part of the copper wire and at the side face part of the copper wire.
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公开(公告)号：US09508662B2
公开(公告)日：2016-11-29
申请号：US14827841
申请日：2015-08-17
发明人： Hiroyuki Kunishima , Yasutaka Nakashiba , Masaru Wakabayashi , Shinichi Watanuki , Ken Ozawa , Tatsuya Usami , Yoshiaki Yamamoto , Keiji Sakamoto
CPC分类号： H01L23/60 , G02B6/43 , G02F1/0121 , G02F1/025 , G02F2201/12 , G02F2202/105 , H01L31/02002 , H01L2924/0002 , H05K1/0296 , H01L2924/00
摘要： A technique is provided which can prevent the quality of an electrical signal from degrading in an optical semiconductor device.In a cross-section perpendicular to an extending direction of an electrical signal transmission line, the electrical signal transmission line is surrounded by a shielding portion including a first noise cut wiring, second plugs, a first layer wiring, first plugs, a shielding semiconductor layer, first plugs, a first layer wiring, second plugs, and a second noise cut wiring, and the shielding portion is fixed to a reference potential. Thereby, the shielding portion blocks noise due to effects of a magnetic field or an electric field from the semiconductor substrate, which affects the electrical signal transmission line.
摘要翻译： 在垂直于电信号传输线的延伸方向的横截面中，电信号传输线由屏蔽部分包围，该屏蔽部分包括第一噪声切断布线，第二插塞，第一层布线，第一插塞，屏蔽半导体层 ，第一插头，第一层布线，第二插头和第二噪声切断布线，并且屏蔽部分被固定为参考电位。 因此，屏蔽部分由于影响电信号传输线的来自半导体衬底的磁场或电场的影响而阻塞噪声。
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公开(公告)号：US20160056115A1
公开(公告)日：2016-02-25
申请号：US14827841
申请日：2015-08-17
发明人： Hiroyuki Kunishima , Yasutaka Nakashiba , Masaru Wakabayashi , Shinichi Watanuki , Ken Ozawa , Tatsuya Usami , Yoshiaki Yamamoto , Keiji Sakamoto
CPC分类号： H01L23/60 , G02B6/43 , G02F1/0121 , G02F1/025 , G02F2201/12 , G02F2202/105 , H01L31/02002 , H01L2924/0002 , H05K1/0296 , H01L2924/00
摘要： A technique is provided which can prevent the quality of an electrical signal from degrading in an optical semiconductor device.In a cross-section perpendicular to an extending direction of an electrical signal transmission line, the electrical signal transmission line is surrounded by a shielding portion including a first noise cut wiring, second plugs, a first layer wiring, first plugs, a shielding semiconductor layer, first plugs, a first layer wiring, second plugs, and a second noise cut wiring, and the shielding portion is fixed to a reference potential. Thereby, the shielding portion blocks noise due to effects of a magnetic field or an electric field from the semiconductor substrate, which affects the electrical signal transmission line.
摘要翻译： 提供了可以防止电信号在光半导体器件中劣化的技术。 在垂直于电信号传输线的延伸方向的横截面中，电信号传输线由屏蔽部分包围，该屏蔽部分包括第一噪声切断布线，第二插塞，第一层布线，第一插塞，屏蔽半导体层 ，第一插头，第一层布线，第二插头和第二噪声切断布线，并且屏蔽部分被固定为参考电位。 因此，屏蔽部分由于影响电信号传输线的来自半导体衬底的磁场或电场的影响而阻塞噪声。
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公开(公告)号：US20160054521A1
公开(公告)日：2016-02-25
申请号：US14827779
申请日：2015-08-17
发明人： Hiroyuki Kunishima , Yasutaka Nakashiba , Masaru Wakabayashi , Shinichi Watanuki , Ken Ozawa , Tatsuya Usami , Yoshiaki Yamamoto , Keiji Sakamoto
CPC分类号： G02B6/125 , G02B6/136 , G02B2006/12061
摘要： Disclosed is an optical semiconductor device which can be improved in light shift precision and restrained from undergoing a loss in light transmission. In this device, an inner side-surface of a first optical coupling portion of an optical coupling region and an inner side-surface of a second optical coupling portion of the region are increased in line edge roughness. This manner makes light coupling ease from a first to second optical waveguide. By contrast, the following are decreased in line edge roughness: an outer side-surface of the first optical coupling portion of the optical coupling region; an outer side-surface of the second optical coupling portion of the region; two opposed side-surfaces of a portion of the first optical waveguide, the portion being any portion other than the region; and two opposed side-surfaces of a portion of the second optical waveguide, the portion being any portion other than the region.
摘要翻译： 公开了一种可以提高光偏移精度并且抑制光传输损失的光半导体装置。 在该装置中，光学耦合区域的第一光学耦合部分的内侧表面和该区域的第二光学耦合部分的内侧表面的线边缘粗糙度增加。 这种方式使光耦合容易从第一至第二光波导。 相比之下，线边缘粗糙度降低：光耦合区域的第一光耦合部分的外侧表面; 该区域的第二光耦合部分的外侧表面; 第一光波导的一部分的两个相对的侧表面，该部分是除该区域之外的任何部分; 以及第二光波导的一部分的两个相对的侧表面，该部分是该区域以外的任何部分。
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