- 专利标题: Electron emitting device using graphene and method for manufacturing same
-
申请号: US15310627申请日: 2014-05-13
-
公开(公告)号: US09991081B2公开(公告)日: 2018-06-05
- 发明人: Shanghyeun Park , Donggu Lee , Ilhwan Kim , Jaekyung Sung , Changsoo Lee , Dongsu Kang , Euna Yu
- 申请人: SAMSUNG ELECTRONICS CO., LTD. , Kumoh National Institute of Technology Industry-Academic Cooperation Foundation
- 申请人地址: KR Gyeonggi-Do
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Gyeonggi-Do
- 代理机构: Cantor Colburn LLP
- 国际申请: PCT/KR2014/004247 WO 20140513
- 国际公布: WO2015/174554 WO 20151119
- 主分类号: H01J19/24
- IPC分类号: H01J19/24 ; H01J19/44 ; H01J19/38 ; H01J9/02 ; H01J1/30 ; H01J9/14
摘要:
Disclosed are an electron emitting device using graphene and a method for manufacturing the same. The electron emitting device includes a metal holder having at least one slot, at least one emitter plate inserted into the slot to protrude from a first surface of the metal holder, and including an emitter supporting member and a graphene emitter attached onto the emitter supporting member, an insulation layer provided on the first surface of the metal holder, and a gate electrode provided on the insulation layer and including a gate supporting member and a graphene gate attached onto the gate supporting member.
公开/授权文献
信息查询