The embodiment relates to a semiconductor light-emitting device comprising a semiconductor substrate, a first cladding layer, an active layer, a second cladding layer, a contact layer, and a phase modulation layer located between the first cladding and active layers or between the active and second cladding layers. The phase modulation layer comprises a basic layer and plural first modified refractive index regions different from the basic layer in a refractive index. In a virtual square lattice set on the phase modulation layer such that the modified refractive index region is allocated in each of unit constituent regions constituting square lattices, the modified refractive index region is arranged to allow its gravity center position to be separated from the lattice point of the corresponding unit constituent region, and to have a rotation angle about the lattice point according a desired optical image.