Invention Grant
- Patent Title: Non-volatile ferroelectric logic with granular power-gating
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Application No.: US14975439Application Date: 2015-12-18
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Publication No.: US09997227B2Publication Date: 2018-06-12
- Inventor: Daniel H. Morris , Uygar E. Avci , Ian A. Young
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Green, Howard & Mughal LLP
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C11/22 ; H03K19/00 ; H03K19/18
Abstract:
Described is an apparatus which comprises: a first power domain having a first inverter to be powered by a first switchable positive supply and a first switchable negative supply; and a second power domain having a second inverter including p-type and n-type FE-FETs, the second inverter having an input coupled to an output of the first inverter.
Public/Granted literature
- US20170178711A1 NON-VOLATILE FERROELECTRIC LOGIC WITH GRANULAR POWER-GRATING Public/Granted day:2017-06-22
Information query
