Method for forming an interconnect structure, comprising the steps of: forming a recessed structure in a dielectric material on a substrate; at least partially filling said recessed structure with a metal chosen from the group consisting of copper, nickel and cobalt; introducing the substrate in a CVD reactor; bringing the substrate in the CVD reactor to a soak temperature and subsequently performing a soak treatment by supplying a germanium precursor gas to the CVD reactor at the soak temperature, thereby substantially completely converting the metal in the recessed structure to a germanide.