Invention Grant
- Patent Title: Support for long channel length nanowire transistors
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Application No.: US15401539Application Date: 2017-01-09
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Publication No.: US09997472B2Publication Date: 2018-06-12
- Inventor: Karthik Balakrishnan , Isaac Lauer , Tenko Yamashita , Jeffrey W. Sleight
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66 ; H01L23/00 ; H01L29/775 ; H01L29/423 ; H01L29/786 ; H01L21/02 ; B82Y10/00
Abstract:
A nanowire device includes a first component formed on a substrate and a second component disposed apart from the first component on the substrate. A nanowire is configured to connect the first component to the second component. An anchor pad is formed along a span of the nanowire and configured to support the nanowire along the span to prevent sagging.
Public/Granted literature
- US20170154959A1 SUPPORT FOR LONG CHANNEL LENGTH NANOWIRE TRANSISTORS Public/Granted day:2017-06-01
Information query
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