再颁专利
- 专利标题： Passivation layer for a circuit device and method of manufacture
- 专利标题（中）： 电路器件的钝化层及其制造方法
-
申请号： US13565302申请日： 2012-08-02
-
公开(公告)号： USRE44303E1公开(公告)日： 2013-06-18
- 发明人: John Bedinger , Michael A. Moore , Robert B Hallock , Kamal Tabatabaie , Thomas E. Kazior
- 申请人： John Bedinger , Michael A. Moore , Robert B Hallock , Kamal Tabatabaie , Thomas E. Kazior
- 申请人地址： US MA Waltham
- 专利权人： Raytheon Company
- 当前专利权人： Raytheon Company
- 当前专利权人地址： US MA Waltham
- 代理机构： Daly, Crowley, Mofford & Durkee, LLP
- 主分类号： H01L21/469
- IPC分类号： H01L21/469 ; H01L21/31 ; H01L23/58 ; H01L21/76
摘要：
According to one embodiment of the disclosure, a method for passivating a circuit device generally includes providing a substrate having a substrate surface, forming an electrical component on the substrate surface, and coating the substrate surface and the electrical component with a first protective dielectric layer. The first protective dielectric layer is made of a generally moisture insoluble material having a moisture permeability less than 0.01 gram/meter2/day, a moisture absorption less than 0.04 percent, a dielectric constant less than 10, a dielectric loss less than 0.005, a breakdown voltage strength greater than 8 million volts/centimeter, a sheet resistivity greater than 1015 ohm-centimeter, and a defect density less than 0.5/centimeter2.
信息查询
IPC分类:
