Invention Application
- Patent Title: ATOMIC LAYER DEPOSITION OF NOBLE METALS
- Patent Title (中): 原子层沉积金属
-
Application No.: PCT/US0332644Application Date: 2003-10-15
-
Publication No.: WO2004035858A3Publication Date: 2004-11-04
- Inventor: SENKEVICH JOHN J , LU TOH-MING
- Applicant: RENSSELAER POLYTECH INST , SENKEVICH JOHN J , LU TOH-MING
- Assignee: RENSSELAER POLYTECH INST,SENKEVICH JOHN J,LU TOH-MING
- Current Assignee: RENSSELAER POLYTECH INST,SENKEVICH JOHN J,LU TOH-MING
- Priority: US41851902 2002-10-15
- Main IPC: C23C16/18
- IPC: C23C16/18 ; C23C16/44 ; C23C16/455 ; C23C16/14 ; C23C16/448
Abstract:
The present invention relates to ALD processes for deposition of a metal selected from Pd, Rh, Ru, Pt and Ir wherein a layer including the metal is formed on a surface composed of a material selected from W, Ta, Cu, Ni, Co, Fe, Mn, Cr, V Nb, tungsten nitride, tantalum nitride, titanium nitride, dielectrics and activated dielectrics at a temperature ranging from >60°C to
Information query
IPC分类:
