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    SILOXANE EPOXY POLYMERS FOR LOW-κ DIELECTRIC APPLICATIONS
    5.
    发明申请
    SILOXANE EPOXY POLYMERS FOR LOW-κ DIELECTRIC APPLICATIONS 审中-公开
    用于低kappa电介质应用的硅氧烷环氧聚合物

    公开(公告)号：WO2005105894A2

    公开(公告)日：2005-11-10

    申请号：PCT/US2005/014085

    申请日：2005-04-25

    Applicant: POLYSET COMPANY, INC. ,  RENSSELAER POLYTECHNIC INSTITUTE ,  GHOSHAL, Ramkrishna ,  WANG, Pei-I ,  LU, Toh-Ming ,  MURARKA, Shyam P.

    Inventor： GHOSHAL, Ramkrishna ,  WANG, Pei-I ,  LU, Toh-Ming ,  MURARKA, Shyam P.

    IPC: C08G77/04

    CPC classification number: C09D183/06 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    Abstract: Semiconductor devices employing siloxane epoxy polymers as low-κ dielectric films are disclosed. The devices include a semiconductor substrate, one or more metal layers or structures and one or more dielectric films, wherein at least one dielectric film in the devices is a siloxane epoxy polymer. Use of siloxane epoxy polymers is advantageous, in part, because the polymers adhere well to metals and have dielectric constants as low as 1.8. Thus, the disclosed semiconductor devices offer much better performance than devices fabricated using conventional dielectric materials. Furthermore, the siloxane epoxy polymer dielectrics are fully curable at low temperatures, exhibit low leakage currents, and remain stable at temperatures greater than 400 °C making them particularly attractive for use in the semiconductor industry.

    Abstract translation: 公开了使用硅氧烷环氧聚合物作为低k电介质膜的半导体器件。 这些器件包括半导体衬底，一个或多个金属层或结构以及一个或多个介电膜，其中器件中的至少一个电介质膜是硅氧烷环氧聚合物。 硅氧烷环氧聚合物的使用部分是有利的，因为聚合物很好地粘附到金属上并具有低至1.8的介电常数。 因此，所公开的半导体器件比使用常规电介质材料制造的器件提供更好的性能。 此外，硅氧烷环氧聚合物电介质在低温下是完全可固化的，表现出低的漏电流，并且在大于400℃的温度下保持稳定，使得它们对于在半导体工业中的使用特别有吸引力。

    ATOMIC LAYER DEPOSITION OF NOBLE METALS
    6.
    发明申请
    ATOMIC LAYER DEPOSITION OF NOBLE METALS 审中-公开
    原子层沉积金属

    公开(公告)号：WO2004035858A2

    公开(公告)日：2004-04-29

    申请号：PCT/US2003/032644

    申请日：2003-10-15

    Applicant: RENSSELAER POLYTECHNIC INSTITUTE ,  SENKEVICH, John, J. ,  LU, Toh-Ming

    Inventor： SENKEVICH, John, J. ,  LU, Toh-Ming

    IPC: C23C16/00

    CPC classification number: C23C16/18 ,  B82Y30/00 ,  C23C16/0272 ,  C23C16/45553 ,  Y10T428/12285

    Abstract: The present invention relates to ALD processes for deposition of a metal selected from Pd, Rh, Ru, Pt and Ir wherein a layer including the metal is formed on a surface composed of a material selected from W, Ta, Cu, Ni, Co, Fe, Mn, Cr, V Nb, tungsten nitride, tantalum nitride, titanium nitride, dielectrics and activated dielectrics at a temperature ranging from >60°C to

    Abstract translation: 本发明涉及用于沉积选自Pd，Rh，Ru，Pt和Ir的金属的ALD工艺，其中在由选自W，Ta，Cu，Ni，Co， Fe，Mn，Cr，V Nb，氮化钨，氮化钽，氮化钛，电介质和活化的电介质，温度范围为> 60℃至<260℃。该层通过顺序地脉冲形成包含所述表面的室 金属的前体和选自氢，乙醛酸，草酸，甲醛，2-丙醇，咪唑和等离子体活化氢的还原气体。

    SILOXANE EPOXY POLYMERS FOR LOW-? DIELECTRIC APPLICATIONS
    9.
    发明申请
    SILOXANE EPOXY POLYMERS FOR LOW-? DIELECTRIC APPLICATIONS 审中-公开
    低密度聚乙烯硅氧烷聚合物 电介质应用

    公开(公告)号：WO2005105894A3

    公开(公告)日：2006-03-02

    申请号：PCT/US2005014085

    申请日：2005-04-25

    Applicant: POLYSET COMP INC ,  RENSSELAER POLYTECH INST ,  GHOSHAL RAMKRISHNA ,  WANG PEI-I ,  LU TOH-MING ,  MURARKA SHYAM P

    Inventor： GHOSHAL RAMKRISHNA ,  WANG PEI-I ,  LU TOH-MING ,  MURARKA SHYAM P

    IPC: C08G77/04 ,  C09D183/06 ,  H01L23/532 ,  H01L23/58 ,  C08G59/32 ,  C08G77/18

    CPC classification number: C09D183/06 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    Abstract: Semiconductor devices employing siloxane epoxy polymers as low-? dielectric films are disclosed. The devices include a semiconductor substrate, one or more metal layers or structures and one or more dielectric films, wherein at least one dielectric film in the devices is a siloxane epoxy polymer. Use of siloxane epoxy polymers is advantageous, in part, because the polymers adhere well to metals and have dielectric constants as low as 1.8. Thus, the disclosed semiconductor devices offer much better performance than devices fabricated using conventional dielectric materials. Furthermore, the siloxane epoxy polymer dielectrics are fully curable at low temperatures, exhibit low leakage currents, and remain stable at temperatures greater than 400 °C making them particularly attractive for use in the semiconductor industry.

    Abstract translation: 使用硅氧烷环氧聚合物的半导体器件 公开了介电膜。 这些器件包括半导体衬底，一个或多个金属层或结构以及一个或多个介电膜，其中器件中的至少一个电介质膜是硅氧烷环氧聚合物。 硅氧烷环氧聚合物的使用部分是有利的，因为聚合物很好地粘附到金属上并具有低至1.8的介电常数。 因此，所公开的半导体器件比使用常规电介质材料制造的器件提供更好的性能。 此外，硅氧烷环氧聚合物电介质在低温下是完全可固化的，表现出低的漏电流，并且在大于400℃的温度下保持稳定，使得它们对于在半导体工业中的使用特别有吸引力。

    SURFACE MODIFICATION OF CVD POLYMER FILMS
    10.
    发明申请
    SURFACE MODIFICATION OF CVD POLYMER FILMS 审中-公开

    公开(公告)号：WO2004016672A3

    公开(公告)日：2004-02-26

    申请号：PCT/US2003/025912

    申请日：2003-08-19

    Applicant: RENSSELAER POLYTECHNIC INSTITUTE ,  SENKEVICH, John, Joseph ,  YANG, Guangrong ,  LU, Toh-Ming

    Inventor： SENKEVICH, John, Joseph ,  YANG, Guangrong ,  LU, Toh-Ming

    IPC: C08G61/02

    Abstract: The present invention relates to a method for forming a conformal coating having a reactive surface. In the method, an ultrathin layer composed of a polymer having repeating units derived from unsubstituted p-xylylene, substituted p-xylylene, phenylene vinylene, phenylene ethynylene, 1,4-methylene naphthalene, 2,6-methylene naphthalene, 1,4-vinylene naphthalene, 2,6-vinylene naphthalene, 1,4-ethynylene naphthalene, 2,6-ethynylene naphthalene, combinations thereof, precursors therefor or combinations of precursors therefor, is deposited on a substrate by a thermal CVD process. The surface may be readily modified.

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