公开(公告)号：WO2023037452A1

公开(公告)日：2023-03-16

申请号：PCT/JP2021/033031

申请日：2021-09-08

Applicant: 株式会社ＫＯＫＵＳＡＩ　ＥＬＥＣＴＲＩＣ

Inventor： 栗林　幸永 ,  小川　有人

IPC: H01L21/28 ,  H01L21/285 ,  C23C16/02 ,  C23C16/14 ,  C23C16/455

Abstract: 金属系膜の膜特性を向上させることができる。　（ａ）基板に対して、第１５族元素を含むガスを供給し、基板の表面に第１５族元素を含む第１層を形成する工程と、（ｂ）基板に対して、Ｍｏ元素を含むガスを供給する工程と、（ｃ）基板に対して、還元ガスを供給する工程と、（ｄ）第１層の分解を抑制する雰囲気で、（ｂ）と（ｃ）とを所定回数行い、第１層の上に、Ｍｏ元素を含む膜を形成する工程と、を有する。

公开(公告)号：WO2022256410A1

公开(公告)日：2022-12-08

申请号：PCT/US2022/031774

申请日：2022-06-01

Applicant: APPLIED MATERIALS, INC.

Inventor： BHATNAGAR, Kunal ,  VERGHESE, Mohith

IPC: C23C16/455 ,  C23C16/02 ,  C23C16/04 ,  C23C16/14 ,  C23C16/40 ,  C23C16/32 ,  H01L21/285 ,  H01L21/02

Abstract: A deposition method demonstrating a slower growth rate is disclosed. Some embodiments of the disclosure provide CVD methods which utilize a halide-containing growth inhibitor as a co-reactant with a metal halide precursor and a reactant. Some embodiments of the disclosure relate to CVD and ALD methods comprising exposure of the substrate surface to a pretreatment comprising a halide-containing growth inhibitor.

公开(公告)号：WO2022240503A1

公开(公告)日：2022-11-17

申请号：PCT/US2022/024105

申请日：2022-04-08

Applicant: APPLIED MATERIALS, INC.

Inventor： CEN, Xi ,  ZHAO, Mingrui ,  WANG, Peiqi ,  CHAN, Wei Min ,  WU, Kai ,  LUO, Yi ,  WU, Liqi

IPC: H01L21/285 ,  H01L21/768 ,  C23C16/02 ,  C23C16/04 ,  C23C16/06 ,  C23C16/52 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/14 ,  C23C16/34 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45557 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53266

Abstract: Embodiments herein are generally directed to methods of forming high aspect ratio metal contacts and/or interconnect features, e.g., tungsten features, in a semiconductor device. Often, conformal deposition of tungsten in a high aspect ratio opening results in a seam and/or void where the outward growth of tungsten from one or more walls of the opening meet. Thus, the methods set forth herein provide for a desirable bottom up tungsten bulk fill to avoid the formation of seams and/or voids in the resulting interconnect features, and provide an improved contact metal structure and method of forming the same. In some embodiments, an improved overburden layer or overburden layer structure is formed over the field region of the substrate to enable the formation of a contact or interconnect structure that has improved characteristics over conventionally formed contacts or interconnect structures.

公开(公告)号：WO2022072307A1

公开(公告)日：2022-04-07

申请号：PCT/US2021/052297

申请日：2021-09-28

Applicant: APPLIED MATERIALS, INC.

Inventor： WU, Kedi ,  SHEN, Chenfei ,  LIN, Chi-Chou ,  FISHER, Ilanit ,  CHEN, Shih Chung ,  SRIRAM, Mandyam ,  GANDIKOTA, Srinivas

IPC: H01L21/285 ,  H01L21/768 ,  C23C16/02 ,  C23C16/04 ,  C23C16/14 ,  C23C16/455

Abstract: Methods of forming electronic devices comprising tungsten film stacks are provided. Methods include forming a tungsten nucleation layer on the barrier layer using an atomic layer deposition (ALD) process including a tungsten precursor that is free of fluorine. Forming the nucleation layer comprises controlling process parameters and/or forming WSi pre-nucleation layer.

公开(公告)号：WO2021178593A1

公开(公告)日：2021-09-10

申请号：PCT/US2021/020748

申请日：2021-03-03

Applicant: LAM RESEARCH CORPORATION

Inventor： BIRRU, Krishna ,  KHO, Leonard Wai Fung ,  CHANDRASHEKAR, Anand ,  BOWES, Michael ,  SUN, Yong ,  ZHANG, Xing ,  SINGH, Sumit Subhash

IPC: C23C16/455 ,  C23C16/04 ,  C23C16/14 ,  C23C16/54 ,  H01L21/285

Abstract: Providing herein are methods of delivery of gas reactants to a processing chamber and related apparatus.

公开(公告)号：WO2018013778A1

公开(公告)日：2018-01-18

申请号：PCT/US2017/041883

申请日：2017-07-13

Applicant: ENTEGRIS, INC.

Inventor： BAUM, Thomas H. ,  CHEN, Philip S.H. ,  WRIGHT, Robert ,  HENDRIX, Bryan ,  MENG, Shuang ,  ASSION, Richard

IPC: C23C16/04 ,  C23C16/14 ,  C23C16/455 ,  C23C16/02

Abstract: A method of forming a molybdenum-containing material on a substrate is described, in which the substrate is contacted with molybdenum oxytetrachloride (MoOCl4) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate. In various implementations, a diborane contact of the substrate may be employed to establish favorable nucleation conditions for the subsequent bulk deposition of molybdenum, e.g., by chemical vapor deposition (CVD) techniques such as pulsed CVD.

Abstract translation: 描述了在基材上形成含钼材料的方法，其中在蒸汽沉积条件下使基材与四氯化四氧化钼（MoOCl 4）蒸气接触，以将含钼材料沉积在 基质。 在各种实施方式中，可以采用衬底的乙硼烷接触来建立用于钼的后续本体沉积的有利的成核条件，例如通过诸如脉冲CVD的化学气相沉积（CVD）技术。

公开(公告)号：WO2017116667A1

公开(公告)日：2017-07-06

申请号：PCT/US2016/066126

申请日：2016-12-12

Applicant: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE ,  NIKIFOROV, Grigory ,  GATINEAU, Satoko

Inventor： NIKIFOROV, Grigory ,  GATINEAU, Satoko

IPC: C23C16/14

CPC classification number: C23C16/30 ,  C23C16/18

Abstract: Iron-containing film forming compositions, their preparation, and their use for the vapor deposition of films are disclosed. The Iron-containing film forming compositions comprise silylamide-containing precursors, particularly {Fe[N(SiMe 3 ) 2 ] 2 } 2 .

Abstract translation: 公开了含铁膜形成组合物，其制备及其用于膜的气相沉积的用途。 含铁的成膜组合物包含含有甲硅烷基酰胺的前体，特别是{Fe [N（SiMe 3）2] 1/2 sub ₂

公开(公告)号：WO2017116665A1

公开(公告)日：2017-07-06

申请号：PCT/US2016/066120

申请日：2016-12-12

Applicant: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE ,  WIESE, Stefan ,  GATINEAU, Satoko ,  DUSSARRAT, Christian ,  GIRARD, Jean-Marc ,  BLASCO, Nicolas

Inventor： WIESE, Stefan ,  GATINEAU, Satoko ,  DUSSARRAT, Christian ,  GIRARD, Jean-Marc ,  BLASCO, Nicolas

IPC: C23C16/14

CPC classification number: C23C16/42 ,  C23C16/18 ,  C23C16/30 ,  C23C16/36

Abstract: Manganese-containing film forming compositions, their preparation, and their use for the vapor deposition of films are disclosed. The manganese-containing film forming compositions comprise silylamide-containing precursors, particularly {Mn[N(SiMe 2 Et) 2 ] 2 } 2 .

Abstract translation: 公开了含锰的成膜组合物，它们的制备以及它们用于气相沉积膜的用途。 含锰的成膜组合物包含含有甲硅烷基酰胺的前体，特别是{Mn [N（SiMe 2 Et）] 2] 2 sub ₂

公开(公告)号：WO2005003404A2

公开(公告)日：2005-01-13

申请号：PCT/US2004020710

申请日：2004-06-25

Applicant: GEN ELECTRIC ,  SANE AJIT ,  LENNARTZ JEFFREY ,  LEIST JON ,  KOTABISH DANIEL ,  MARINER JOHN ,  MACEY ANDREW ,  LONGWORTH DOUGLAS ,  HEJL TIMOTHY ,  DEVAN THOMAS

Inventor： SANE AJIT ,  LENNARTZ JEFFREY ,  LEIST JON ,  KOTABISH DANIEL ,  MARINER JOHN ,  MACEY ANDREW ,  LONGWORTH DOUGLAS ,  HEJL TIMOTHY ,  DEVAN THOMAS

IPC: B05D7/22 ,  B32B9/00 ,  C23C16/14 ,  C23C16/36 ,  C23C16/458 ,  C23C16/56 ,  H01L21/00

CPC classification number: C23C16/36 ,  C23C16/4581 ,  Y10T428/24917 ,  Y10T428/30

Abstract: A composite coating for use on semi-conductor processing components, comprising a refractory metal carbide coating with its surface modified by at least one of: a) a carbon donor source for a stabilized stoichiometry, and b) a layer of nitride, carbonitride or oxynitride of elements selected from a group B, Al, Si, refractory metals, transition metals, rare earth metals which may or may not contain electrically conducting pattern, and wherein the metal carbide is selected from the group consisting of silicon carbide, tantalum carbide, titanium carbide, tungsten carbide, silicon oxycarbide, zirconium carbide, hafnium carbide, lanthanum carbide, vanadium carbide, niobium carbide, magnesium carbide, chromium carbide, molybdenum carbide, beryllium carbide and mixtures thereof. The composite coating is characterized as having an improved corrosion resistance property and little emissivity sensitivity to wavelengths used in optical pyrometry under the normal semi-conductor processing environments.

Abstract translation: 一种用于半导体加工部件的复合涂层，包括难熔金属碳化物涂层，其表面由以下至少一种修饰：a）用于稳定化学计量的碳供体源，以及b）氮化物，碳氮化物或氮氧化物层 选自B，Al，Si，难熔金属，过渡金属，可能含有导电图案或不含导电图案的稀土金属，其中金属碳化物选自碳化硅，碳化钽，钛 碳化钨，碳化钨，碳氧化硅，碳化锆，碳化铪，碳化镧，碳化钒，碳化铌，碳化镁，碳化铬，碳化钼，碳化铍及其混合物。 该复合涂层的特征在于具有改善的耐腐蚀性能，并且在通常的半导体加工环境下在光学高温测量中使用的波长的发射率灵敏度小。

公开(公告)号：WO03031679B1

公开(公告)日：2004-05-13

申请号：PCT/US0232348

申请日：2002-10-10

Applicant: APPLIED MATERIALS INC

Inventor： FANG HONGBIN ,  YOON HYUNG SUK A ,  LAI KEN KAUNG ,  YOUNG C C ,  HORNG JAMES ,  XI MING ,  YANG MICHAEL X ,  CHUNG HUA

IPC: C23C16/14 ,  C23C16/02 ,  C23C16/06 ,  C23C16/16 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/78 ,  H01L21/00

CPC classification number: C23C16/06 ,  C23C16/02 ,  C23C16/0218 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/08 ,  C23C16/16 ,  C23C16/45525

Abstract: A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber (110) and exposing the substrate surface to a boride (120). A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound (130) and a reducing gas (150) selected from a group consisting of silane (SiH4), disilane (Si2H6), dichlorosilane (SiCl2H2), derivatives thereof, and combinations thereof. A tungsten bulk fill may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.

Abstract translation: 提供了在基板表面上形成钨层的方法。 在一个方面，该方法包括将衬底表面定位在处理室（110）中并将衬底表面暴露于硼化物（120）。 然后通过交替地脉冲选择硅烷（SiH 4），乙硅烷（Si 2 H 6），二氯硅烷（Si 2 H 6），二氯硅烷 （SiCl 2 H 2），其衍生物及其组合。 然后可以使用循环沉积，化学气相沉积或物理气相沉积技术将钨体填充物沉积在成核层上。