Invention Application
- Patent Title: TECHNIQUES FOR DEPOSITING METALLIC FILMS USING ION IMPLANTATION SURFACE MODIFICATION FOR CATALYSIS OF ELECTROLESS DEPOSITION
- Patent Title (中): 使用离子植入表面改性沉积金属膜的技术用于电解沉积的催化
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Application No.: PCT/US2007003315Application Date: 2007-02-07
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Publication No.: WO2007092529A8Publication Date: 2008-09-25
- Inventor: NUNAN PETER D , EROKHIN YURI
- Applicant: VARIAN SEMICONDUCTOR EQUIPMENT , NUNAN PETER D , EROKHIN YURI
- Assignee: VARIAN SEMICONDUCTOR EQUIPMENT,NUNAN PETER D,EROKHIN YURI
- Current Assignee: VARIAN SEMICONDUCTOR EQUIPMENT,NUNAN PETER D,EROKHIN YURI
- Priority: US77159106 2006-02-08
- Main IPC: C23C18/28
- IPC: C23C18/28 ; C23C14/04 ; C23C14/48 ; C23C18/30 ; H01L29/00
Abstract:
Techniques for deposition metallic films (150) using ion implantation surface modification for catalysis of electroless deposition are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for depositing a metallic film (150). The method may comprise depositing a catalyzing material on a structure (100), wherein the structure (100) comprises a substrate (1 10), a dielectric layer (120) on the substrate ( 1 10), and a resist layer (130) on the dielectric layer (120), wherein the dielectric layer (120) and the resist layer (130 have one or more openings (140). The method may also comprise stripping the resist layer (130). The method may further comprise depositing a metallic film (150) on the catalyzing material in the one or more openings (140) of the structure (100) to fill the one or more openings (140).
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