Invention Application
WO2008038863A1 NOVEL ORGANOSILANE POLYMER, HARDMASK COMPOSITION FOR RESIST UNDERLAYER FILM COMPRISING THE ORGANOSILANE POLYMER, AND PROCESS OF PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE HARDMASK COMPOSITION
审中-公开
新型有机硅聚合物，用于包含有机硅聚合物的耐下胶膜的HARDMASK组合物，以及使用HARDMASK组合物生产半导体集成电路装置的方法
- Patent Title: NOVEL ORGANOSILANE POLYMER, HARDMASK COMPOSITION FOR RESIST UNDERLAYER FILM COMPRISING THE ORGANOSILANE POLYMER, AND PROCESS OF PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE HARDMASK COMPOSITION
- Patent Title (中): 新型有机硅聚合物，用于包含有机硅聚合物的耐下胶膜的HARDMASK组合物，以及使用HARDMASK组合物生产半导体集成电路装置的方法
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Application No.: PCT/KR2006/005915Application Date: 2006-12-31
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Publication No.: WO2008038863A1Publication Date: 2008-04-03
- Inventor: YOON, Hui Chan , KIM, Sang Kyun , LIM, Sang Hak , UH, Dong Sun , KIM, Jong Seob , OH, Chang Il
- Applicant: CHEIL INDUSTRIES INC. , YOON, Hui Chan , KIM, Sang Kyun , LIM, Sang Hak , UH, Dong Sun , KIM, Jong Seob , OH, Chang Il
- Applicant Address: 290, Gongdan 2-dong Gumi-si Gyeongsangbuk-do 730-710 KR
- Assignee: CHEIL INDUSTRIES INC.,YOON, Hui Chan,KIM, Sang Kyun,LIM, Sang Hak,UH, Dong Sun,KIM, Jong Seob,OH, Chang Il
- Current Assignee: CHEIL INDUSTRIES INC.,YOON, Hui Chan,KIM, Sang Kyun,LIM, Sang Hak,UH, Dong Sun,KIM, Jong Seob,OH, Chang Il
- Current Assignee Address: 290, Gongdan 2-dong Gumi-si Gyeongsangbuk-do 730-710 KR
- Agency: PARK, Yong Soon
- Priority: KR10-2006-0094967 20060928
- Main IPC: G03F7/004
- IPC: G03F7/004
Abstract:
A hardmask composition for processing a resist underlayer film is provided. The hardmask composition comprises: (a) an organosilane polymer prepared by reacting polycondensation products of hydrolysates of compounds represented by Formulae 1, 2 and 3: [RO] 3 Si-Ar (1) (wherein R is methyl or ethyl and Ar is an aromatic ring-containing functional group), [RO] 3 Si-H (2) (wherein R is methyl or ethyl), and [RO] 3 Si-R' (3) (wherein R is methyl or ethyl and R'is substituted or unsubstituted cyclic or acyclic alkyl) with ethyl vinyl ether of Formula 4: CH 2 CHOCH 2 CH 3 (4) in the presence of an acid catalyst; (b) a solvent; and (c) a crosslinking catalyst.
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