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    HARDMASK COMPOSITION FOR PROCESSING RESIST UNDERLAYER FILM, PROCESS FOR PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE HARDMASK COMPOSITION, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE PRODUCED BY THE PROCESS
    2.
    发明申请
    HARDMASK COMPOSITION FOR PROCESSING RESIST UNDERLAYER FILM, PROCESS FOR PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE HARDMASK COMPOSITION, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE PRODUCED BY THE PROCESS 审中-公开
    用于加工电阻膜的HARDMASK组合物，使用HARDMASK组合物生产半导​​体集成电路器件的方法以及由该工艺生产的半导体集成电路器件

    公开(公告)号：WO2008063016A1

    公开(公告)日：2008-05-29

    申请号：PCT/KR2007/005894

    申请日：2007-11-21

    Applicant: CHEIL INDUSTRIES INC. ,  KIM, Mi Young ,  KIM, Sang Kyun ,  LIM, Sang Hak ,  KOH, Sang Ran ,  YUN, Hui Chan ,  KIM, Do Hyeon ,  UH, Dong Seon ,  KIM, Jong Seob

    Inventor： KIM, Mi Young ,  KIM, Sang Kyun ,  LIM, Sang Hak ,  KOH, Sang Ran ,  YUN, Hui Chan ,  KIM, Do Hyeon ,  UH, Dong Seon ,  KIM, Jong Seob

    IPC: G03F7/004

    CPC classification number: C08G77/50 ,  C08L83/14 ,  G03F7/11 ,  G03F7/2022 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/0271 ,  H01L21/31144 ,  H01L21/3122

    Abstract: A hardmask composition for processing a resist underlayer film is provided. The hardmask composition comprises an organosilane polymer and a solvent or a mixture of solvents wherein the organosilane polymer is prepared in the presence of an acid catalyst by polycondensation of hjdroly sates of compounds represented by Formulae 1, 2 and 3: ([R)1O]3S-X (1) wherein X is a C6-C30 functional group containing at least one substituted or unsubstituted aromatic ring and R1 is a C1-C6 alkyl group; [R2O]3S-R 3 (2) wherein R2 is a C1-C6 alkyl group and R3 is a C1-C12 alkyl group; and [R4O]3S-Y-S[OR 5]3 (3) wherein R4 and R5 are each independently a C1-C6 alkyl group, and Y is a linking group selected from the group consisting of aromatic rings, substituted or unsubstituted, linear or branched C1-C20 alkylene groups, C1-C20 alkylene groups containing an aromatic ring, a heterocyclic ring, an urea group or an isocyanurate group in the backbone and C2-C20 hydrocarbon groups containing at least one multiple bond. The hardmask composition exhibits excellent film characteristics and good storage stability and allows transferring a good pattern to a material layer due to its satisfactory hardmask characteristics. In addition, the hardmask composition has improved etch resistance against O 2 plasma gas upon subsequent etching for patterning. The hardmask composition can be used to form a highly hjdrophilic thin film, thus being effective in improving the interfacial compatibility of the thin film with an overlying antireflective coating. Further provided is a process for producing a semiconductor integrated circuit device using the hardmask composition.

    Abstract translation: 提供了用于加工抗蚀剂下层膜的硬掩模组合物。 所述硬掩模组合物包含有机硅烷聚合物和溶剂或溶剂混合物，其中有机硅烷聚合物是在酸催化剂存在下通过由式1,2和3表示的化合物的共聚物缩聚制备的：（[R] 10] 3S-X（1）其中X是含有至少一个取代或未取代的芳环的C 6 -C 30官能团，R 1是C 1 -C 6烷基; [R2O] 3S-R 3（2）其中R2是C1-C6烷基，R3是C1-C12烷基; 和[R 40] 3S-YS [OR 5] 3（3）其中R 4和R 5各自独立地为C 1 -C 6烷基，Y为选自以下的连接基团：芳环，取代或未取代的直链或 支链C1-C20亚烷基，含有芳香环，杂环，脲基或异氰脲酸酯基的C1-C20亚烷基和含有至少一个多重键的C 2 -C 20烃基。 硬掩模组合物表现出优异的膜特性和良好的储存稳定性，并且由于其令人满意的硬掩模特性，可以将良好的图案转印到材料层。 此外，随后的图案化蚀刻，硬掩模组合物具有改善的对O 2等离子体气体的耐蚀刻性。 硬掩模组合物可以用于形成高亲水性薄膜，因此有效地改善薄膜与上覆抗反射涂层的界面相容性。 还提供了使用硬掩模组合物制造半导体集成电路器件的方法。

    HARDMASK COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS OF PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE SAME
    5.
    发明申请
    HARDMASK COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS OF PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE SAME 审中-公开
    用于电阻膜的HARDMASK组合物和使用其制造半导体集成电路装置的方法

    公开(公告)号：WO2008018664A1

    公开(公告)日：2008-02-14

    申请号：PCT/KR2006/005916

    申请日：2006-12-31

    Applicant: CHEIL INDUSTRIES INC. ,  YOON, Hui Chan ,  KIM, Sang Kyun ,  LIM, Sang Hak ,  KIM, Mi Young ,  KOH, Sang Ran ,  UH, Dong Sun ,  KIM, Jong Seob ,  KIM, Do Hyun

    Inventor： YOON, Hui Chan ,  KIM, Sang Kyun ,  LIM, Sang Hak ,  KIM, Mi Young ,  KOH, Sang Ran ,  UH, Dong Sun ,  KIM, Jong Seob ,  KIM, Do Hyun

    IPC: H01L21/027

    CPC classification number: H01L21/31144 ,  C08G77/04 ,  C09D183/04 ,  H01L21/0276

    Abstract: Disclosed is a hardmask composition for processing a resist underlayer film. The hardmask composition comprises: (a) an organosilane polymer having alkoxy groups prepared from a compound represented by [RO] 3 Si-R' (1) (wherein R is methyl or ethyl and R' is substituted or unsubstituted cyclic or acyclic alkyl), or an organosilane polymer having alkoxy groups prepared from the compound of Formula 1 and a compound represented by [RO] 3 Si-Ar (2) (wherein R is methyl or ethyl and Ar is an aromatic ring-containing functional group); and (b) a solvent. The hardmask composition has excellent film characteristics. In addition, the hardmask composition exhibits excellent hardmask characteristics, thus allowing a good pattern to be effectively transferred to a material layer. Particularly, the hardmask composition is highly stable during storage. Further disclosed is a method for producing a semiconductor integrated circuit device using the hardmask composition.

    Abstract translation: 公开了用于加工抗蚀剂下层膜的硬掩模组合物。 硬掩模组合物包括：（a）由由[RO] 3 Si-R'（1）表示的化合物制备的具有烷氧基的有机硅烷聚合物（其中R是甲基或乙基，R'被取代 或未取代的环状或非环状烷基）或具有由式1化合物制备的烷氧基的有机硅烷聚合物和由[RO] 3 Si-Ar（2）表示的化合物（其中R是甲基或 乙基和Ar是含芳环的官能团）; 和（b）溶剂。 硬掩模组合物具有优异的膜特性。 此外，硬掩模组合物表现出优异的硬掩模特性，因此允许将良好的图案有效地转移到材料层。 特别地，硬掩模组合物在储存期间高度稳定。 另外公开了使用该硬掩模组合物制造半导体集成电路器件的方法。

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