公开(公告)号：WO2008038863A1

公开(公告)日：2008-04-03

申请号：PCT/KR2006/005915

申请日：2006-12-31

Applicant: CHEIL INDUSTRIES INC. ,  YOON, Hui Chan ,  KIM, Sang Kyun ,  LIM, Sang Hak ,  UH, Dong Sun ,  KIM, Jong Seob ,  OH, Chang Il

Inventor： YOON, Hui Chan ,  KIM, Sang Kyun ,  LIM, Sang Hak ,  UH, Dong Sun ,  KIM, Jong Seob ,  OH, Chang Il

IPC: G03F7/004

CPC classification number: G03F7/11 ,  C08G77/04 ,  G03F7/0752 ,  G03F7/091

Abstract: A hardmask composition for processing a resist underlayer film is provided. The hardmask composition comprises: (a) an organosilane polymer prepared by reacting polycondensation products of hydrolysates of compounds represented by Formulae 1, 2 and 3: [RO] 3 Si-Ar (1) (wherein R is methyl or ethyl and Ar is an aromatic ring-containing functional group), [RO] 3 Si-H (2) (wherein R is methyl or ethyl), and [RO] 3 Si-R' (3) (wherein R is methyl or ethyl and R'is substituted or unsubstituted cyclic or acyclic alkyl) with ethyl vinyl ether of Formula 4: CH 2 CHOCH 2 CH 3 (4) in the presence of an acid catalyst; (b) a solvent; and (c) a crosslinking catalyst.

Abstract translation: 提供了用于加工抗蚀剂下层膜的硬掩模组合物。 硬掩模组合物包括：（a）通过使由式1,2和3表示的化合物的水解产物的缩聚产物：[RO 3] Si-Ar（1）（其中R是 甲基或乙基，Ar是含芳环的官能团），[RO 3] Si-H（2）（其中R是甲基或乙基）和[RO 3] （3）（其中R是甲基或乙基，R 1是取代或未取代的环状或非环状烷基）与式4的乙基乙烯基醚：CH 2 CH 2 2（3）在酸催化剂存在下， （b）溶剂; 和（c）交联催化剂。

公开(公告)号：WO2008004735A1

公开(公告)日：2008-01-10

申请号：PCT/KR2006/005917

申请日：2006-12-31

Applicant: CHEIL INDUSTRIES INC. ,  UH, Dong Sun ,  YOO, Yong Sik ,  KIM, Hee Jae ,  WOO, Chang Soo ,  YUN, Sang Geun

Inventor： UH, Dong Sun ,  YOO, Yong Sik ,  KIM, Hee Jae ,  WOO, Chang Soo ,  YUN, Sang Geun

IPC: C08L21/00

CPC classification number: C09D139/08 ,  C09D133/066 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/0338

Abstract: Disclosed is a micropattern-forming resin composition that can be used to reduce the area or width of recessed portions in a semiconductor lithographic process. The resin composition is coated on a photoresist pattern layer and comprises an aqueous alcoholic or alkaline solution and a water-soluble polymer. The resin composition can be used reduce the width of recessed portions of the photoresist pattern layer. Therefore, the use of the resin composition enables the formation of a micropattern that overcomes the limitation of wavelength.

Abstract translation: 公开了一种微图案形成树脂组合物，其可用于在半导体平版印刷工艺中减小凹部的面积或宽度。 树脂组合物涂覆在光致抗蚀剂图案层上并且包含含水醇或碱性溶液和水溶性聚合物。 可以使用树脂组合物来降低光致抗蚀剂图案层的凹部的宽度。 因此，使用树脂组合物能够形成克服波长限制的微图案。

公开(公告)号：WO2007139268A1

公开(公告)日：2007-12-06

申请号：PCT/KR2006/005906

申请日：2006-12-29

Applicant: CHEIL INDUSTRIES INC. ,  YOON, Hui Chan ,  KIM, Sang Kyun ,  LIM, Sang Hak ,  UH, Dong Sun ,  KIM, Jong Seob ,  LEE, Jin Kuk ,  OH, Chang Il ,  KIM, Min Soo ,  HYUNG, Kyung Hee ,  NAM, Irina

Inventor： YOON, Hui Chan ,  KIM, Sang Kyun ,  LIM, Sang Hak ,  UH, Dong Sun ,  KIM, Jong Seob ,  LEE, Jin Kuk ,  OH, Chang Il ,  KIM, Min Soo ,  HYUNG, Kyung Hee ,  NAM, Irina

IPC: G03F7/004

CPC classification number: G03F7/091

Abstract: Disclosed is a hardmask composition having antireflective properties useful for a lithographic process. The hardmask composition provides excellent optical properties, superior mechanical properties and high etch selectivity. In addition, the hardmask composition can be easily applied by a spin-on coating technique. Advantageously, the hardmask composition is suitable for a short- wavelength lithographic process and has a minimum residual acid content.

Abstract translation: 公开了具有抗平滑印刷工艺有用的抗反射性能的硬掩模组合物。 硬掩模组合物提供优异的光学性能，优异的机械性能和高蚀刻选择性。 此外，硬掩模组合物可以通过旋涂技术容易地应用。 有利地，硬掩模组合物适用于短波长光刻工艺，并具有最小的残留酸含量。

公开(公告)号：WO2006135136A1

公开(公告)日：2006-12-21

申请号：PCT/KR2005/003945

申请日：2005-11-22

Applicant: CHEIL INDUSTRIES INC. ,  UH, Dong Sun ,  JUNG, Ji Young ,  OH, Jae Min ,  OH, Chang Il ,  KIM, Do Hyeon

Inventor： UH, Dong Sun ,  JUNG, Ji Young ,  OH, Jae Min ,  OH, Chang Il ,  KIM, Do Hyeon

IPC: G03F7/11

CPC classification number: G03F7/091 ,  G03F7/0387 ,  Y10S430/115

Abstract: Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. Antireflective hardmask compositions of the invention include: (a) a polymer mixture including a first polymer that includes one or more of the following monomeric units described in this specification and a second polymer including an aryl group; (b) a crosslinking component; and (c) an acid catalyst.

Abstract translation: 提供了具有抗平滑印刷工艺中有用的抗反射性能的硬掩模组合物，其使用方法以及通过这些方法制造的半导体器件。 本发明的抗反射硬掩模组​​合物包括：（a）包含第一聚合物的聚合物混合物，其包含本说明书中描述的一种或多种下列单体单元和包含芳基的第二聚合物; （b）交联组分; 和（c）酸催化剂。

公开(公告)号：WO2008018664A1

公开(公告)日：2008-02-14

申请号：PCT/KR2006/005916

申请日：2006-12-31

Applicant: CHEIL INDUSTRIES INC. ,  YOON, Hui Chan ,  KIM, Sang Kyun ,  LIM, Sang Hak ,  KIM, Mi Young ,  KOH, Sang Ran ,  UH, Dong Sun ,  KIM, Jong Seob ,  KIM, Do Hyun

Inventor： YOON, Hui Chan ,  KIM, Sang Kyun ,  LIM, Sang Hak ,  KIM, Mi Young ,  KOH, Sang Ran ,  UH, Dong Sun ,  KIM, Jong Seob ,  KIM, Do Hyun

IPC: H01L21/027

CPC classification number: H01L21/31144 ,  C08G77/04 ,  C09D183/04 ,  H01L21/0276

Abstract: Disclosed is a hardmask composition for processing a resist underlayer film. The hardmask composition comprises: (a) an organosilane polymer having alkoxy groups prepared from a compound represented by [RO] 3 Si-R' (1) (wherein R is methyl or ethyl and R' is substituted or unsubstituted cyclic or acyclic alkyl), or an organosilane polymer having alkoxy groups prepared from the compound of Formula 1 and a compound represented by [RO] 3 Si-Ar (2) (wherein R is methyl or ethyl and Ar is an aromatic ring-containing functional group); and (b) a solvent. The hardmask composition has excellent film characteristics. In addition, the hardmask composition exhibits excellent hardmask characteristics, thus allowing a good pattern to be effectively transferred to a material layer. Particularly, the hardmask composition is highly stable during storage. Further disclosed is a method for producing a semiconductor integrated circuit device using the hardmask composition.

Abstract translation: 公开了用于加工抗蚀剂下层膜的硬掩模组合物。 硬掩模组合物包括：（a）由由[RO] 3 Si-R'（1）表示的化合物制备的具有烷氧基的有机硅烷聚合物（其中R是甲基或乙基，R'被取代 或未取代的环状或非环状烷基）或具有由式1化合物制备的烷氧基的有机硅烷聚合物和由[RO] 3 Si-Ar（2）表示的化合物（其中R是甲基或 乙基和Ar是含芳环的官能团）; 和（b）溶剂。 硬掩模组合物具有优异的膜特性。 此外，硬掩模组合物表现出优异的硬掩模特性，因此允许将良好的图案有效地转移到材料层。 特别地，硬掩模组合物在储存期间高度稳定。 另外公开了使用该硬掩模组合物制造半导体集成电路器件的方法。

公开(公告)号：WO2007105859A1

公开(公告)日：2007-09-20

申请号：PCT/KR2007/000003

申请日：2007-01-15

Applicant: CHEIL INDUSTRIES INC. ,  YOON, Hui Chan ,  KIM, Sang Kyun ,  LIM, Sang Hak ,  UH, Dong Sun ,  KIM, Jong Seob ,  LEE, Jin Kuk ,  OH, Chang Il ,  KIM, Min Soo ,  YOON, Kyong Ho ,  NAM, Irina

Inventor： YOON, Hui Chan ,  KIM, Sang Kyun ,  LIM, Sang Hak ,  UH, Dong Sun ,  KIM, Jong Seob ,  LEE, Jin Kuk ,  OH, Chang Il ,  KIM, Min Soo ,  YOON, Kyong Ho ,  NAM, Irina

IPC: C08G77/00 ,  C08G77/02 ,  C08G77/08 ,  C08G77/06

CPC classification number: H01L21/31144 ,  C08G77/20 ,  G03F7/0752 ,  G03F7/091 ,  H01L21/3121

Abstract: Provided herein, according to some embodiments of the invention, are organosilane polymers prepared by reacting organosilane compounds including (a) at least one compound of Formula (I) Si(OR 1 )(OR 2 )(OR 3 )R 4 wherein R 1 , R 2 and R 3 may each independently be an alkyl group, and R 4 may be -(CH 2 ) n R 5 , wherein R 5 may be an aryl or a substituted aryl, and n may be O or a positive integer; and (b) at least one compound of Formula (II) Si(OR 6 )(OR 7 )(OR 8 )R 9 wherein R 6 , R 7 and R 8 may each independently an alkyl group or an aryl group; and R 9 may be an alkyl group. Also provided are hardmask compositions including an organosilane compound according to an embodiment of the invention, or a hydrolysis product thereof. Methods of producing semiconductor devices using a hardmask compostion according to an embodiment of the invention, and semiconductor devices produced therefrom, are also provided.

Abstract translation: 根据本发明的一些实施方案，提供了通过使有机硅烷化合物反应制备的有机硅烷聚合物，所述有机硅烷化合物包括（a）至少一种式（I）Si（OR 1）2（OR 2） （OR 3）R 4其中R 1，R 2和R 2， R 3可以各自独立地为烷基，R 4可以是 - （CH 2）n R 5 其中R 5可以是芳基或取代的芳基，n可以是O或正整数; 和（b）至少一种式（II）的化合物Si（OR 6）（OR 7）（OR 8）（OR 8） 其中R 6，R 7和R 8可各自独立地为烷基或芳基; R 9可以是烷基。 还提供了包含根据本发明实施方案的有机硅烷化合物或其水解产物的硬掩模组合物。 还提供了使用根据本发明的实施例的硬掩模组合的半导体器件的制造方法以及由其制造的半导体器件。