Invention Application
- Patent Title: RELAXATION AND TRANSFER OF STRAINED MATERIAL LAYERS
- Patent Title (中): 应变材料层的松弛和转移
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Application No.: PCT/EP2010000090Application Date: 2010-01-11
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Publication No.: WO2010094371A3Publication Date: 2011-11-24
- Inventor: LETERTRE FABRICE , FAURE BRUCE , GUENARD PASCAL
- Applicant: SOITEC SILICON ON INSULATOR , LETERTRE FABRICE , FAURE BRUCE , GUENARD PASCAL
- Assignee: SOITEC SILICON ON INSULATOR,LETERTRE FABRICE,FAURE BRUCE,GUENARD PASCAL
- Current Assignee: SOITEC SILICON ON INSULATOR,LETERTRE FABRICE,FAURE BRUCE,GUENARD PASCAL
- Priority: EP09290100 2009-02-19
- Main IPC: H01L21/20
- IPC: H01L21/20 ; C30B29/38 ; C30B29/40 ; C30B33/02 ; C30B33/06 ; H01L21/02 ; H01L21/762
Abstract:
The present invention relates a method for the formation of an at least partially relaxed strained material layer, the method comprising the steps of providing a seed substrate; patterning the seed substrate; growing a strained material layer on the patterned seed substrate; transferring the strained material layer from the patterned seed substrate to an intermediate substrate; and at least partially relaxing the strained material layer by a heat treatment.
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