Invention Application
WO2012003301A3 ULTRAHIGH DENSITY VERTICAL NAND MEMORY DEVICE AND METHOD OF MAKING THEREOF
审中-公开
超高密度垂直NAND存储器件及其制造方法
- Patent Title: ULTRAHIGH DENSITY VERTICAL NAND MEMORY DEVICE AND METHOD OF MAKING THEREOF
- Patent Title (中): 超高密度垂直NAND存储器件及其制造方法
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Application No.: PCT/US2011042566Application Date: 2011-06-30
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Publication No.: WO2012003301A3Publication Date: 2012-04-19
- Inventor: ALSMEIER JOHANN , PURAYATH VINOD , CHIEN HENRY , MATAMIS GEORGE , LEE YAO-SHENG , KAI JAMES , ZHANG YUAN , SAMACHISA GEORGE
- Applicant: SANDISK TECHNOLOGIES INC , ALSMEIER JOHANN , PURAYATH VINOD , CHIEN HENRY , MATAMIS GEORGE , LEE YAO-SHENG , KAI JAMES , ZHANG YUAN , SAMACHISA GEORGE
- Assignee: SANDISK TECHNOLOGIES INC,ALSMEIER JOHANN,PURAYATH VINOD,CHIEN HENRY,MATAMIS GEORGE,LEE YAO-SHENG,KAI JAMES,ZHANG YUAN,SAMACHISA GEORGE
- Current Assignee: SANDISK TECHNOLOGIES INC,ALSMEIER JOHANN,PURAYATH VINOD,CHIEN HENRY,MATAMIS GEORGE,LEE YAO-SHENG,KAI JAMES,ZHANG YUAN,SAMACHISA GEORGE
- Priority: US82786910 2010-06-30; US82757710 2010-06-30; US82794710 2010-06-30; US82776110 2010-06-30
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8247 ; H01L27/115 ; H01L29/788 ; H01L29/792
Abstract:
Monolithic, three dimensional NAND strings and manufacturing methods are disclosed. The channel (1) of the strings can be vertical or V-shaped. The core the channel can be filled with an insulator. The control gates ( 3 ) are recessed with respect to intermediate dielectric layers. The charge storage regions ( 9 ) and the blocking dielectric (7) are formed in the recesses. Shielding wings (12) can be formed next to the control gates.
Information query
IPC分类:
