The present disclosure relates to forming multi - layered contact pads for a semiconductor device, wherein the various layers of the contact pad are formed using one or more thin - film deposition processes, such as an evaporation process. Each contact pad includes an adhesion layer, (20) which is formed over the device structure for the semiconductor device; a titanium nitride (TiN) barrier layer, (22) which is formed over the adhesion layer (24); and an overlay layer, which is formed over the barrier layer. At least the titanium nitride (TiN) barrier layer (22) is formed using an evaporation process.