公开(公告)号：WO2012064636A4

公开(公告)日：2012-10-26

申请号：PCT/US2011059542

申请日：2011-11-07

Applicant: CREE INC

Inventor： MIECZKOWSKI VAN ,  AGARWAL ANANT ,  GURGANUS JASON ,  HAGLEITNER HELMUT

IPC: H01L23/485

CPC classification number: H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05687 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01059 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1306 ,  H01L2224/45099 ,  H01L2924/00

Abstract: The present disclosure relates to forming multi - layered contact pads for a semiconductor device, wherein the various layers of the contact pad are formed using one or more thin - film deposition processes, such as an evaporation process. Each contact pad includes an adhesion layer, (20) which is formed over the device structure for the semiconductor device; a titanium nitride (TiN) barrier layer, (22) which is formed over the adhesion layer (24); and an overlay layer, which is formed over the barrier layer. At least the titanium nitride (TiN) barrier layer (22) is formed using an evaporation process.

Abstract translation: 本公开涉及形成用于半导体器件的多层接触焊盘，其中接触焊盘的各个层使用一个或多个薄膜沉积工艺（诸如蒸发工艺）形成。 每个接触焊盘包括形成在半导体器件的器件结构之上的粘合层（20）; 形成在所述粘合层（24）上方的氮化钛（TiN）阻挡层（22）; 以及覆盖层，其形成在阻挡层上。 至少使用蒸发工艺形成氮化钛（TiN）阻挡层（22）。

公开(公告)号：WO2006022873A3

公开(公告)日：2006-06-22

申请号：PCT/US2005010873

申请日：2005-03-30

Applicant: CREE INC ,  HABERERN KEVIN W ,  BERGMANN MICHAEL J ,  MIECZKOWSKI VAN ,  EMERSON DAVID T

Inventor： HABERERN KEVIN W ,  BERGMANN MICHAEL J ,  MIECZKOWSKI VAN ,  EMERSON DAVID T

IPC: H01L33/40 ,  H01L33/42

CPC classification number: H01L33/42 ,  H01L24/05 ,  H01L33/405 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

Abstract: Light emitting devices include an active region (14) of semiconductor material and a first contact (18) on the active region. The first contact (18) is configured such that photons emitted by the active region (14) pass through the first contact. A photon absorbing wire bond pad (22) is provided on the first contact. The wire bond pad (22) has an area less than the area of the first contact. A reflective structure (30) is disposed between the first contact (18) and the wire bond pad (22) such that the reflective structure (30) has substantially the same area as the wire bond pad. A second contact (20) is provided opposite the active region from the first contact. The reflective structure (30) may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided.

Abstract translation: 发光器件包括半导体材料的有源区（14）和有源区上的第一接触（18）。 第一触点（18）被配置为使得由有源区域（14）发射的光子通过第一触点。 光子吸收引线接合焊盘（22）设置在第一接触件上。 引线接合焊盘（22）的面积小于第一触点的面积。 反射结构（30）设置在第一触点（18）和引线接合焊盘（22）之间，使得反射结构（30）具有与引线接合焊盘基本相同的面积。 第二触点（20）设置成与第一触点相对的有源区域相对。 反射结构（30）可以仅设置在第一触点和引线接合焊盘之间。 还提供了制造这种装置的方法。

公开(公告)号：WO2012064636A3

公开(公告)日：2012-08-09

申请号：PCT/US2011059542

申请日：2011-11-07

Applicant: CREE INC

Inventor： MIECZKOWSKI VAN ,  AGARWAL ANANT ,  GURGANUS JASON ,  HAGLEITNER HELMUT

IPC: H01L23/485

CPC classification number: H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05687 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01059 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1306 ,  H01L2224/45099 ,  H01L2924/00

Abstract: The present disclosure relates to forming multi - layered contact pads for a semiconductor device, wherein the various layers of the contact pad are formed using one or more thin - film deposition processes, such as an evaporation process. Each contact pad includes an adhesion layer, (20) which is formed over the device structure for the semiconductor device; a titanium nitride (TiN) barrier layer, (22) which is formed over the adhesion layer (24); and an overlay layer, which is formed over the barrier layer. At least the titanium nitride (TiN) barrier layer (22) is formed using an evaporation process.

Abstract translation: 本公开涉及形成用于半导体器件的多层接触焊盘，其中使用一个或多个薄膜沉积工艺（诸如蒸发工艺）来形成接触焊盘的各个层。 每个接触垫包括形成在用于半导体器件的器件结构上的粘附层（20）; 氮化钛（TiN）阻挡层，（22），其形成在所述粘合层（24）上; 以及形成在阻挡层上的覆盖层。 至少氮化钛（TiN）阻挡层（22）使用蒸发工艺形成。

公开(公告)号：WO2006011936A3

公开(公告)日：2006-12-07

申请号：PCT/US2005010868

申请日：2005-03-30

Applicant: CREE INC ,  HABERERN KEVIN ,  BERGMANN MICHAEL JOHN ,  MIECZKOWSKI VAN ,  EMERSON DAVID TODD

Inventor： HABERERN KEVIN ,  BERGMANN MICHAEL JOHN ,  MIECZKOWSKI VAN ,  EMERSON DAVID TODD

IPC: H01L33/14

CPC classification number: H01L33/145 ,  H01S5/0421 ,  H01S5/2063 ,  H01S5/2068 ,  H01S5/32341

Abstract: Light emitting devices and methods of fabricating light emitting devices having a current blocking mechanism below the wire bond pad (22) are provided. The current blocking mechanism may be a reduced conduction region (30) in an active region (14) of the device. The current blocking mechanism could be a damage region of a layer on which a contact (18) is formed. The current blocking mechanism could be a Schottky contact between an ohmic contact (18) and the active region (14) of the device. A semiconductor junction, such as a PN junction could also be provided between the ohmic contact (18) and the active region (14).

Abstract translation: 提供了在引线接合焊盘（22）下方制造具有电流阻挡机构的发光器件的发光器件和方法。 电流阻塞机构可以是器件的有源区域（14）中的减小的导电区域（30）。 电流阻挡机构可以是其上形成有触点（18）的层的损伤区域。 电流阻塞机构可以是欧姆接触件（18）和器件的有源区域（14）之间的肖特基接触。 也可以在欧姆接触件（18）和有源区域（14）之间提供诸如PN结的半导体结。