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    REFLECTIVE OHMIC CONTACTS FOR SILICON CARBIDE INCLUDING A LAYER CONSISTING ESSENTIALLY OF NICKEL, METHODS OF FABRICATING SAME, AND LIGHT EMITTING DEVICES INCLUDING THE SAME
    1.
    发明申请
    REFLECTIVE OHMIC CONTACTS FOR SILICON CARBIDE INCLUDING A LAYER CONSISTING ESSENTIALLY OF NICKEL, METHODS OF FABRICATING SAME, AND LIGHT EMITTING DEVICES INCLUDING THE SAME 审中-公开
    用于硅碳化物的反射性OHMIC接触，包括基本上由镍制成的层，其制造方法和包括其的发光装置

    公开(公告)号：WO2004075309A2

    公开(公告)日：2004-09-02

    申请号：PCT/US2004003564

    申请日：2004-01-30

    Applicant: CREE INC ,  SLATER JR DAVID B ,  HAGLEITNER HELMUT

    Inventor： SLATER JR DAVID B ,  HAGLEITNER HELMUT

    IPC: H01L21/04 ,  H01L33/20 ,  H01L33/34 ,  H01L33/40 ,  H01L33/50 ,  H01L33/00

    CPC classification number: H01L33/405 ,  H01L21/0485 ,  H01L33/20 ,  H01L33/34 ,  H01L2224/48091 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: Reflective ohmic contacts for n-type silicon carbide include a layer consisting essentially of nickel on the silicon carbide. The layer consisting essentially of nickel is configured to provide an ohmic contact to the silicon carbide, and to allow transmission therethrough of optical radiation that emerges from the silicon carbide. A reflector layer is on the layer consisting essentially of nickel, opposite the silicon carbide. A barrier layer is on the reflector layer opposite the layer consisting essentially of nickel, and a bonding layer is on the barrier layer opposite the reflector layer. It has been found that the layer consisting essentially of nickel and the reflector layer thereon can provide a reflective ohmic contact for silicon carbide that can have low ohmic losses and/or high reflectivity.

    Abstract translation: n型碳化硅的反射欧姆接触包括在碳化硅上基本上由镍组成的层。 基本上由镍组成的层被配置为提供与碳化硅的欧姆接触，并且允许通过其从碳化硅出现的光辐射的透射。 反射层位于基本上由与碳化硅相对的镍构成的层上。 阻挡层位于与基本上由镍组成的层相反的反射器层上，并且粘结层位于与反射层相对的阻挡层上。 已经发现，基本上由镍和其上的反射器层组成的层可以为可以具有低欧姆损耗和/或高反射率的碳化硅提供反射欧姆接触。

    SILICON-RICH NICKEL-SILICIDE OHMIC CONTACTS FOR SIC SEMICONDUCTOR DEVICES
    2.
    发明申请
    SILICON-RICH NICKEL-SILICIDE OHMIC CONTACTS FOR SIC SEMICONDUCTOR DEVICES 审中-公开
    用于SIC半导体器件的富硅镍硅化物欧姆接触

    公开(公告)号：WO2006014346A3

    公开(公告)日：2006-09-21

    申请号：PCT/US2005023487

    申请日：2005-06-30

    Applicant: CREE INC ,  WARD ALAN III ,  HENNING JASON PATRICK ,  HAGLEITNER HELMUT ,  WIEBER KEITH DENNIS

    Inventor： WARD ALAN III ,  HENNING JASON PATRICK ,  HAGLEITNER HELMUT ,  WIEBER KEITH DENNIS

    IPC: H01L21/28 ,  H01L21/18 ,  H01L29/45

    CPC classification number: H01L29/1608 ,  H01L21/0455 ,  H01L21/0485 ,  H01L29/45 ,  Y10S438/931

    Abstract: A method of producing an ohmic contact and a resulting ohmic contact structure are disclosed. The method includes the steps of forming a deposited film of nickel and silicon on a silicon carbide surface at a temperature below which either element will react with silicon carbide and in respective proportions so that the atomic fraction of silicon in the deposited film is greater than the atomic fraction of nickel, and heating the deposited film of nickel and silicon to a temperature at which nickel-silicon compounds will form with an atomic fraction of silicon greater than the atomic fraction of nickel but below the temperature at which either element will react with silicon carbide. The method can further include the step of annealing the nickel-silicon compound to a temperature higher than the heating temperature for the deposited film, and within a region of the phase diagram at which free carbon does not exist.

    Abstract translation: 公开了一种产生欧姆接触和产生的欧姆接触结构的方法。 该方法包括以下步骤：在碳化硅表面上形成镍和硅的沉积膜，在该温度下，任一元素都将与碳化硅反应并且以各自的比例使得沉积膜中硅的原子分数大于 镍的原子分数，并且将沉积的镍和硅膜加热到镍 - 硅化合物将形成的温度，其中硅的原子分数大于镍的原子分数但低于任一元素将与硅反应的温度 碳化物。 该方法可以进一步包括将镍 - 硅化合物退火至高于沉积膜加热温度的温度的步骤，以及在不存在游离碳的相图区域内。

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