发明申请
WO2013067493A1 A PROCESS OF FORMING AN ALUMINUM p-DOPED SURFACE REGION OF AN n-DOPED SEMICONDUCTOR SUBSTRATE
审中-公开
形成正电极半导体衬底的铝合金表面区域的方法
- 专利标题： A PROCESS OF FORMING AN ALUMINUM p-DOPED SURFACE REGION OF AN n-DOPED SEMICONDUCTOR SUBSTRATE
- 专利标题（中）： 形成正电极半导体衬底的铝合金表面区域的方法
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申请号： PCT/US2012/063547申请日： 2012-11-05
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公开(公告)号： WO2013067493A1公开(公告)日： 2013-05-10
- 发明人: HANG, Kenneth Warren , PRINCE, Alistair Graeme , ROSE, Michael , YOUNG, Richard John Sheffield
- 申请人： E. I. DU PONT DE NEMOURS AND COMPANY
- 申请人地址： 1007 Market Street Wilmington, Delaware 19899 US
- 专利权人： E. I. DU PONT DE NEMOURS AND COMPANY
- 当前专利权人： E. I. DU PONT DE NEMOURS AND COMPANY
- 当前专利权人地址： 1007 Market Street Wilmington, Delaware 19899 US
- 代理机构： DIDONATO, Joseph J.
- 优先权： US61/555,519 20111104
- 主分类号： H01L31/0224
- IPC分类号： H01L31/0224 ; H01L31/18
摘要：
A process for the formation of at least one aluminum p-doped surface region of an n-type semiconductor substrate comprising the steps: (1) providing an n-type semiconductor substrate, (2) applying and drying an aluminum paste on at least one surface area of the n-type semiconductor substrate, (3) firing the dried aluminum paste, and (4) removing the fired aluminum paste with water, wherein the aluminum paste employed in step (2) includes particulate aluminum, an organic vehicle and 3 to 20 wt.% of glass frit, based on total aluminum paste composition.
IPC分类:
