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1.发明申请A PROCESS OF FORMING AN ALUMINUM p-DOPED SURFACE REGION OF A SEMICONDUCTOR SUBSTRATE 审中-公开形成半导体基板的铝合金表面区域的工艺
公开(公告)号：WO2013067490A1
公开(公告)日：2013-05-10
申请号：PCT/US2012/063541
申请日：2012-11-05
IPC分类号： H01L31/18 , H01L31/0224 , H01L21/22 , H01L21/225
CPC分类号： H01L31/1804 , H01L21/2205 , H01L21/2254 , H01L31/022425 , H01L31/02245 , H01L31/06 , Y02E10/547 , Y02P70/521
摘要： A process for the formation of at least one aluminum p-doped surface region of a semiconductor substrate comprising the steps: (1) providing a semiconductor substrate, (2) applying and drying an aluminum paste on at least one surface area of the semiconductor substrate, (3) firing the dried aluminum paste, and (4) removing the fired aluminum paste with water, wherein the aluminum paste employed in step (2) includes particulate aluminum, an organic vehicle and 3 to 20 wt.% of glass frit, based on total aluminum paste composition.
摘要翻译： 一种用于形成半导体衬底的至少一个铝p掺杂表面区域的方法，包括以下步骤：（1）提供半导体衬底，（2）在半导体衬底的至少一个表面区域上施加和干燥铝膏 （3）焙烧干燥的铝浆料，（4）用水去除烧制的铝浆料，其中步骤（2）中使用的铝浆料包括颗粒状铝，有机载体和3至20重量％的玻璃料， 基于总铝糊组成。
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公开(公告)号：WO2015120253A1
公开(公告)日：2015-08-13
申请号：PCT/US2015/014788
申请日：2015-02-06
CPC分类号： H01B3/306 , C08G73/1039 , C08G73/1042 , C08G73/1067 , C08K2003/382 , C08K2201/001 , C09D179/08 , H01B1/22 , H01B3/004 , H01B3/38 , H05K1/056 , H05K2201/0154 , Y10T428/25 , Y10T428/263 , C08K3/38 , C08L63/00
摘要： The present invention relates to polyimide pastes and methods of preparation. The polyimide pastes are used to prepare dielectric materials, and devices which include at least one layer which contain the polyimide pastes.
摘要翻译： 本发明涉及聚酰亚胺浆料及其制备方法。 聚酰亚胺浆料用于制备介电材料，以及包含至少一层含有聚酰亚胺浆料的装置。
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3.发明申请ALUMINIUM PASTE WITH NO OR POOR FIRE -THROUGH CAPABILITY AND USE THEREOF FOR BACK ELECTRODES OF PASSIVATED EMITTER AND REAR CONTACT SILICON SOLAR CELLS 审中-公开具有无或不良火焰能力的铝粉，并用于钝化发射体和后接触硅太阳能电池的背面电极
公开(公告)号：WO2013023169A1
公开(公告)日：2013-02-14
申请号：PCT/US2012/050413
申请日：2012-08-10
申请人： E. I. DU PONT DE NEMOURS AND COMPANY , HANG, Kenneth Warren , LAUDISIO, Giovanna , PRINCE, Alistair Graeme , WANG, Yueli , WATT, Rosalynne Sophie
发明人： HANG, Kenneth Warren , LAUDISIO, Giovanna , PRINCE, Alistair Graeme , WANG, Yueli , WATT, Rosalynne Sophie
IPC分类号： H01L31/0224 , H01B1/16 , H01B1/22 , C03C8/18 , C03C8/02
CPC分类号： H01L31/022425 , C03C8/04 , C03C8/06 , C03C8/18 , H01B1/16 , H01B1/22 , H01L31/02167 , H01L31/068 , H01L31/0682 , Y02E10/547
摘要： An aluminium paste having no or only poor fire-through capability comprises aluminium particles, at least one glass frit containing 0.5 to 15 wt.% SiO 2 , 0.3 to 10 wt.% Al203 and 67 to 75 wt.% Bi 2 O 3 (the weight percentages being based on the total weight of the glass frit) and an organic vehicle. The aluminium paste is used in the manufacture of aluminium back electrodes of PERC (passivated emitter and rear contact) silicon solar cells, wherein the paste is applied on a perforated dielectric passivation layer on the back-side of a silicon wafer and subsequently dried and fired or, alternatively, wherein the paste is applied on a non-perforated passivation layer on the back-side of a silicon wafer, dried and fired and the aluminium layer and the passivation layer are subsequently laser fired to produce perforations in the passivation layer and to form local BSF (back surface field) contacts.
摘要翻译： 没有或仅仅具有差的穿透能力的铝浆包括铝颗粒，至少一种含有0.5至15重量％SiO 2，0.3至10重量％Al 2 O 3和67至75重量％Bi 2 O 3的玻璃料（重量百分数为 基于玻璃料的总重量）和有机载体。 铝浆用于制造PERC（钝化发射器和后接触）硅太阳能电池的铝背电极，其中将糊剂施加在硅晶片背面上的穿孔电介质钝化层上，随后干燥和烧制 或者替代地，其中将糊剂施加在硅晶片的背侧上的非穿孔钝化层上，干燥和烧制，随后激光烧制铝层和钝化层以在钝化层中产生穿孔，并且 形成本地BSF（背面场）接触。
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4.发明申请A PROCESS OF FORMING AN ALUMINUM p-DOPED SURFACE REGION OF AN n-DOPED SEMICONDUCTOR SUBSTRATE 审中-公开形成正电极半导体衬底的铝合金表面区域的方法
公开(公告)号：WO2013067493A1
公开(公告)日：2013-05-10
申请号：PCT/US2012/063547
申请日：2012-11-05
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/02245 , H01L31/0288 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A process for the formation of at least one aluminum p-doped surface region of an n-type semiconductor substrate comprising the steps: (1) providing an n-type semiconductor substrate, (2) applying and drying an aluminum paste on at least one surface area of the n-type semiconductor substrate, (3) firing the dried aluminum paste, and (4) removing the fired aluminum paste with water, wherein the aluminum paste employed in step (2) includes particulate aluminum, an organic vehicle and 3 to 20 wt.% of glass frit, based on total aluminum paste composition.
摘要翻译： 一种用于形成n型半导体衬底的至少一个铝p掺杂表面区域的方法，包括以下步骤：（1）提供n型半导体衬底，（2）在至少一个 n型半导体衬底的表面积，（3）焙烧干燥的铝浆料，（4）用水去除煅烧的铝浆料，其中步骤（2）中使用的铝浆料包括颗粒状铝，有机载体和3 至20重量％的玻璃料，基于总铝浆组合物。
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公开(公告)号：WO2013036689A1
公开(公告)日：2013-03-14
申请号：PCT/US2012/054028
申请日：2012-09-06
申请人： E. I. DU PONT DE NEMOURS AND COMPANY , FUGE, Gareth Michael , MURAKAMI, Mamoru , PRINCE, Alistair Graeme , WILLMOTT, Peter James
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A process for the production of a LFC-PERC silicon solar cell having an aluminum back electrode wherein an aluminum paste having no or only poor fire-through capability and including particulate aluminum, glass frit, an organic vehicle and 0.01 to
摘要翻译： 一种制造具有铝背面电极的LFC-PERC硅太阳能电池的方法，其中铝膏不具有或仅具有差的穿透能力，并且包括颗粒状铝，玻璃料，有机载体和0.01至0.05重量％ 使用基于总铝糊组合物的至少一种氧化锑，并且其中所述至少一种氧化锑作为单独的颗粒组分和/或玻璃料组分存在于铝浆中。
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