公开(公告)号：WO2013067493A1

公开(公告)日：2013-05-10

申请号：PCT/US2012/063547

申请日：2012-11-05

申请人： E. I. DU PONT DE NEMOURS AND COMPANY

发明人： HANG, Kenneth Warren ,  PRINCE, Alistair Graeme ,  ROSE, Michael ,  YOUNG, Richard John Sheffield

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/02245 ,  H01L31/0288 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A process for the formation of at least one aluminum p-doped surface region of an n-type semiconductor substrate comprising the steps: (1) providing an n-type semiconductor substrate, (2) applying and drying an aluminum paste on at least one surface area of the n-type semiconductor substrate, (3) firing the dried aluminum paste, and (4) removing the fired aluminum paste with water, wherein the aluminum paste employed in step (2) includes particulate aluminum, an organic vehicle and 3 to 20 wt.% of glass frit, based on total aluminum paste composition.

摘要翻译： 一种用于形成n型半导体衬底的至少一个铝p掺杂表面区域的方法，包括以下步骤：（1）提供n型半导体衬底，（2）在至少一个 n型半导体衬底的表面积，（3）焙烧干燥的铝浆料，（4）用水去除煅烧的铝浆料，其中步骤（2）中使用的铝浆料包括颗粒状铝，有机载体和3 至20重量％的玻璃料，基于总铝浆组合物。

公开(公告)号：WO2013067490A1

公开(公告)日：2013-05-10

申请号：PCT/US2012/063541

申请日：2012-11-05

申请人： E. I. DU PONT DE NEMOURS AND COMPANY

发明人： HANG, Kenneth Warren ,  PRINCE, Alistair Graeme ,  ROSE, Michael ,  YOUNG, Richard John Sheffield

IPC分类号： H01L31/18 ,  H01L31/0224 ,  H01L21/22 ,  H01L21/225

CPC分类号： H01L31/1804 ,  H01L21/2205 ,  H01L21/2254 ,  H01L31/022425 ,  H01L31/02245 ,  H01L31/06 ,  Y02E10/547 ,  Y02P70/521

摘要： A process for the formation of at least one aluminum p-doped surface region of a semiconductor substrate comprising the steps: (1) providing a semiconductor substrate, (2) applying and drying an aluminum paste on at least one surface area of the semiconductor substrate, (3) firing the dried aluminum paste, and (4) removing the fired aluminum paste with water, wherein the aluminum paste employed in step (2) includes particulate aluminum, an organic vehicle and 3 to 20 wt.% of glass frit, based on total aluminum paste composition.

摘要翻译： 一种用于形成半导体衬底的至少一个铝p掺杂表面区域的方法，包括以下步骤：（1）提供半导体衬底，（2）在半导体衬底的至少一个表面区域上施加和干燥铝膏 （3）焙烧干燥的铝浆料，（4）用水去除烧制的铝浆料，其中步骤（2）中使用的铝浆料包括颗粒状铝，有机载体和3至20重量％的玻璃料， 基于总铝糊组成。