LOW TEMPERATURE FSREABLE THICK FILM SILVER PASTE
    5.
    发明申请
    LOW TEMPERATURE FSREABLE THICK FILM SILVER PASTE 审中-公开
    低温FSREABLE厚膜银浆

    公开(公告)号:WO2012170505A1

    公开(公告)日:2012-12-13

    申请号:PCT/US2012/041067

    申请日:2012-06-06

    CPC classification number: H01B1/16 C03C8/04 C03C8/18 H01B1/22

    Abstract: The present invention is directed to an electroconductive thick film paste composition comprising Ag and a Pb-free Bi-based glass frit both dispersed in an organic medium, wherein the paste is fireable at temperatures below 420°C. The paste is especially useful for forming electrodes on substrates such as glass or films, particularly electrochromic glass or films, that would be damaged by higher firing temperatures. The present invention is further directed to a device comprising an electrode formed from the paste composition and, in particular, to an electrochromic device comprising such an electrode.

    Abstract translation: 本发明涉及一种导电厚膜糊料组合物,其包含Ag和分散在有机介质中的无铅Bi基玻璃料,其中该糊料可在低于420℃的温度下燃烧。 该糊料特别适用于在诸如玻璃或薄膜,特别是电致变色玻璃或薄膜的基底上形成电极,其将被更高的烧制温度损坏。 本发明进一步涉及包括由糊状组合物形成的电极的装置,特别涉及包括这种电极的电致变色装置。

    A PROCESS OF FORMING AN ALUMINUM p-DOPED SURFACE REGION OF AN n-DOPED SEMICONDUCTOR SUBSTRATE
    6.
    发明申请
    A PROCESS OF FORMING AN ALUMINUM p-DOPED SURFACE REGION OF AN n-DOPED SEMICONDUCTOR SUBSTRATE 审中-公开
    形成正电极半导体衬底的铝合金表面区域的方法

    公开(公告)号:WO2013067493A1

    公开(公告)日:2013-05-10

    申请号:PCT/US2012/063547

    申请日:2012-11-05

    Abstract: A process for the formation of at least one aluminum p-doped surface region of an n-type semiconductor substrate comprising the steps: (1) providing an n-type semiconductor substrate, (2) applying and drying an aluminum paste on at least one surface area of the n-type semiconductor substrate, (3) firing the dried aluminum paste, and (4) removing the fired aluminum paste with water, wherein the aluminum paste employed in step (2) includes particulate aluminum, an organic vehicle and 3 to 20 wt.% of glass frit, based on total aluminum paste composition.

    Abstract translation: 一种用于形成n型半导体衬底的至少一个铝p掺杂表面区域的方法,包括以下步骤:(1)提供n型半导体衬底,(2)在至少一个 n型半导体衬底的表面积,(3)焙烧干燥的铝浆料,(4)用水去除煅烧的铝浆料,其中步骤(2)中使用的铝浆料包括颗粒状铝,有机载体和3 至20重量%的玻璃料,基于总铝浆组合物。

    THICK FILM PASTE CONTAINING LEAD-TELLURIUM-LITHIUM-TITANIUM-OXIDE AND ITS USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES
    7.
    发明申请
    THICK FILM PASTE CONTAINING LEAD-TELLURIUM-LITHIUM-TITANIUM-OXIDE AND ITS USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES 审中-公开
    包含铅 - 氧化钛 - 氧化钛的薄膜浆料及其在半导体器件制造中的应用

    公开(公告)号:WO2013022623A1

    公开(公告)日:2013-02-14

    申请号:PCT/US2012/048652

    申请日:2012-07-27

    CPC classification number: H01B1/22

    Abstract: The present invention is directed to an electroconductive thick film paste composition comprising electrically conductive Ag, a second electrically conductive metal selected from the group consisting of Ni, Al and mixtures thereof and a lead-tellurium-lithium-titanium-oxide all dispersed in an organic medium. The present invention is further directed to an electrode formed from the thick film paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode.

    Abstract translation: 本发明涉及一种导电厚膜糊组合物,其包含导电Ag,选自Ni,Al及其混合物的第二导电金属和全部分散在有机物中的铅 - 碲 - 锂 - 氧化钛 中。 本发明还涉及由厚膜糊剂组合物和半导体器件形成的电极,特别是包括这种电极的太阳能电池。

    LOW TEMPERATURE FIREABLE THICK FILM SILVER PASTE
    8.
    发明申请
    LOW TEMPERATURE FIREABLE THICK FILM SILVER PASTE 审中-公开
    低温可燃薄膜电镀膏

    公开(公告)号:WO2012170498A1

    公开(公告)日:2012-12-13

    申请号:PCT/US2012/041057

    申请日:2012-06-06

    CPC classification number: H01B1/16 C03C8/04 C03C8/18 H01B1/22

    Abstract: The present invention is directed to an electroconductive thick film paste composition comprising Ag and a Pb-free bismuth-tellurium oxide both dispersed in an organic medium, wherein the paste is fireable at temperatures below 420°C. The paste is especially useful for forming electrodes on substrates such as glass or films, particularly electrochromic glass or films, that would be damaged by higher firing temperatures. The present invention is further directed to a device comprising an electrode formed from the paste composition and, in particular, to an electrochromic device comprising such an electrode.

    Abstract translation: 本发明涉及一种导电厚膜糊料组合物,其包含分散在有机介质中的Ag和无铅的无铅铋 - 氧化碲,其中该糊料可在低于420℃的温度下燃烧。 该糊料特别适用于在诸如玻璃或薄膜,特别是电致变色玻璃或薄膜的基底上形成电极,其将被更高的烧制温度损坏。 本发明进一步涉及包括由糊状组合物形成的电极的装置,特别涉及包括这种电极的电致变色装置。

    GLASS COMPOSITION AND ITS USE IN CONDUCTIVE SILVER PASTE
    9.
    发明申请
    GLASS COMPOSITION AND ITS USE IN CONDUCTIVE SILVER PASTE 审中-公开
    玻璃组合物及其在导电银浆中的应用

    公开(公告)号:WO2013169311A1

    公开(公告)日:2013-11-14

    申请号:PCT/US2013/021114

    申请日:2013-01-11

    Abstract: A lead-tellurium-lithium-titanium-oxide glass composition is useful as a component of a conductive silver paste. Especially useful are P-containing and V-containing lead-tellurium-lithium-titanium-oxide glass composition. Conductive silver via paste comprising particulate conductive silver and any of the lead-tellurium-lithium-titanium-oxide glass compositions of the invention can be used in providing the metallization of the holes in the silicon wafers of MWT solar cells. The result is a metallic electrically conductive via between the collector lines on the front side and the emitter electrode on the back-side of the solar cell. The paste can also be used to form the collector lines on the front-side of the solar cell and the emitter electrode on the back-side of the solar cell.

    Abstract translation: 铅 - 碲 - 锂钛氧化物玻璃组合物可用作导电银浆的组分。 特别有用的是含P和V的铅碲 - 锂钛氧化物玻璃组合物。 包含颗粒状导电性银和本发明的铅 - 碲 - 锂 - 氧化钛玻璃组合物的导电性银通过糊可用于提供MWT太阳能电池的硅晶片中的孔的金属化。 结果是在前侧的集电极线与太阳能电池背面的发射极之间的金属导电通孔。 该糊料也可用于在太阳能电池的正面和太阳能电池背面上的发射电极上形成集电极线。

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