Invention Application
WO2013075028A1 AMORPHOUS OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR FABRICATION METHOD
审中-公开
非晶氧化物半导体薄膜晶体管制造方法
- Patent Title: AMORPHOUS OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR FABRICATION METHOD
- Patent Title (中): 非晶氧化物半导体薄膜晶体管制造方法
-
Application No.: PCT/US2012/065680Application Date: 2012-11-16
-
Publication No.: WO2013075028A1Publication Date: 2013-05-23
- Inventor: KIM, Cheonhong , CHANG, Tallis Young , HONG, John Hyunchul
- Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.
- Applicant Address: 5775 Morehouse Drive San Diego, California 92121-1714 US
- Assignee: QUALCOMM MEMS TECHNOLOGIES, INC.
- Current Assignee: QUALCOMM MEMS TECHNOLOGIES, INC.
- Current Assignee Address: 5775 Morehouse Drive San Diego, California 92121-1714 US
- Agency: BERGIN, Denise, S. et al.
- Priority: US13/299,780 20111118
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/66
Abstract:
This disclosure provides systems, methods and apparatus for fabricating thin film transistor (TFT) devices. In one aspect, a substrate having a source area, a drain area, and a channel area is provided. Metal cations are implanted in the oxide semiconductor layer overlying the source area and the drain area of the substrate. The metal cation implantation forms a doped n-type oxide semiconductor in the oxide semiconductor layer overlying the source area and the drain area of the substrate.
Information query
IPC分类:
