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    LASER ANNEALING TECHNIQUE FOR METAL OXIDE TFT
    1.
    发明申请
    LASER ANNEALING TECHNIQUE FOR METAL OXIDE TFT 审中-公开
    用于金属氧化物膜的激光退火技术

    公开(公告)号：WO2016048700A1

    公开(公告)日：2016-03-31

    申请号：PCT/US2015/050006

    申请日：2015-09-14

    Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.

    Inventor： HONG, John Hyunchul ,  FUNG, Tze-Ching ,  KIM, Cheonhong ,  NOMURA, Kenji

    IPC: H01L29/66 ,  H01L29/786

    CPC classification number: H01L21/02664 ,  H01L21/02565 ,  H01L29/66969 ,  H01L29/78693

    Abstract: This disclosure provides methods and apparatuses for annealing an oxide semiconductor in a thin film transistor (TFT). In one aspect, the method includes providing a substrate with a partially fabricated TFT structure formed on the substrate. The partially fabricated TFT structure can include an oxide semiconductor layer and a dielectric oxide layer on the oxide semiconductor layer. The oxide semiconductor layer is annealed by heating the dielectric oxide layer with an infrared laser under ambient conditions to a temperature below the melting temperature of the oxide semiconductor layer. The infrared laser radiation can be substantially absorbed by the dielectric oxide layer and can remove unwanted defects from the oxide semiconductor layer at an interface in contact with the dielectric oxide layer.

    Abstract translation: 本公开提供了在薄膜晶体管（TFT）中退火氧化物半导体的方法和装置。 在一个方面，该方法包括提供在基板上形成的部分制造的TFT结构的基板。 部分制造的TFT结构可以包括在氧化物半导体层上的氧化物半导体层和电介质氧化物层。 氧化物半导体层通过在环境条件下用红外激光器将电介质氧化物层加热到低于氧化物半导体层的熔融温度的温度来退火。 红外激光辐射可以被电介质氧化物层基本上吸收，并且可以在与电介质氧化物层接触的界面处从氧化物半导体层去除不想要的缺陷。

    SYSTEMS, DEVICES, AND METHODS FOR DRIVING AN ANALOG INTERFEROMETRIC MODULATOR UTILIZING DC COMMON WITH RESET
    2.
    发明申请
    SYSTEMS, DEVICES, AND METHODS FOR DRIVING AN ANALOG INTERFEROMETRIC MODULATOR UTILIZING DC COMMON WITH RESET 审中-公开
    用于驱动通过复位的直流通用模拟式干涉式调制器的系统，设备和方法

    公开(公告)号：WO2015183524A1

    公开(公告)日：2015-12-03

    申请号：PCT/US2015/029997

    申请日：2015-05-08

    Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.

    Inventor： VAN LIER, Wilhelmus Johannes Robertus ,  CHAN, Edward Keat Leem ,  KIM, Cheonhong ,  WEN, Bing

    IPC: G09G3/34 ,  G02B26/08

    CPC classification number: G09G3/3466 ,  G02B26/001 ,  G02B26/0841 ,  G09G2300/0421 ,  G09G2300/0426 ,  G09G2300/08 ,  G09G2300/0809 ,  G09G2310/0251 ,  G09G2310/0256 ,  G09G2310/06 ,  G09G2310/061

    Abstract: A display apparatus comprising an array of electromechanical display elements and a driver circuit coupled to the array is provided. The driver circuit is configured to apply a DC voltage to a first stationary electrode of the display element and adjust a bias voltage applied to a second stationary electrode of the display element from a first bias voltage to a second bias voltage before a reset period. The driver circuit is further configured to apply a first reset voltage to a movable electrode of the display element during the reset period, apply a write voltage to the movable electrode during a charging period to charge the movable electrode with a charge Q defined at least in part by the write voltage, and adjust the bias voltage applied to the second stationary electrode from the second bias voltage to a third bias voltage during a bias period.

    Abstract translation: 提供了包括机电显示元件阵列和耦合到阵列的驱动电路的显示装置。 驱动电路被配置为向显示元件的第一固定电极施加DC电压，并且在复位周期之前将施加到显示元件的第二固定电极的偏置电压从第一偏置电压调整到第二偏置电压。 驱动器电路还被配置为在复位期间向显示元件的可动电极施加第一复位电压，在充电期间向可动电极施加写入电压，以对至少在 部分由写入电压，并且在偏置周期期间将施加到第二固定电极的偏置电压从第二偏置电压调整到第三偏置电压。

    VOLTAGE BIASED PULL ANALOG INTERFEROMETRIC MODULATOR WITH CHARGE INJECTION CONTROL
    4.
    发明申请
    VOLTAGE BIASED PULL ANALOG INTERFEROMETRIC MODULATOR WITH CHARGE INJECTION CONTROL 审中-公开
    带电荷注入控制的电压偏置拉模式干涉式调节器

    公开(公告)号：WO2013165707A2

    公开(公告)日：2013-11-07

    申请号：PCT/US2013/037394

    申请日：2013-04-19

    Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.

    Inventor： CHAN, Edward K. ,  HONG, John H. ,  KIM, Cheonhong ,  LEE, Chong U. ,  WEN, Bing

    IPC: G09G3/34

    CPC classification number: G02B26/001 ,  G09G3/3466 ,  G09G3/3696 ,  G09G2310/0248 ,  G09G2310/0259 ,  G09G2310/0272 ,  G09G2320/0295 ,  Y10T29/49117

    Abstract: This disclosure provides systems, methods and apparatus for driving three-terminal electromechanical systems (EMS) devices. The driving systems and methods described herein include a switched capacitor charge injection circuit that is configured to isolate a single EMS device and transfer a desired amount of charge to the isolated device such that the device can be actuated to produce a desired optical, electrical or mechanical effect. The charge injection circuit can include an operational amplifier and can be connected such that the EMS device is placed in the feedback path of the operational amplifier.

    Abstract translation: 本公开提供用于驱动三端子机电系统（EMS）装置的系统，方法和装置。 本文描述的驱动系统和方法包括开关电容器电荷注入电路，其被配置为隔离单个EMS装置并将期望量的电荷转移到隔离装置，使得该装置可被致动以产生期望的光学，电或机械 影响。 电荷注入电路可以包括运算放大器并且可以被连接使得EMS装置被放置在运算放大器的反馈路径中。

    EMS DEVICE HAVING FLEXIBLE SUPPORT POSTS
    5.
    发明申请
    EMS DEVICE HAVING FLEXIBLE SUPPORT POSTS 审中-公开
    EMS设备具有灵活的支持位置

    公开(公告)号：WO2015148110A1

    公开(公告)日：2015-10-01

    申请号：PCT/US2015/019725

    申请日：2015-03-10

    Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.

    Inventor： HONG, John Hyunchul ,  MA, Jian Jim ,  WEN, Bing ,  CHANG, Tallis Young ,  CHAN, Edward Keat Leem ,  HONG, Brandon John ,  LAVERY, Kristopher Andrew ,  PAN, Yaoling ,  KIM, Cheonhong

    IPC: G02B26/00

    CPC classification number: G02B26/001 ,  G06T1/20 ,  G09G3/2003 ,  G09G3/346 ,  G09G3/3466 ,  G09G5/003

    Abstract: This disclosure provides apparatus, systems and methods for an electromechanical systems (EMS) device having one or more flexible support posts. In one aspect, the EMS device includes a substrate, a stationary electrode over the substrate, one or more flexible support posts over the substrate, and a movable electrode over the stationary electrode and supported by the one or more flexible support posts. The movable electrode is configured to move across a gap between the movable electrode and the stationary electrode upon electrostatic actuation, where the one or more flexible support posts include a first organic material and can be configured to compress to permit the movable electrode to move across the gap.

    Abstract translation: 本公开提供了具有一个或多个柔性支撑柱的机电系统（EMS）装置的装置，系统和方法。 一方面，EMS装置包括衬底，衬底上的固定电极，衬底上的一个或多个柔性支撑柱，以及位于固定电极上方并由一个或多个柔性支撑柱支撑的可移动电极。 可移动电极构造成在静电致动时跨越可移动电极和固定电极之间的间隙移动，其中一个或多个柔性支撑柱包括第一有机材料，并且可构造成压缩以允许可移动电极跨越 间隙。

    AMORPHOUS OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR FABRICATION METHOD
    7.
    发明申请
    AMORPHOUS OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR FABRICATION METHOD 审中-公开
    非晶氧化物半导体薄膜晶体管制造方法

    公开(公告)号：WO2013075028A1

    公开(公告)日：2013-05-23

    申请号：PCT/US2012/065680

    申请日：2012-11-16

    Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.

    Inventor： KIM, Cheonhong ,  CHANG, Tallis Young ,  HONG, John Hyunchul

    IPC: H01L29/786 ,  H01L29/66

    CPC classification number: H01L29/78693 ,  H01L29/66969 ,  H01L29/78618

    Abstract: This disclosure provides systems, methods and apparatus for fabricating thin film transistor (TFT) devices. In one aspect, a substrate having a source area, a drain area, and a channel area is provided. Metal cations are implanted in the oxide semiconductor layer overlying the source area and the drain area of the substrate. The metal cation implantation forms a doped n-type oxide semiconductor in the oxide semiconductor layer overlying the source area and the drain area of the substrate.

    Abstract translation: 本公开提供了用于制造薄膜晶体管（TFT）器件的系统，方法和装置。 一方面，提供了具有源极区域，漏极区域和沟道区域的衬底。 将金属阳离子注入覆盖衬底的源极区域和漏极区域的氧化物半导体层中。 金属阳离子注入在覆盖衬底的源极区和漏极区的氧化物半导体层中形成掺杂的n型氧化物半导体。

    FLEXIBLE EMS DEVICE USING ORGANIC MATERIALS
    9.
    发明申请
    FLEXIBLE EMS DEVICE USING ORGANIC MATERIALS 审中-公开
    灵活的EMS设备使用有机材料

    公开(公告)号：WO2015148107A1

    公开(公告)日：2015-10-01

    申请号：PCT/US2015/019676

    申请日：2015-03-10

    Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.

    Inventor： HONG, John Hyunchul ,  MA, Jian Jim ,  WEN, Bing ,  CHANG, Tallis Young ,  CHAN, Edward Keat Leem ,  HONG, Brandon John ,  LAVERY, Kristopher Andrew ,  PAN, Yaoling ,  KIM, Cheonhong

    IPC: G02B26/00

    CPC classification number: G02B26/001 ,  G06T1/20 ,  G09G3/2003 ,  G09G3/346 ,  G09G3/3466 ,  G09G5/003

    Abstract: This disclosure provides apparatus, systems and methods for an electromechanical systems (EMS) device made of organic materials. In one aspect, the EMS device includes a stationary electrode over a substrate and a movable electrode over the stationary electrode, where the movable electrode is configured to move across a gap between the movable electrode and the stationary electrode by electrostatic actuation. One or more layers between the movable electrode and the stationary electrode may be made of polymer material. One or more layers in the EMS device may include an optical layer made of polymer material and configured to attenuate energy of light corresponding to one or more wavelength ranges. In some implementations, the optical layer may include a plurality of absorber particles in a host material that is electrically insulating.

    Abstract translation: 本公开提供了由有机材料制成的机电系统（EMS）装置的装置，系统和方法。 一方面，EMS装置包括在基板上的固定电极和位于固定电极上方的可动电极，其中可动电极构造成通过静电驱动而跨越可移动电极和固定电极之间的间隙移动。 可动电极和固定电极之间的一层或多层可以由聚合物材料制成。 EMS装置中的一个或多个层可以包括由聚合物材料制成并被配置为衰减对应于一个或多个波长范围的光的能量的光学层。 在一些实施方案中，光学层可以包括电绝缘的主体材料中的多个吸收剂颗粒。

    METAL OXIDE LAYER COMPOSITION CONTROL BY ATOMIC LAYER DEPOSITION FOR THIN FILM TRANSISTOR
    10.
    发明申请
    METAL OXIDE LAYER COMPOSITION CONTROL BY ATOMIC LAYER DEPOSITION FOR THIN FILM TRANSISTOR 审中-公开
    用于薄膜晶体管的原子层沉积的金属氧化物层组成控制

    公开(公告)号：WO2014116500A1

    公开(公告)日：2014-07-31

    申请号：PCT/US2014/011890

    申请日：2014-01-16

    Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.

    Inventor： HONG, John Hyunchul ,  RYANG, Hong-Son ,  KIM, Cheonhong ,  FUNG, Tze-Ching

    IPC: H01L29/786 ,  H01L29/66

    CPC classification number: H01L29/78693 ,  G09G3/20 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/823807 ,  H01L29/1054 ,  H01L29/6675 ,  H01L29/78696

    Abstract: This disclosure provides systems, methods and apparatus for a thin film transistor (TFT) device on a substrate. In one aspect, the TFT device includes a gate electrode, an oxide semiconductor layer, and a gate insulator between the gate electrode and the oxide semiconductor layer. The oxide semiconductor layer includes at least two metal oxides, with the two metal oxides having a varying concentration relative to one another between a lower surface and an upper surface of the oxide semiconductor layer. The TFT device also includes a source metal adjacent to a portion of the oxide semiconductor layer and a drain metal adjacent to another portion of the oxide semiconductor layer. The composition of the oxide semiconductor layer can be precisely controlled by a sequential deposition technique using atomic layer deposition (ALD).

    Abstract translation: 本公开提供了用于衬底上的薄膜晶体管（TFT）器件的系统，方法和装置。 在一个方面，TFT器件包括栅电极，氧化物半导体层和栅电极和氧化物半导体层之间的栅极绝缘体。 氧化物半导体层包括至少两种金属氧化物，其中两种金属氧化物在氧化物半导体层的下表面和上表面之间具有相对于彼此变化的浓度。 TFT器件还包括与氧化物半导体层的一部分相邻的源极金属和与氧化物半导体层的另一部分相邻的漏极金属。 可以通过使用原子层沉积（ALD）的顺序沉积技术精确地控制氧化物半导体层的组成。

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