公开(公告)号：WO2022108908A1

公开(公告)日：2022-05-27

申请号：PCT/US2021/059473

申请日：2021-11-16

Applicant: LAM RESEARCH CORPORATION

Inventor： PAN, Yu ,  HSIEH, Yao-Tsung ,  BA, Xiaolan ,  GAO, Juwen

IPC: H01L21/285 ,  H01L21/768 ,  C23C16/02 ,  C23C16/455 ,  C23C16/06 ,  C23C16/04

Abstract: Provided herein are methods of depositing tungsten (W) films without depositing a nucleation layer. In certain embodiments, the methods involve depositing a conformal layer of boron (B) on a substrate. The substrate generally includes a feature to be filled with tungsten with the boron layer conformal to the topography of the substrate including the feature. The reducing agent layer is then exposed to a continuous flow of hydrogen and pulses of fluorine-containing tungsten precursor in a pulsed CVD process. The conformal boron layer is converted to a conformal tungsten layer.

公开(公告)号：WO2021127542A1

公开(公告)日：2021-06-24

申请号：PCT/US2020/066180

申请日：2020-12-18

Applicant: BLUE CURRENT, INC.

Inventor： BURDYNSKA, Joanna ,  VILLALUENGA, Irune ,  WUJCIK, Kevin

IPC: H01M4/133 ,  H01M4/485 ,  H01M4/62 ,  C08K2003/3009 ,  C08L31/04 ,  C08L9/02 ,  H01M10/0525 ,  H01M10/056 ,  H01M2300/0068 ,  H01M2300/0091 ,  H01M50/446

Abstract: Functionalized polymeric binders for electrolyte and electrode compositions include a polymer having a polymer backbone and functional groups. In some embodiments, a polymer includes a non-polar polymer backbone and a functional group that is 0.1 to 5 wt% of the polymer. In some embodiments, a polymer includes a polar backbone and a functional group that is 0.1 to 50% weight percent of the polymer. Also described are composites for electrolyte separators and electrodes that include argyrodite ion conductors and polar polymers.

公开(公告)号：WO2021076636A1

公开(公告)日：2021-04-22

申请号：PCT/US2020/055596

申请日：2020-10-14

Applicant: LAM RESEARCH CORPORATION

Inventor： SCHLOSS, Lawrence ,  THOMBARE, Shruti Vivek ,  YAN, Zhongbo ,  VAN CLEEMPUT, Patrick A. ,  COLLINS, Joshua

IPC: H01L21/768 ,  H01L21/321 ,  C23C16/02 ,  C23C16/06 ,  C23C16/56

Abstract: Embodiments of methods of filling features with molybdenum (Mo) include depositing a first layer of Mo in a feature including an opening and an interior and non-conformally treating the first layer such that regions near the opening preferentially treated over regions in the interior. In some embodiments, a second Mo layer is deposited on the treated first layer. Embodiments of methods of filling features with Mo include controlling Mo precursor flux to transition between conformal and non-conformal fill.

公开(公告)号：WO2020176582A1

公开(公告)日：2020-09-03

申请号：PCT/US2020/019828

申请日：2020-02-26

Applicant: LAM RESEARCH CORPORATION

Inventor： TAN, Zhongkui ,  SU, Xiaofeng ,  XIANG, Hua ,  QIN, Ce

IPC: H01L21/033 ,  H01L21/308 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: Provided herein are methods and related apparatus for mask reconstruction in an etch process. The methods involve depositing a sacrificial layer on the mask layer. The sacrificial layer may be used to protect portions of the mask layer during reshaping by inhibiting etching of or deposition on the mask layer. Following mask reshaping, the sacrificial layer may be removed using the same etch process that is used to etch the target material.

公开(公告)号：WO2020146280A1

公开(公告)日：2020-07-16

申请号：PCT/US2020/012409

申请日：2020-01-06

Applicant: BLUE CURRENT, INC.

Inventor： BURDYNSKA, Joanna ,  TERAN, Alexander ,  RUPERT, Benjamin ,  NASYBULIN, Eduard ,  HOFT, Richard ,  UPPAL, Simmi Kaur

IPC: H01G9/025 ,  C08G71/02 ,  C08G71/04 ,  C08L75/04 ,  H01M6/18

Abstract: Provided herein are methods of forming solid-state ionically conductive composite materials that include particles of an inorganic phase in a matrix of an organic phase. The organic phase includes a cross-linked polyurethane network. The methods involve forming the composite materials from a precursor that is cross-linked in-situ after being mixed with the particles. The cross-linking occurs under applied pressure that causes particle-to-particle contact. Once cross-linked, the applied pressure may be removed with the particles immobilized by the polymer matrix. The polyurethane network is configured for easy processability of uniform films and may be characterized by a hard phase content of at least 20%.

公开(公告)号：WO2020123987A1

公开(公告)日：2020-06-18

申请号：PCT/US2019/066301

申请日：2019-12-13

Applicant: LAM RESEARCH CORPORATION

Inventor： DENG, Ruopeng ,  BA, Xiaolan ,  YU, Tianhua ,  PAN, Yu ,  GAO, Juwen

IPC: H01L21/285 ,  H01L27/11551 ,  H01L27/11578

Abstract: Methods and apparatuses are described that provide tungsten deposition with low roughness. In some embodiments, the methods involve co-flowing nitrogen with hydrogen during an atomic layer deposition process of depositing tungsten that uses hydrogen as a reducing agent. In some embodiments, the methods involve depositing a cap layer, such as tungsten oxide or amorphous tungsten layer, on a sidewall surface of a 3D NAND structure. The disclosed embodiments have a wide variety of applications including depositing tungsten into 3D NAND structures.

公开(公告)号：WO2020023790A1

公开(公告)日：2020-01-30

申请号：PCT/US2019/043514

申请日：2019-07-25

Applicant: LAM RESEARCH CORPORATION

Inventor： THOMBARE, Shruti Vivek ,  BUTAIL, Gorun ,  VAN CLEEMPUT, Patrick A. ,  FISHER, Ilanit

IPC: C23C16/455 ,  C23C16/06 ,  C23C16/14 ,  H01L21/285

Abstract: Provided herein are methods and apparatus for deposition of pure metal films. The methods involve the use of oxygen-containing precursors. The metals include molybdenum (Mo) and tungsten (W). To deposit pure films with no more than one atomic percentage oxygen, the reducing agent to metal precursor ratio is significantly greater than 1. Molar ratios of 100:1 to 10000:1 may be used in some embodiments.

公开(公告)号：WO2019236909A1

公开(公告)日：2019-12-12

申请号：PCT/US2019/035875

申请日：2019-06-06

Applicant: LAM RESEARCH CORPORATION

Inventor： BUTAIL, Gorun ,  COLLINS, Joshua ,  KENNEDY, Griffin John ,  BAMNOLKER, Hanna

IPC: C23C16/02 ,  C23C16/14 ,  C23C16/40 ,  C23C16/455 ,  C23C16/04 ,  C23C16/54 ,  H01L21/02

Abstract: Provided are methods of treating a substrate surface to reduce diffusion of species that may be generated or provided in a subsequent operation. The substrate surface may be, for example, an oxide surface or a metal or metal compound film and may be a surface of a blanket film or of a liner film in a topographical feature according to various embodiments. Examples of treating the surface can include exposure to one or more chemical species and/or a thermal anneal. In some embodiments, the treatment increases the roughness of the grain boundary of the film surface. This can reduce the space available for diffusion and increase the tortuosity of diffusion paths through the film. In some embodiments, the treatment may involve forming compound molecules, for example, oxidation of a metal-containing film to form an oxide. The treated surface is less susceptible to diffusion of species such as halogen species.

公开(公告)号：WO2019213060A1

公开(公告)日：2019-11-07

申请号：PCT/US2019/029879

申请日：2019-04-30

Applicant: PROTEIN FLUIDICS, INC.

Inventor： CROMWELL, Evan Francis ,  TOY, Wilson ,  HALLER, Liran Yosef ,  HOXHA, Ori ,  DUNSTONE, Braxton ,  JIAO, Hong

IPC: B01L3/00

Abstract: Provided are valveless microfluidic flowchips comprising fluid flow barrier structures or configurations. Further provided are systems and methods having increased fluid transfer control in a valveless microfluidic flowchip. The systems and methods can be used in the present valveless microfluidic flowchips as well as in currently available valveless microfluidic flowchips.

公开(公告)号：WO2019204754A1

公开(公告)日：2019-10-24

申请号：PCT/US2019/028362

申请日：2019-04-19

Applicant: LAM RESEARCH CORPORATION

Inventor： CHANDRASHEKAR, Anand ,  LENZ, Eric H. ,  KHO, Leonard Wai Fung ,  CLEVENGER, Jeffrey Charles ,  HA, In Su

IPC: H01L21/687 ,  H01L21/67 ,  H01L21/02

Abstract: Provided herein are methods and apparatuses for controlling uniformity of processing at an edge region of a semiconductor wafer. In some embodiments, the methods include exposing an edge region to treatment gases such as etch gases and/or inhibition gases. Also provided herein are exclusion ring assemblies including multiple rings that may be implemented to provide control of the processing environment at the edge of the wafer.