Invention Application
WO2014159033A1 VTH CONTROL METHOD OF MULTIPLE ACTIVE LAYER METAL OXIDE SEMICONDUCTOR TFT
审中-公开
多层活性层金属氧化物半导体TFT的VTH控制方法
- Patent Title: VTH CONTROL METHOD OF MULTIPLE ACTIVE LAYER METAL OXIDE SEMICONDUCTOR TFT
- Patent Title (中): 多层活性层金属氧化物半导体TFT的VTH控制方法
-
Application No.: PCT/US2014/021611Application Date: 2014-03-07
-
Publication No.: WO2014159033A1Publication Date: 2014-10-02
- Inventor: YIM, Dong-Kil , LIM, Rodney Shunleong , SCHEER, Evelyn , WON, Tae Kyung , CHOI, Soo Young , YOU, Harvey
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: 3050 Bowers Avenue Santa Clara, CA 95054 US
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: 3050 Bowers Avenue Santa Clara, CA 95054 US
- Agency: PATTERSON, B. Todd et al.
- Priority: US61/780,734 20130313
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/336
Abstract:
The present invention generally relates to TFTs and methods for fabricating TFTs. When multiple layers are used for the semiconductor material in a TFT, a negative Vth shift may result. By exposing the semiconductor layer to an oxygen containing plasma and/or forming an etch stop layer thereover, the negative Vth shift may be negated.
Information query
IPC分类:
