公开(公告)号：WO2016162072A1

公开(公告)日：2016-10-13

申请号：PCT/EP2015/057769

申请日：2015-04-09

Applicant: APPLIED MATERIALS, INC. ,  PARK, Hyun Chan ,  SCHEER, Evelyn ,  YIM, Dong-Kil

Inventor： PARK, Hyun Chan ,  SCHEER, Evelyn ,  YIM, Dong-Kil

IPC: C23C14/56 ,  C23C14/35 ,  C23C14/34 ,  H01J37/34

CPC classification number: C23C14/562 ,  C23C14/3464 ,  C23C14/352 ,  H01J37/32376 ,  H01J37/32733 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/342 ,  H01J37/3438 ,  H01J37/3455 ,  H01J37/347

Abstract: The present disclosure relates to a method for material deposition on a substrate, including moving a substrate (10) into a processing zone in a vacuum chamber having an array of at least three sputter cathodes (110, 120), wherein each of the at least three sputter cathodes (110, 120) provides a plasma zone (116, 126) in which a deposition material is supplied during operation of the at least three sputter cathodes (110, 120), and rotating the plasma zone (116, 126) only once around a respective rotational axis (118, 128) from a first rotational position (140, 140) to a second rotational position (144, 144), wherein each plasma zone (116, 126) is directed away from the processing zone in the first rotational position (140, 140), and wherein each plasma zone (116, 126) moves over the processing zone during rotating from the first rotational position (140, 140) to the second rotational position (144, 144).

Abstract translation: 本公开涉及一种用于在衬底上材料沉积的方法，包括将衬底（10）移动到具有至少三个溅射阴极（110,120）的阵列的真空室中的处理区域中，其中至少 三个溅射阴极（110,120）提供等离子体区域（116,126），其中在至少三个溅射阴极（110,120）的操作期间提供沉积材料，并且仅等离子体区域（116,126）旋转 一次围绕从第一旋转位置（140,140）到第二旋转位置（144,144）的相应旋转轴线（118,128），其中每个等离子体区域（116,126）被引导离开处理区域 第一旋转位置（140,140），并且其中每个等离子体区域（116,126）在从第一旋转位置（140,140）旋转到第二旋转位置（144,144）期间在处理区域上移动。

公开(公告)号：WO2013026491A1

公开(公告)日：2013-02-28

申请号：PCT/EP2011/064668

申请日：2011-08-25

Applicant: APPLIED MATERIALS, INC. ,  SCHEER, Evelyn ,  GRAW, Oliver

Inventor： SCHEER, Evelyn ,  GRAW, Oliver

IPC: C23C14/34 ,  H01J37/34

CPC classification number: H01J37/3417 ,  C23C14/3407 ,  H01J37/34 ,  H01J37/3414 ,  H01J37/3435

Abstract: A deposition apparatus for depositing a layer of deposition material on a substrate is provided. The apparatus includes a substrate support adapted for holding the substrate; a target support (520) adapted for holding a target assembly. The target assembly includes a backing element and at least two target elements (510, 511) arranged on the backing element next to each other so that a gap (530) is formed between the at least two target elements. The gap between the target elements is to have a width (w). Further, the substrate support and the target support are arranged with respect to each other so that the ratio of distance between substrate and target (570) element to the gap width (w) is about 150 and greater.

Abstract translation: 提供了一种用于在基板上沉积沉积材料层的沉积装置。 该装置包括适于保持基板的基板支撑件; 适于保持目标组件的目标支撑件（520）。 目标组件包括背衬元件和布置在彼此靠近的背衬元件上的至少两个目标元件（510,511），使得在至少两个目标元件之间形成间隙（530）。 目标元素之间的间隙具有宽度（w）。 此外，基板支撑件和目标支撑件相对于彼此布置，使得基板和目标（570）元件之间的距离与间隙宽度（w）的比率为约150°或更大。

公开(公告)号：WO2015172835A1

公开(公告)日：2015-11-19

申请号：PCT/EP2014/059975

申请日：2014-05-15

Applicant: APPLIED MATERIALS, INC. ,  BENDER, Marcus ,  PIERALISI, Fabio ,  SCHEER, Evelyn ,  SEVERIN, Daniel ,  GÄRTNER, Harald ,  LINDENBERG, Ralph

Inventor： BENDER, Marcus ,  PIERALISI, Fabio ,  SCHEER, Evelyn ,  SEVERIN, Daniel ,  GÄRTNER, Harald ,  LINDENBERG, Ralph

IPC: C23C14/22 ,  C23C14/35 ,  C23C14/56 ,  H01J37/34

CPC classification number: C23C14/225 ,  C23C14/352 ,  C23C14/568 ,  H01J37/32733 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/3429 ,  H01J37/345 ,  H01J37/3452

Abstract: According to an embodiment, a sputter deposition apparatus for coating a substrate is provided. The sputter deposition apparatus has two or more coating regions for coating the substrate. The sputter deposition apparatus includes a first substrate guiding system for guiding the substrate in a first coating region, wherein the first substrate guiding system defines a first substrate transport direction. The sputter deposition apparatus further includes a second substrate guiding system for guiding the substrate in a second coating region, the second substrate guiding system defining a second substrate transport direction. The second substrate transport direction is the same direction as the first substrate transport direction or is different from the first substrate transport direction. The sputter deposition apparatus further includes a first cathode assembly adapted for generating one or more plasma regions in the first coating region, a second cathode assembly adapted for generating one or more plasma regions in the first coating region, a third cathode assembly adapted for generating one or more plasma regions in the second coating region, and a fourth cathode assembly adapted for generating one or more plasma regions in the second coating region. The first cathode assembly includes: a first rotary target assembly adapted for rotating a target material around a first rotation axis; and a first magnet assembly fixedly positioned in the first rotary target assembly, the first magnet assembly having a first principal plane forming a first angle with a first reference plane which contains the first rotation axis and is perpendicular to the first substrate transport direction. The second cathode assembly includes: a second rotary target assembly adapted for rotating a target material around a second rotation axis; and a second magnet assembly fixedly positioned in the second rotary target assembly, the second magnet assembly having a second principal plane, the second principal plane being parallel to the first principal plane. The third cathode assembly includes: a third rotary target assembly adapted for rotating a target material around a third rotation axis; and a third magnet assembly fixedly positioned in the third rotary target assembly, the third magnet assembly having a third principal plane forming a second angle with a second reference plane which contains the third rotation axis and is perpendicular to the second substrate transport direction, wherein the second angle is different from the first angle. The fourth cathode assembly includes: a fourth rotary target assembly adapted for rotating a target material around a fourth rotation axis; and a fourth magnet assembly fixedly positioned in the fourth rotary target assembly, the fourth magnet assembly having a fourth principal plane, the fourth principal plane being parallel to the third principal plane.

Abstract translation: 根据实施例，提供了一种用于涂覆基板的溅射沉积设备。 溅射沉积装置具有用于涂覆基板的两个或更多个涂覆区域。 溅射沉积设备包括用于在第一涂覆区域中引导衬底的第一衬底引导系统，其中第一衬底引导系统限定第一衬底输送方向。 溅射沉积设备还包括用于在第二涂覆区域中引导衬底的第二衬底引导系统，第二衬底引导系统限定第二衬底输送方向。 第二基板输送方向与第一基板输送方向相同，也可以不同于第一基板输送方向。 溅射沉积设备还包括适于在第一涂覆区域中产生一个或多个等离子体区域的第一阴极组件，适于在第一涂覆区域中产生一个或多个等离子体区域的第二阴极组件，适于产生一个 或更多的等离子体区域，以及适于在第二涂覆区域中产生一个或多个等离子体区域的第四阴极组件。 第一阴极组件包括：适于围绕第一旋转轴线旋转目标材料的第一旋转靶组件; 以及固定地定位在所述第一旋转靶组件中的第一磁体组件，所述第一磁体组件具有与包含所述第一旋转轴线且垂直于所述第一衬底输送方向的第一参考平面形成第一角度的第一主平面。 第二阴极组件包括：适于围绕第二旋转轴线转动目标材料的第二旋转靶组件; 以及固定地定位在所述第二旋转靶组件中的第二磁体组件，所述第二磁体组件具有第二主平面，所述第二主平面平行于所述第一主平面。 第三阴极组件包括：适于围绕第三旋转轴线转动目标材料的第三旋转靶组件; 以及固定地定位在所述第三旋转靶组件中的第三磁体组件，所述第三磁体组件具有第三主平面，所述第三主平面与包含所述第三旋转轴线且垂直于所述第二基板输送方向的第二参考平面形成第二角度，其中， 第二角度与第一角度不同。 第四阴极组件包括：适于围绕第四旋转轴线旋转目标材料的第四旋转靶组件; 以及固定地定位在所述第四旋转靶组件中的第四磁体组件，所述第四磁体组件具有第四主平面，所述第四主平面平行于所述第三主平面。

公开(公告)号：WO2013020589A1

公开(公告)日：2013-02-14

申请号：PCT/EP2011/063714

申请日：2011-08-09

Applicant: APPLIED MATERIALS, INC. ,  SCHEER, Evelyn ,  HANIKA, Markus ,  LINDENBERG, Ralph ,  BENDER, Marcus ,  LOPP, Andreas ,  SCHWANITZ, Konrad ,  PIERALISI, Fabio ,  LIU, Jian

Inventor： SCHEER, Evelyn ,  HANIKA, Markus ,  LINDENBERG, Ralph ,  BENDER, Marcus ,  LOPP, Andreas ,  SCHWANITZ, Konrad ,  PIERALISI, Fabio ,  LIU, Jian

IPC: C23C14/04 ,  C23C16/04

CPC classification number: C23C14/042 ,  C23C16/042

Abstract: An deposition apparatus for forming a deposition material layer on a substrate is described. The deposition apparatus includes a substrate support adapted for holding a substrate; and an edge (660) exclusion mask (640) for covering a periphery of the substrate (610) during layer deposition. The mask has at least one frame portion defining an aperture. The at least one frame portion of the mask is adapted for being moved (670,680) with respect to the substrate depending on the amount of deposition material deposited on the at least one frame portion of the mask. Further, a method for depositing a deposition material layer on a substrate using an edge exclusion mask is described.

Abstract translation: 描述了用于在基板上形成沉积材料层的沉积装置。 沉积设备包括适于保持衬底的衬底支撑件; 以及用于在层沉积期间覆盖衬底（610）的周边的边缘（660）排除掩模（640）。 掩模具有限定孔的至少一个框架部分。 掩模的至少一个框架部分适于相对于基板移动（670,680），这取决于沉积在掩模的至少一个框架部分上的沉积材料的量。 此外，描述了使用边缘排除掩模在基板上沉积沉积材料层的方法。

公开(公告)号：WO2011039316A1

公开(公告)日：2011-04-07

申请号：PCT/EP2010/064574

申请日：2010-09-30

Applicant: APPLIED MATERIALS, INC. ,  BENDER, Marcus ,  HANIKA, Markus ,  SCHEER, Evelyn ,  PIERALISI, Fabio ,  MAHNKE, Guido

Inventor： BENDER, Marcus ,  HANIKA, Markus ,  SCHEER, Evelyn ,  PIERALISI, Fabio ,  MAHNKE, Guido

IPC: H01J37/34

CPC classification number: H01J37/3405 ,  H01J37/3452 ,  H01J37/3455

Abstract: A method is provided for coating a substrate (100) with a cathode assembly (10) having a rotatable target (20). The rotatable target has at least one magnet assembly (25) positioned there within. The method includes positioning the magnet assembly at a first position so that it is asymmetrically aligned with respect to a plane (22) perpendicularly extending from the substrate (100) to the axis (21) of the rotatable target for a predetermined first time interval; positioning the magnet assembly at a second position that is asymmetrically aligned with respect to said plane (22) for a predetermined second time interval; and providing a voltage to the rotatable target that is varied over time during coating. Further, a coater is provided that includes a cathode assembly with a rotatable curved target; and two magnet assemblies positioned within the rotatable curved target wherein the distance between the two magnet assemblies can be varied.

Abstract translation: 提供了一种用具有可旋转靶（20）的阴极组件（10）涂覆基底（100）的方法。 可旋转靶具有定位在其内的至少一个磁体组件（25）。 该方法包括将磁体组件定位在第一位置，使得其相对于从基板（100）垂直延伸到可旋转靶的轴线（21）的平面（22）以预定的第一时间间隔对准地对准; 将磁体组件定位在相对于所述平面（22）不对称对准预定的第二时间间隔的第二位置处; 以及向涂覆期间随时间变化的可旋转靶提供电压。 此外，提供一种包括具有可旋转弯曲目标的阴极组件的涂布机; 以及位于可旋转弯曲目标内的两个磁体组件，其中两个磁体组件之间的距离可以改变。

公开(公告)号：WO2021052595A1

公开(公告)日：2021-03-25

申请号：PCT/EP2019/075250

申请日：2019-09-19

Applicant: APPLIED MATERIALS, INC. ,  KHAMEHGIR, Pejman ,  HOFMANN, Annabelle ,  SCHEER, Evelyn ,  BUSCHBECK, Wolfgang ,  KREBS, Matthias

Inventor： KHAMEHGIR, Pejman ,  HOFMANN, Annabelle ,  SCHEER, Evelyn ,  BUSCHBECK, Wolfgang ,  KREBS, Matthias

IPC: H01L51/00 ,  C23C14/12 ,  C23C14/24 ,  C23C14/56 ,  C23C14/04

Abstract: A method of operating an evaporation source (100) in a vacuum chamber (11) is provided. The evaporation source comprises a vapor distribution assembly (130) with one or more vapor outlets (131) and a shielding device (120) attached to the vapor distribution assembly (130). The method comprises (i) emitting evaporated source material (15) from the one or more vapor outlets, wherein at least a part of the evaporated source material is blocked by the shielding device, (ii) detaching the shielding device (120) from the vapor distribution assembly (130) in the vacuum chamber, and (iii) cleaning the shielding device (120). Further, a shield handling apparatus (180) for cleaning a shielding device of an evaporation source in a vacuum chamber is provided, as well as an evaporation system (200) comprising a shield handling apparatus (180).

公开(公告)号：WO2014159033A1

公开(公告)日：2014-10-02

申请号：PCT/US2014/021611

申请日：2014-03-07

Applicant: APPLIED MATERIALS, INC.

Inventor： YIM, Dong-Kil ,  LIM, Rodney Shunleong ,  SCHEER, Evelyn ,  WON, Tae Kyung ,  CHOI, Soo Young ,  YOU, Harvey

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: The present invention generally relates to TFTs and methods for fabricating TFTs. When multiple layers are used for the semiconductor material in a TFT, a negative Vth shift may result. By exposing the semiconductor layer to an oxygen containing plasma and/or forming an etch stop layer thereover, the negative Vth shift may be negated.

Abstract translation: 本发明一般涉及TFT和TFT的制造方法。 当TFT中的半导体材料使用多层时，可能产生负的Vth偏移。 通过将半导体层暴露于含氧等离子体和/或在其上形成蚀刻停止层，可以否定负的Vth偏移。

公开(公告)号：WO2012031962A1

公开(公告)日：2012-03-15

申请号：PCT/EP2011/065046

申请日：2011-08-31

Applicant: APPLIED MATERIALS, INC. ,  SCHEER, Evelyn ,  GRAW, Oliver ,  WEBER, Roland ,  SCHREIBER, Udo

Inventor： SCHEER, Evelyn ,  GRAW, Oliver ,  WEBER, Roland ,  SCHREIBER, Udo

IPC: H01L29/49

CPC classification number: H01L29/4908 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02266 ,  H01L21/28008 ,  H01L29/66765

Abstract: A method for forming a thin-film transistor gate insulating layer (100; 302) over a substrate (102) disposed in a processing chamber (104) is provided. The method includes: introducing a processing gas (116) for producing a plasma in the processing chamber (104); heating the substrate (102) to a substrate processing temperature of between 50 and 350° C; and depositing silicon oxide, silicon oxynitride, or silicon nitride over the heated substrate (102) by sputtering a target assembly (108) at a medium frequency.

Abstract translation: 提供了一种在设置在处理室（104）中的衬底（102）上形成薄膜晶体管栅极绝缘层（100; 302）的方法。 该方法包括：在处理室（104）中引入用于产生等离子体的处理气体（116）; 将基板（102）加热到基板处理温度在50和350℃之间; 以及通过以中频溅射靶组件（108），在加热的衬底（102）上沉积氧化硅，氮氧化硅或氮化硅。

公开(公告)号：WO2013178252A1

公开(公告)日：2013-12-05

申请号：PCT/EP2012/060055

申请日：2012-05-29

Applicant: APPLIED MATERIALS, INC. ,  SCHEER, Evelyn ,  HANIKA, Markus ,  SCHWANITZ, Konrad ,  PIERALISI, Fabio ,  KLOEPPEL, Andreas ,  LIU, Jian ,  LOPP, Andreas

Inventor： SCHEER, Evelyn ,  HANIKA, Markus ,  SCHWANITZ, Konrad ,  PIERALISI, Fabio ,  KLOEPPEL, Andreas ,  LIU, Jian ,  LOPP, Andreas

IPC: C23C14/35 ,  H01J37/34

CPC classification number: H01J37/3473 ,  C23C14/35 ,  C23C14/352 ,  H01J37/32568 ,  H01J37/3405 ,  H01J37/3417 ,  H01J2237/3323

Abstract: A method for coating a substrate by means of a cathode arrangement including at least two rotatable cathodes is disclosed. The method includes rotating at least one of the at least two rotatable cathodes in a first direction, and, at the same time, rotating at least one of the at least two rotatable cathodes in a second direction. The first direction is opposite to the second direction. Furthermore, a controller for controlling a coating process is disclosed. Furthermore, a coater for coating a substrate is disclosed. The coater includes a cathode arrangement with at least two rotatable cathodes and a controller as disclosed herein.

Abstract translation: 公开了一种通过包括至少两个可旋转阴极的阴极装置涂覆基板的方法。 该方法包括在第一方向上旋转至少两个可旋转阴极中的至少一个，并且同时在第二方向旋转至少两个可旋转阴极中的至少一个。 第一方向与第二方向相反。 此外，公开了一种用于控制涂布工艺的控制器。 此外，公开了一种用于涂覆基材的涂布机。 涂布机包括具有至少两个可旋转阴极的阴极装置和如本文所公开的控制器。

公开(公告)号：WO2013060355A1

公开(公告)日：2013-05-02

申请号：PCT/EP2011/068552

申请日：2011-10-24

Applicant: APPLIED MATERIALS, INC. ,  SCHEER, Evelyn ,  HANIKA, Markus ,  LINDENBERG, Ralph ,  BENDER, Marcus ,  LOPP, Andreas ,  SCHWANITZ, Konrad ,  PIERALISI, Fabio ,  LIU, Jian

Inventor： SCHEER, Evelyn ,  HANIKA, Markus ,  LINDENBERG, Ralph ,  BENDER, Marcus ,  LOPP, Andreas ,  SCHWANITZ, Konrad ,  PIERALISI, Fabio ,  LIU, Jian

IPC: C23C14/34 ,  C23C14/35 ,  H01J37/34

CPC classification number: H01J37/32532 ,  C23C14/3407 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3455

Abstract: A cathode assembly (130; 200; 300; 400) for a sputter deposition apparatus and a method for coating a substrate is provided. The cathode assembly has a coating side for coating on a substrate. Further, the cathode assembly includes a rotary target assembly adapted for rotating a target material (210; 310; 410) around a rotary axis (220; 320; 420); at least a first magnet assembly (230; 330; 340; 430; 431; 432; 433) having an inner magnet pole and at least one outer magnet poles and being adapted for generating one or more plasma regions (240; 250; 340; 350; 440; 441; 442; 443). The cathode assembly (130; 200; 300; 400) has a first angular coordinate for a magnet pole, the magnet pole being provided for the coating side, and a second angular coordinate for a further magnet pole, the magnet pole being provided for the coating side; wherein the first angular coordinate (260; 360; 460) and the second angular coordinate (270; 370; 461) define an angle a larger than about 20 degrees and smaller than about 160 degrees.

Abstract translation: 提供了一种用于溅射沉积设备的阴极组件（130; 200; 300; 400）和一种用于涂覆衬底的方法。 阴极组件具有用于在基板上涂覆的涂层侧。 此外，阴极组件包括适于围绕旋转轴线（220; 320; 420）旋转靶材料（210; 310; 410）的旋转靶组件; 至少一个具有内磁极和至少一个外磁极的第一磁体组件（230; 330; 340; 430; 431; 432; 433），并适于产生一个或多个等离子体区域（240; 250; 340; 350; 440; 441; 442; 443）。 阴极组件（130; 200; 300; 400）具有用于磁极的第一角度坐标，为涂层侧提供磁极，并且为另一个磁极设置第二角坐标，磁极设置用于 涂层面 其中所述第一角坐标（260; 360; 460）和所述第二角坐标（270; 370; 461）限定大于约20度且小于约160度的角度。