Invention Application
- Patent Title: METHODS FOR SPATIAL METAL ATOMIC LAYER DEPOSITION
- Patent Title (中): 空间金属原子层沉积的方法
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Application No.: PCT/US2016/058346Application Date: 2016-10-22
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Publication No.: WO2017070634A1Publication Date: 2017-04-27
- Inventor: CHAN, Kelvin , CHEN, Yihong
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: 3050 Bowers Avenue Santa Clara, California 95054 US
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: 3050 Bowers Avenue Santa Clara, California 95054 US
- Agency: BLANKMAN, Jeffrey I.
- Priority: US62/245,875 20151023
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/28 ; H01L21/205
Abstract:
Methods for depositing a film comprising cyclical exposure of a substrate surface to a silicon precursor to form a nucleation layer and sequential exposure to a metal precursor and a reductant to form a metal layer on the nucleation layer.
Information query
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