A method of making a semiconductor device can comprise providing a temporary carrier comprising a semiconductor die mounting site, and forming an insulating layer over the temporary carrier. Conductive pads can be formed within openings in the insulating layer and be positioned both within and without the die mounting area. A backside redistribution layer (RDL) can be formed over the temporary carrier before mounting a semiconductor die at the die mounting site. Conductive interconnects can be formed over the temporary carrier in a periphery of the semiconductor die mounting site. A semiconductor die can be mounted face up to the insulating layer. The conductive interconnects, backside RDL, and semiconductor die can be encapsulated with a mold compound. A build-up interconnect structure can be formed and connected to the semiconductor die and the conductive interconnects. The temporary carrier can be removed and the conductive pads exposed in a grinding process.