The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably comprises at least the following steps: Introducing at least a first source gas into a process chamber, said first source gas comprising Si; introducing at least one second source gas into the process chamber, the second source gas comprising C; electrically energizing at least one separator element disposed in the process chamber to heat the separator element; setting a deposition rate of more than 200µm/h, wherein a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and wherein the surface of the deposition element is heated to a temperature in the range between 1300°C and 1800°C.