公开(公告)号：WO2022123084A2

公开(公告)日：2022-06-16

申请号：PCT/EP2021/085513

申请日：2021-12-13

Applicant: ZADIENT TECHNOLOGIES SAS

Inventor： CRÖSSMANN, Ivo ,  SCHAAFF, Friedrich ,  TIEFEL, Hilmar Richard ,  CERAN, Kagan

IPC: C30B35/00 ,  C30B29/36 ,  C30B23/02 ,  C30B23/00 ,  C30B25/08 ,  C30B25/14 ,  C30B25/18 ,  C23C16/32 ,  C01B32/956 ,  C23C16/325 ,  C23C16/4404 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/46

Abstract: The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably comprises at least the following steps: Introducing at least a first source gas into a process chamber, said first source gas compris- ing Si, introducing at least one second source gas into the process chamber, the second source gas comprising C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200µm/h, wherein a pressure in the process chamber of more than 1 bar is generated by the introduc- tion of the first source gas and/or the second source gas, and wherein the surface of the deposition element is heated to a temperature in the range be- tween 1300°C and 1800°C.

公开(公告)号：WO2023057542A1

公开(公告)日：2023-04-13

申请号：PCT/EP2022/077767

申请日：2022-10-06

Applicant: AIXTRON SE

Inventor： HOLZWARTH, Jared Lee ,  KOLLBERG, Marcel ,  MUKINOVIC, Merim ,  STRAUCH, Stephan

IPC: C23C16/32 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C30B25/10 ,  C30B25/12 ,  H01L21/687 ,  C23C16/325 ,  C23C16/45508 ,  C23C16/4558 ,  C23C16/4581 ,  C23C16/4584 ,  C23C16/4585 ,  C23C16/4586 ,  C30B29/36 ,  H01L21/67103 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771

Abstract: Die Erfindung betrifft einen in einem CVD-Reaktor angeordneten Tragring (20), der Teil einer Lageranordnung zur Lagerung eines Substrates (10) ist, die oberhalb eines Suszeptors angeordnet ist, und vom Suszeptor mit Wärme versorgt wird, wobei wesentlich ist, dass die Wärme über einen Ringsteg (33) des Tragrings (20) vom Suszeptor zu einem radial äußeren Bereich (21) oder zu einem radial inneren Bereich (22) des Tragrings (20) übertragen wird.

公开(公告)号：WO2022029377A1

公开(公告)日：2022-02-10

申请号：PCT/FR2021/051281

申请日：2021-07-09

Applicant: SAFRAN CERAMICS

Inventor： DELEHOUZE, Arnaud ,  BOUILLON, Eric ,  GOUJARD, Stéphane, Roger, André ,  MONTAUDON, Marc

IPC: B33Y10/00 ,  B29C64/159 ,  B29C64/268 ,  C04B35/01 ,  C04B35/524 ,  C04B35/56 ,  C04B35/571 ,  C04B35/58 ,  C04B35/628 ,  C04B35/80 ,  C23C16/32 ,  C23C16/46 ,  C23C16/48 ,  F01D5/00 ,  C04B38/00 ,  B22F5/009 ,  B22F5/04 ,  B33Y80/00 ,  C04B2111/00905 ,  C04B2235/5244 ,  C04B2235/5252 ,  C04B2235/5264 ,  C04B2235/6026 ,  C04B2235/614 ,  C04B35/62863 ,  C04B35/62868 ,  C04B35/62873 ,  C04B35/62884 ,  C04B35/78 ,  C04B38/0029 ,  C23C16/325 ,  C23C16/4418 ,  C23C16/483 ,  F01D5/147 ,  F01D5/28 ,  F01D5/282 ,  F01D5/284 ,  F05D2230/22 ,  F05D2230/234 ,  F05D2230/31 ,  F05D2230/314 ,  F05D2250/28 ,  F05D2250/313 ,  F05D2250/314 ,  F05D2300/2112 ,  F05D2300/224 ,  F05D2300/2261 ,  F05D2300/2282 ,  F05D2300/6033

Abstract: La présente invention concerne un procédé de fabrication d'une structure par technique de fabrication additive mettant en œuvre un dépôt chimique en phase vapeur assisté par rayonnement énergétique focalisé, comprenant la formation d'un renfort qui comprend une pluralité d'éléments de renfort interconnectés en céramique ou en carbone qui définissent entre eux un volume interstitiel ayant une forme tortueuse le long dudit axe de dépôt.

公开(公告)号：WO2022123080A2

公开(公告)日：2022-06-16

申请号：PCT/EP2021/085493

申请日：2021-12-13

Applicant: ZADIENT TECHNOLOGIES SAS

Inventor： CRÖSSMANN, Ivo ,  SCHAAFF, Friedrich ,  TIEFEL, Hilmar Richard ,  CERAN, Kagan

IPC: C30B35/00 ,  C30B29/36 ,  C30B23/02 ,  C30B23/00 ,  C30B25/08 ,  C30B25/14 ,  C30B25/18 ,  C23C16/32 ,  C01B32/956 ,  C23C16/325 ,  C23C16/4404 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/46

Abstract: The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably comprises at least the following steps: Introducing at least a first source gas into a process chamber, said first source gas comprising Si; introducing at least one second source gas into the process chamber, the second source gas comprising C; electrically energizing at least one separator element disposed in the process chamber to heat the separator element; setting a deposition rate of more than 200µm/h, wherein a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and wherein the surface of the deposition element is heated to a temperature in the range between 1300°C and 1800°C.

公开(公告)号：WO2022049063A2

公开(公告)日：2022-03-10

申请号：PCT/EP2021/074000

申请日：2021-08-31

Applicant: AIXTRON SE

Inventor： HENS, Philip

IPC: C23C16/32 ,  C23C16/455 ,  C23C16/458 ,  C23C16/48 ,  C30B25/10 ,  C30B25/12 ,  H01L21/67 ,  H01L21/687 ,  C23C16/325 ,  C23C16/45508 ,  C23C16/4581 ,  C23C16/4584 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/483 ,  H01L21/67098 ,  H01L21/67109 ,  H01L21/68764 ,  H01L21/68771

Abstract: Die Erfindung betrifft einen CVD-Reaktor mit einem in einem Reaktorgehäuse angeordneten Suszeptor (2), der einen Boden einer Prozesskammer (1) bildet, einem Gaseinlassorgan (3), welches mindestens einen Gaseinlassbereich (4, 4') aufweist, mit einer unterhalb des Suszeptors (2) angeordneten Heizeinrichtung (6) zur Erzeugung eines Temperaturunterschiedes zwischen dem Grundkörper (7) und einer Prozesskammerdecke (15), mit mehreren vom Gaseinlassorgan (3) in einer Strömungsrichtung beabstandeten Substratträgern (12), jeweils zur Aufnahme von zu beschichtenden Substraten (14) und mit mehreren zwischen dem Gaseinlassorgan (3) und den Substratträgern (12) angeordneten Vorlaufzonenplatten (10), wobei eine Vorlaufzonentemperatur jeweils der zur Prozesskammer (1) weisenden Oberfläche der Vorlaufzonenplatte (10) durch die Auswahl oder Einstellung jeweils eines Wärmeübertragungsmittels (11) einstellbar sind. Zur Individualisierung der Vorlaufzonentemperatur können die Vorlaufzonenplatten (10) gegen andere Vorlaufzonenplatten (10) mit anderen Wärmeübertragungseigenschaften ausgetauscht werden.

公开(公告)号：WO2022123083A2

公开(公告)日：2022-06-16

申请号：PCT/EP2021/085512

申请日：2021-12-13

Applicant: ZADIENT TECHNOLOGIES SAS

Inventor： CRÖSSMANN, Ivo ,  SCHAAFF, Friedrich ,  TIEFEL, Hilmar Richard ,  CERAN, Kagan

IPC: C30B35/00 ,  C30B29/36 ,  C30B23/02 ,  C30B23/00 ,  C30B25/08 ,  C30B25/14 ,  C30B25/18 ,  C23C16/32 ,  B01D53/00 ,  C23C16/44 ,  C01B32/956 ,  C23C16/325 ,  C23C16/4404 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/46

Abstract: The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably comprises at least the following steps: Introducing at least a first source gas into a process chamber, said first source gas comprising Si, introducing at least one second source gas into the process chamber, the second source gas comprising C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200µm/h, wherein a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and wherein the surface of the deposition element is heated to a temperature in the range between 1300°C and 1800°C.

公开(公告)号：WO2022029251A1

公开(公告)日：2022-02-10

申请号：PCT/EP2021/071918

申请日：2021-08-05

Applicant: SGL CARBON SE

Inventor： MILITZER, Christian ,  WIJAYAWARDHANA, Charles ,  FORSBERG, Urban ,  PEDERSEN, Henrik

IPC: C23C16/32 ,  C04B41/50 ,  C01B32/21 ,  C01B32/914 ,  C01B32/956 ,  C01B32/963 ,  C04B41/009 ,  C04B41/526 ,  C04B41/89 ,  C23C16/325

Abstract: The invention relates to a refractory carbide multilayer (10) comprising a first layer (11), a second layer (12) and a third layer (13), wherein the first layer (11) has an average thickness of at least 25 nm and contains at least one refractory carbide, the second layer (12) has an average thickness of at least 25 nm and contains at least one refractory carbide, the third layer (13) has an average thickness of at least 25 nm and contains at least one refractory carbide, and the first layer (11) has a larger mean linear intercept section grain size than the second layer (12).

公开(公告)号：WO2022005728A1

公开(公告)日：2022-01-06

申请号：PCT/US2021/037177

申请日：2021-06-14

Applicant: APPLIED MATERIALS, INC.

Inventor： XIE, Bo ,  YIM, Kang S. ,  LIU, Yijun ,  XIA, Li-Qun ,  XIONG, Ruitong

IPC: C23C16/30 ,  C23C16/32 ,  C23C16/505 ,  H01L21/02 ,  C23C16/325 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274

Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-oxygen-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency less than 15 MHz (e.g., 13.56 MHz). The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.5 and a hardness greater than about 3 Gpa.