Invention Application
- Patent Title: III-NITRIDE BASED DEVICES GROWN ON A THIN TEMPLATE ON THERMALLY DECOMPOSED MATERIAL
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Application No.: PCT/US2022/028264Application Date: 2022-05-09
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Publication No.: WO2022240716A2Publication Date: 2022-11-17
- Inventor: CHAN, Philip , DENBAARS, Steven P. , NAKAMURA, Shuji
- Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Applicant Address: 1111 Franklin Street
- Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee Address: 1111 Franklin Street
- Agency: GATES, George H.
- Priority: US63/186,749 2021-05-10
- Main IPC: H01L21/205
- IPC: H01L21/205 ; C30B25/10 ; H01L21/02 ; H01L33/04 ; H01L33/12 ; H01L21/02381 ; H01L21/0242 ; H01L21/02458 ; H01L21/02505 ; H01L21/02507 ; H01L21/0254 ; H01L21/0262 ; H01L21/02658 ; H01L21/7806 ; H01L33/007 ; H01S2301/173 ; H01S5/0216 ; H01S5/0217 ; H01S5/04253 ; H01S5/2068 ; H01S5/22 ; H01S5/3063 ; H01S5/3213 ; H01S5/34333
Abstract:
A III-nitride based device is fabricated having an in-plane lattice constant or strain that is more than 30% biaxially relaxed, by creating a III-nitride based decomposition stop layer on or above a III-nitride based decomposition layer, wherein a temperature is increased to decompose the III-nitride based decomposition layer; and growing a III-nitride based device structure on or above the III-nitride based decomposition stop layer. The III-nitride based device structure includes at least one of an n-type layer, active layer, and p-type layer, and at least one of the n-type layer, active layer and p-type layer has an in-plane lattice constant or strain that is preferably more than 30% biaxially relaxed, more preferably 50% or more biaxially relaxed, and most preferably at least 70% biaxially relaxed.
Information query
IPC分类:
