公开(公告)号：WO2022240716A2

公开(公告)日：2022-11-17

申请号：PCT/US2022/028264

申请日：2022-05-09

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： CHAN, Philip ,  DENBAARS, Steven P. ,  NAKAMURA, Shuji

IPC: H01L21/205 ,  C30B25/10 ,  H01L21/02 ,  H01L33/04 ,  H01L33/12 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/7806 ,  H01L33/007 ,  H01S2301/173 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/04253 ,  H01S5/2068 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3213 ,  H01S5/34333

Abstract: A III-nitride based device is fabricated having an in-plane lattice constant or strain that is more than 30% biaxially relaxed, by creating a III-nitride based decomposition stop layer on or above a III-nitride based decomposition layer, wherein a temperature is increased to decompose the III-nitride based decomposition layer; and growing a III-nitride based device structure on or above the III-nitride based decomposition stop layer. The III-nitride based device structure includes at least one of an n-type layer, active layer, and p-type layer, and at least one of the n-type layer, active layer and p-type layer has an in-plane lattice constant or strain that is preferably more than 30% biaxially relaxed, more preferably 50% or more biaxially relaxed, and most preferably at least 70% biaxially relaxed.