A memory array comprising strings of memory cells comprises laterally- spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers above a conductor tier. Strings of memory cells comprise channel-material strings that extend through the insulative tiers and the conductive tiers. The channel-material strings directly electrically couple with conductor material of the conductor tier by conducting material that is in a lowest of the conductive tiers and that is directly against multiple of the channel-material strings. The channel-material strings in the laterally-spaced memory blocks comprise part of a memory plane. A wall in the lowest conductive tier is aside the conducting material. The wall is in a region that is edge-of-plane relative to the memory plane. The edge-of-plane region comprises a TAV region. The wall is horizontally-elongated relative to an edge of the TAV region that is in the edge-of-plane region. Other memory arrays and methods are disclosed.