摘要:
Machining of a hard, brittle and difficultly-machinable workpiece (2) by a grinding wheel (12) made of superabrasive grains. The grinding wheel (12) is rotated at a peripheral speed of 1000 to 5500 m/min, and the grinding wheel (12) and the workpieces (2) are moved relative to each other in the machining direction at a feed speed of at least 30 mm/s.
摘要:
A method and an apparatus for grinding the surface of a semiconductor wafer by moving a holding table (12) and a grinding wheel 4 A; 4 B; 4 C) relative to each other in a predetermined direction substantially parallel to the surface of the semiconductor wafer (W) held onto the holding table (12) to cause the grinding wheel (4 A; 4 B; 4 C) which is rotated to act on the surface of the semiconductor wafer (W) held onto the holding table (12). The semiconductor wafer (W) is placed on the holding table with its angular position being regulated so as to direct its crystal orientation in a predetermined direction with respect to the holding table (12), and thus the grinding direction of the surface of the semiconductor wafer (W) by the grinding wheel (4 A; 4 B; 4C) is set in a predetermined relationship to the crystal orientation of the semiconductor wafer. At the periphery of the semiconductor wafer (W) is formed a deformed portion (52, 54) arranged at a predetermined angular position with respect to its crystal orientation, and the holding table has a vacuum suction area made of a porous material and shaped substantially correspondingly to the shape of the semiconductor wafer.
摘要:
A grinding machine for surface grinding thin plate-like workpieces, particularly semiconductor wafers (13) comprises a rotating table (11) provided with at least a workpiece holder (12) on which a workpiece (13) to be ground is supported and a plurality of grinding wheels (14) having different degrees of coarseness ranging from coarse to fine. The wheels (14) are arranged around and above the table (11) so that, as the table (11) rotates, the surface of the workpiece (13) is ground successively by the grinding wheels (14) with the coarsest grinding wheel (14-1) grinding the surface initially, followed by the finer wheel (14-2) and finishing with the finest wheel (14-3). This enables the required quantity of material to be removed from the surface of the workpiece (13) whilst, at the same time enables the final surface of the workpiece (13) to be finished to a high degree of accuracy during a single rotation of the table (11).
摘要:
@ A dicing machine for cutting a semiconductor wafer (W) along cutting lines arranged in a lattice pattern. The dicing machine comprises a cutting station (2), at least one alignment station (4A, 4B), a cutting means (8) disposed in the cutting station, a detecting means (10A, 108) disposed in the alignment station for detecting the cutting lines of the water (W), and a wafer transferring means (6). The wafer transferring means includes two wafer supporting means (50A, 5;B) and the dicing machine is capable of positioning one of the two wafer supporting means in the alignment station and performing alignment of a semiconductor wafer (W) supported with said one of the wafer supporting means while positioning the other of the wafer supporting means in the cutting station and cutting a semiconductor wafer supported with said the other of the supporting means by the cutting means. The cutting means includes two cutting blades (158A, 158B) and a cutting blade interval setting-up means (122) for setting up the interval of these cutting blades.