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    Tunnel effect transistors based on elongate monocrystalline nanostructures having a heterostructure
    6.
    发明公开
    Tunnel effect transistors based on elongate monocrystalline nanostructures having a heterostructure 有权
    Tun ur ur ur ur ur ur ur ur ur ur ur ur ur ur ur ur ur ur ur ur ur ur ur ur

    公开(公告)号：EP1901355A1

    公开(公告)日：2008-03-19

    申请号：EP07075809.9

    申请日：2007-09-17

    申请人： Interuniversitair Microelektronica Centrum ,  K.U. Leuven Research and Development

    发明人： Verhulst, Anne S. ,  Vandenberghe, William G.

    IPC分类号： H01L29/423 ,  H01L29/772 ,  H01L29/78 ,  H01L29/06

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/165 ,  H01L29/7391

    摘要： Tunnel field-effect transistors (TFETs) are regarded as successors of metal-oxide semiconductor field-effect transistors (MOSFETs), but silicon-based TFETs typically suffer from low on-currents, a drawback related to the large resistance of the tunnel barrier. To achieve higher on-currents an elongate monocrystalline nanostructure-based TFET with a germanium (Ge) tunnel barrier in an otherwise silicon (Si) channel is used. An elongate monocrystalline nanostructure is introduced such that the lattice mismatch between silicon and germanium does not result in a highly defective interface. A dynamic power reduction as well as a static power reduction can result, compared to conventional MOSFET configurations. Multiple layers of logic can therefore be envisioned with these elongate monocrystalline nanostructure Si/Ge TFETs resulting in ultra-high on-chip transistor densities.

    摘要翻译： 隧道场效应晶体管（TFET）被认为是金属氧化物半导体场效应晶体管（MOSFET）的后继者，但是硅基TFET通常具有低导通电流，这是与隧道势垒的大电阻相关的缺点。 为了实现更高的导通电流，使用在另外的硅（Si）通道中具有锗（Ge）隧道势垒的细长单晶纳米结构的TFET。 引入细长单晶纳米结构，使得硅和锗之间的晶格失配不会导致高度缺陷的界面。 与常规MOSFET配置相比，可以实现动态功耗降低和静态功耗降低。 因此，可以用这些细长单晶纳米结构Si / Ge TFET来设想多层逻辑，从而产生超高的片上晶体管密度。

    ASYMMETRIC INCREMENTAL SHEET FORMING SYSTEM
    7.
    发明公开
    ASYMMETRIC INCREMENTAL SHEET FORMING SYSTEM 有权
    AISF系统（AISF - 非对称增量表）

    公开(公告)号：EP1899089A2

    公开(公告)日：2008-03-19

    申请号：EP06741294.0

    申请日：2006-04-21

    申请人： K.U. Leuven Research and Development

    发明人： CALLEBAUT, Bart ,  DUFLOU, Joost ,  VERBERT, Johan

    IPC分类号： B21D22/18

    CPC分类号： B21D31/005

    摘要： The present invention relates, in general, to sheet material forming technology and the forming of structures there from. The invention relates to incremental forming of sheet material (1) with localised heating (5) and more particularly to a system and method for incrementally forming a sheet blank (1) that is at the same time heated by a dynamically moving heating source (5). This dynamic and localised heating locally changes the mechanical properties of the sheet material (1), thus facilitating the forming process.

    摘要翻译： 本发明一般涉及片材成型技术及其结构的形成。 本发明涉及具有局部加热（5）的片状材料（1）的增量成型，更具体地涉及用于逐渐形成板坯（1）的系统和方法，该系统和方法同时由动态移动的加热源（5 ）。 这种动态和局部加热局部地改变了片材（1）的机械性能，从而有助于成型过程。