专利检索 ap:("Agilent Technologies, Inc. (a Delaware corporation)") AND inv:"Lin, Chao-Kun" 第 1 页

1.

发明公开
Intracavity contacted long wavelength VCSELs with buried antimony layers 审中-公开
标题翻译：帧内联系了长波长的VCSEL与掩埋层锑

公开(公告)号：EP1246328A2

公开(公告)日：2002-10-02

申请号：EP02000400.8

申请日：2002-01-07

申请人： Agilent Technologies, Inc. (a Delaware corporation)

发明人： Lin, Chao-Kun , Corzine, Scott W. , Tan, Michael R. T. , Houng, Yu-Min

IPC分类号： H01S5/183

CPC分类号： H01S5/1833 , B82Y20/00 , H01S5/0421 , H01S5/18311 , H01S5/18341 , H01S5/18358 , H01S5/34306

摘要： A vertical cavity surface-emitting laser (400, 500), and method of fabricating such a laser, for use in an optical communication system (100) including an optical cavity (223, 323) arranged between a pair of distributed Bragg reflectors (402/404, 502/504), an active region (217) in the optical cavity, and an oxidized current confinement layer (215, 315) arranged on one side of the active layer. The current confinement layer includes a component, such as antimony, that is segregated into a conductive layer on one side (221, 321) of the current confinement layer during oxidation.