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    HALBLEITERLASER
    2.
    发明公开
    HALBLEITERLASER 审中-公开

    公开(公告)号：EP3357133A1

    公开(公告)日：2018-08-08

    申请号：EP16785104.7

    申请日：2016-09-27

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： GERHARD, Sven ,  LELL, Alfred ,  VIERHEILIG, Clemens ,  LÖFFLER, Andreas ,  EICHLER, Christoph

    IPC: H01S5/042 ,  H01S5/16 ,  H01S5/32 ,  H01S5/028 ,  H01S5/323

    CPC classification number: H01S5/168 ,  H01S5/0287 ,  H01S5/0421 ,  H01S5/16 ,  H01S5/162 ,  H01S5/166 ,  H01S5/3211 ,  H01S5/3214 ,  H01S5/32341 ,  H01S2301/176

    Abstract: The invention relates to a semiconductor laser (1) comprising a semiconductor layer sequence (2) with an n-type n-region (21), a p-type p-region (23) and an active zone (22) lying between the two for the purpose of generating laser radiation. A p-contact layer (3) that is permeable to the laser radiation and consists of a transparent conductive oxide is located directly on the p-region (23) for the purpose of current input. An electrically-conductive metallic p-contact structure (4) is applied directly to the p-contact layer (3). The p-contact layer (3) is one part of a cover layer, and therefore the laser radiation penetrates as intended into the p-contact layer (3) during operation of the semi-conductor laser (1). Two facets (25) of the semiconductor layer sequence (2) form resonator end surfaces for the laser radiation. Current input into the p-region (23) is inhibited in at least one current protection region (5) directly on at least one of the facets (25). Said current protection region has, in the direction running perpendicularly to the associated facets (25), an extension of at least 0.5 µm and at most 100 µm, and additionally of at least 20% of a resonator length for the laser radiation.

    NITRIDE SEMICONDUCTOR DEVICE AND QUANTUM CASCADE LASER USING THE SAME
    5.
    发明公开
    NITRIDE SEMICONDUCTOR DEVICE AND QUANTUM CASCADE LASER USING THE SAME 审中-公开
    氮化物半导体器件和量子级联激光器

    公开(公告)号：EP3193378A1

    公开(公告)日：2017-07-19

    申请号：EP16199936.2

    申请日：2016-11-22

    Applicant: Sharp Kabushiki Kaisha ,  The University of Tokyo

    Inventor： KOTANI, Teruhisa ,  ARAKAWA, Yasuhiko

    IPC: H01L33/16 ,  H01L33/32 ,  H01S5/323

    CPC classification number: H01S5/3401 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0421 ,  H01S5/305 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3215 ,  H01S5/3218 ,  H01S5/3407 ,  H01S5/3422 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2302/02

    Abstract: A nitride semiconductor device includes a GaN substrate (11) in which an angle between a principal surface and an m-plane of GaN is -5° or more and +5° or less, a first intermediate layer (101) disposed on the principal surface of the substrate (11) and made of Al z Ga (1-z) N (0 ≤ z ≤ 1), and a second intermediate layer (102) disposed on a principal surface of the first intermediate layer (101), having an Al content different from that of the first intermediate layer (101), and made of Al x1 In y1 Ga (1-x1-y1) (0 ≤ x1 ≤ 1, 0 ≤ y1 ≤ 1). A quantum cascade laser (10) includes the nitride semiconductor device.

    Abstract translation: 本发明提供一种氮化物半导体装置，其特征在于，具备GaN基板（11），该GaN基板（11）的GaN的主面与m面的角度为-5°以上且+ 5°以下，第一中间层（101） （1）的表面由AlzGa（1-z）N（0≤z≤1）制成，第二中间层（102）设置在第一中间层（101）的主表面上，具有Al 含量不同于第一中间层（101）的含量，并由Al x1 In y1 Ga（1-x1-y1）（0≤x1≤1,0≤y1≤1）制成。 量子级联激光器（10）包括氮化物半导体器件。

    SEMICONDUCTOR LASER ELEMENT
    7.
    发明公开
    SEMICONDUCTOR LASER ELEMENT 审中-公开
    HALBLEITERLASERELEMENT

    公开(公告)号：EP3016219A1

    公开(公告)日：2016-05-04

    申请号：EP15191797.8

    申请日：2015-10-28

    Applicant: Nichia Corporation

    Inventor： HIRAO, Tsuyoshi

    IPC: H01S5/042 ,  H01S5/16 ,  H01S5/32 ,  H01S5/343 ,  H01S5/40 ,  H01S5/022 ,  H01S5/028 ,  H01S5/20

    CPC classification number: H01S5/0421 ,  H01S5/0224 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/168 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/4018 ,  H01S2301/176

    Abstract: A semiconductor laser element includes: a semiconductor stack with a ridge, the semiconductor stack having an emission surface and a reflection surface; a first electrode layer extending in the lengthwise direction and disposed on the ridge in contact with the semiconductor stack; a current injection prevention layer covering at least a part of an upper surface from side surfaces of the first electrode layer, and being in contact with the first electrode layer at 18 to 80% of a contact surface area between the first electrode layer and the semiconductor stack; and a second electrode layer disposed on the current injection prevention layer, and being in contact with a part of the first electrode layer, edges of the second electrode layer being disposed closer to the emission surface and the reflection surface than edges of the first electrode layer, respectively..

    Abstract translation: 半导体激光元件包括：具有脊的半导体叠层，所述半导体叠层具有发射表面和反射表面; 沿长度方向延伸并设置在与半导体叠层接触的脊上的第一电极层; 电流注入防止层，其覆盖从第一电极层的侧表面的上表面的至少一部分，并且与第一电极层接触的第一电极层和半导体之间的接触表面积的18至80％ 栈; 以及设置在电流注入防止层上并与第一电极层的一部分接触的第二电极层，第二电极层的边缘比第一电极层的边缘更靠近发射表面和反射表面设置 ， 分别..

    Surface-Emitting Laser Element and Atomic Oscillator
    9.
    发明公开
    Surface-Emitting Laser Element and Atomic Oscillator 审中-公开
    OberflächenemittierendesLaserelement und Atomzzillator

    公开(公告)号：EP2808958A2

    公开(公告)日：2014-12-03

    申请号：EP14170377.7

    申请日：2014-05-28

    Applicant: Ricoh Company Ltd.

    Inventor： Suzuki, Ryoichiro ,  Sato, Shunichi

    IPC: H01S5/183 ,  H01S5/40 ,  H01S5/42 ,  G04F5/14 ,  H01S5/026 ,  H01S5/343

    CPC classification number: H01S5/423 ,  G04F5/145 ,  H01S5/026 ,  H01S5/0421 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18344 ,  H01S5/18347 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/187 ,  H01S5/2086 ,  H01S5/3013 ,  H01S5/323 ,  H01S5/34313 ,  H01S5/34373 ,  H01S5/4087 ,  H01S2301/166 ,  H01S2301/176 ,  H03L7/26

    Abstract: A surface emitting laser element includes plural surface emitting lasers provided on a substrate. Each of the plural surface emitting lasers includes a first reflection mirror provided on the substrate; an active layer provided on the first reflection mirror; a wavelength adjustment region provided on the active layer; and a second reflection mirror provided on the wavelength adjustment region. The wavelength adjustment region includes a phase adjustment layer and a wavelength adjustment layer provided on the phase adjustment layer. A thickness of the wavelength adjustment region is approximately an odd multiple of a wavelength of emitted light divided by four. A thickness of the phase adjustment layer is approximately an even multiple of the wavelength of the emitted light divided by four. A thickness of the wavelength adjustment layer is different from a thickness of a wavelength adjustment layer of at least one of the other surface emitting lasers.

    Abstract translation: 表面发射激光元件包括设置在基板上的多个表面发射激光器。 多个表面发射激光器中的每一个包括设置在基板上的第一反射镜; 设置在所述第一反射镜上的有源层; 设置在有源层上的波长调整区域; 以及设置在波长调整区域上的第二反射镜。 波长调整区域包括设置在相位调整层上的相位调整层和波长调整层。 波长调整区域的厚度大约是发射光的波长除以4的奇数倍。 相位调整层的厚度大致是发射光的波长除以4的偶数倍。 波长调整层的厚度与其他表面发射激光器中的至少一个的波长调节层的厚度不同。

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