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    ATOMIC OSCILLATOR
    4.
    发明授权
    ATOMIC OSCILLATOR 有权

    公开(公告)号：EP3171232B1

    公开(公告)日：2018-10-24

    申请号：EP16195500.0

    申请日：2016-10-25

    申请人： Seiko Epson Corporation

    发明人： Nishida, Tetsuo

    IPC分类号： G04F5/14

    CPC分类号： H03L7/26 ,  G04F5/145 ,  H01L31/16 ,  H01L33/40 ,  H01L33/60 ,  H01L33/64 ,  H01S5/00 ,  H01S5/02461 ,  H01S5/0425 ,  H01S5/18302 ,  H01S5/18311 ,  H01S5/343 ,  H01S2301/176

    摘要： An atomic oscillator includes a gas cell having alkali metal atoms sealed therein; a light source that irradiates the gas cell with light; and a light detecting unit that detects the quantity of light transmitted through the gas cell. The light source includes an optical oscillation layer having a first reflective layer, an active layer, and a second reflective layer laminated therein in this order, an electrical field absorption layer having a first semiconductor layer, a quantum well layer, and a second semiconductor layer laminated therein in this order, and a heat diffusion layer that is disposed between the optical oscillation layer and the electrical field absorption layer and has a higher thermal conductivity than that of the second reflective layer.

    Surface-emitting semiconductor laser
    7.
    发明授权
    Surface-emitting semiconductor laser 有权
    表面发射半导体激光器

    公开(公告)号：EP1480303B1

    公开(公告)日：2017-07-05

    申请号：EP04011689.9

    申请日：2004-05-17

    申请人： Sony Corporation

    发明人： Watanabe, Yoshiaki ,  Narui, Hironobu ,  Kuromizu, Yuichi ,  Yamauchi, Yoshinori ,  Tanaka, Yoshiyuki

    IPC分类号： H01S5/183

    CPC分类号： G02B6/4296 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18388 ,  H01S5/18394 ,  H01S5/2214 ,  H01S5/32308 ,  H01S2301/18 ,  H01S2301/203

    摘要： A surface light emitting semiconductor laser element (10), comprises a substrate (12), a lower reflector (14) including a semiconductor multi-layer disposed on the substrate, an active layer (18) disposed on the lower reflector, an upper reflector (22) including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer (24) having a first opening (30) for exposing the upper reflector and extending over the upper reflector, and a metal film (36) having a second opening (38) for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.

    摘要翻译： 一种表面发光半导体激光器元件（10），包括衬底（12），包括设置在衬底上的半导体多层的下反射器（14），设置在下反射器上的有源层（18），上反射器 （22），其包括设置在所述有源层上的半导体多层;化合物半导体层（24），其具有用于暴露所述上反射体并且在所述上反射体上方延伸的第一开口（30）;以及金属膜（36），其具有 第二开口（38），用于暴露设置在所述第一开口内部并且在所述化合物半导体层上方延伸的所述上反射器，其中所述金属膜和所述化合物半导体层构成复折射率分布结构，其中复折射率从所述中心 第二个开口朝外。 还提供了以单峰横向模式发射激光的方法。