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1.发明公开A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION HAVING A pH VALUE OF 3.0 TO 5.5 审中-公开用于生产半导体部件WITH化学 - 机械抛光，基础锗和/或SI1-xGex材料在CMP组合物与3.0至5.5的pH THE PRESENCE
公开(公告)号：EP2741892A4
公开(公告)日：2015-03-18
申请号：EP12819369
申请日：2012-07-30
Applicant: BASF SE
Inventor： NOLLER BASTIAN MARTEN , DRESCHER BETTINA , GILLOT CHRISTOPHE , LI YUZHOU
IPC: H01L21/306 , B24B37/04 , C09G1/02 , C09K3/14
CPC classification number: H01L21/30625 , B24B37/044 , C09G1/02 , C09K3/1463 , H01L21/02024
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2.发明公开
公开(公告)号：EP2742103A4
公开(公告)日：2015-03-25
申请号：EP12819882
申请日：2012-07-30
Applicant: BASF SE
Inventor： NOLLER BASTIAN MARTEN , DRESCHER BETTINA , GILLOT CHRISTOPHE , LI YUZHUO , GAO NING
IPC: H01L21/306 , C09G1/02 , C09K3/14
CPC classification number: H01L21/30625 , C09G1/02 , C09K3/1463 , C23F3/00 , H01L21/02024 , H01L21/31053 , H01L21/3212
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公开(公告)号：EP2625237A4
公开(公告)日：2014-03-19
申请号：EP11830273
申请日：2011-10-04
Applicant: BASF SE
Inventor： DRESCHER BETTINA , NOLLER BASTIAN MARTEN , SCHMITT CHRISTINE , SUGIHARTO ALBERT BUDIMAN , LI YUZHUO
IPC: C09G1/02 , C09K3/14 , H01L21/306 , H01L21/321
CPC classification number: C09K13/04 , C09G1/02 , C09K3/1409 , C09K3/1463 , C09K13/06 , H01L21/30625 , H01L21/3212
Abstract: A chemical mechanical polishing (CMP) composition Abstract Use of a chemical mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a mixture thereof, (B) a heteropolyacid or a salt thereof, (C) a salt comprising chloride, fluoride, bromide, or a mixture thereof as anion, and (D) an aqueous medium, for polishing a substrate comprising a self-passivating metal, germanium, nickel phosphorous (NiP), or a mixture thereof.
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