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1.发明公开
公开(公告)号：EP2742103A4
公开(公告)日：2015-03-25
申请号：EP12819882
申请日：2012-07-30
Applicant: BASF SE
Inventor： NOLLER BASTIAN MARTEN , DRESCHER BETTINA , GILLOT CHRISTOPHE , LI YUZHUO , GAO NING
IPC: H01L21/306 , C09G1/02 , C09K3/14
CPC classification number: H01L21/30625 , C09G1/02 , C09K3/1463 , C23F3/00 , H01L21/02024 , H01L21/31053 , H01L21/3212
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2.发明公开A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING (CMP) OF III-V MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC NON-IONIC SURFACTANT 审中-公开PROCESS用于产生具有化学机械抛光（CMP）的III-V材料的存在CMP组合物的半导体元件与特定的，非离子表面活性
公开(公告)号：EP2852644A4
公开(公告)日：2016-04-06
申请号：EP13794728
申请日：2013-05-21
Applicant: BASF SE
Inventor： NOLLER BASTIAN MARTEN , GILLOT CHRISTOPHE , FRANZ DIANA , LI YUZHUO
IPC: H01L21/306 , C09G1/02
CPC classification number: C09G1/02 , B81C2201/0121 , B81C2201/0123 , B81C2201/0126 , H01L21/02024 , H01L21/302 , H01L21/304 , H01L21/30625 , H01L21/3212 , H01L21/461
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3.发明公开A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION HAVING A pH VALUE OF 3.0 TO 5.5 审中-公开用于生产半导体部件WITH化学 - 机械抛光，基础锗和/或SI1-xGex材料在CMP组合物与3.0至5.5的pH THE PRESENCE
公开(公告)号：EP2741892A4
公开(公告)日：2015-03-18
申请号：EP12819369
申请日：2012-07-30
Applicant: BASF SE
Inventor： NOLLER BASTIAN MARTEN , DRESCHER BETTINA , GILLOT CHRISTOPHE , LI YUZHOU
IPC: H01L21/306 , B24B37/04 , C09G1/02 , C09K3/14
CPC classification number: H01L21/30625 , B24B37/044 , C09G1/02 , C09K3/1463 , H01L21/02024
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