公开(公告)号：EP2688966A4

公开(公告)日：2014-11-12

申请号：EP12760432

申请日：2012-03-19

Applicant: BASF SE

Inventor： NOLLER BASTIAN ,  LAUTER MICHAEL ,  SUGIHARTO ALBERT BUDIMAN ,  LI YUZHUO ,  RUSHING KENNETH ,  FRANZ DIANA ,  BÖHN ROLAND ,  GAO NING

IPC: C09G1/02 ,  H01L21/321

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09G1/04 ,  C09K3/1463 ,  H01L21/30625

公开(公告)号：EP2625237A4

公开(公告)日：2014-03-19

申请号：EP11830273

申请日：2011-10-04

Applicant: BASF SE

Inventor： DRESCHER BETTINA ,  NOLLER BASTIAN MARTEN ,  SCHMITT CHRISTINE ,  SUGIHARTO ALBERT BUDIMAN ,  LI YUZHUO

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/306 ,  H01L21/321

CPC classification number: C09K13/04 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/3212

Abstract: A chemical mechanical polishing (CMP) composition Abstract Use of a chemical mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a mixture thereof, (B) a heteropolyacid or a salt thereof, (C) a salt comprising chloride, fluoride, bromide, or a mixture thereof as anion, and (D) an aqueous medium, for polishing a substrate comprising a self-passivating metal, germanium, nickel phosphorous (NiP), or a mixture thereof.