摘要:
The present application relates to an apparatus (200) for determining a position of at least one element (130, 540, 940) on a photolithographic mask (110), said apparatus comprising: (a) at least one scanning particle microscope (210) comprising a first reference object (240), wherein the first reference object (240) is disposed on the scanning particle microscope (210) in such a way that the scanning particle microscope (210) can be used to determine a relative position of the at least one element (130, 540, 940) on the photolithographic mask (110) relative to the first reference object (240); and (b) at least one distance measuring device (270), which is embodied to determine a distance between the first reference object (240) and a second reference object (250), wherein there is a relationship between the second reference object (250) and the photolithographic mask (110).
摘要:
The present application relates to a method for characterizing a shielding element (C) of a particle beam device (100) for shielding an electric field between a sample position and a particle beam source (101). The method comprises positioning a means for characterizing (S1, S2, S3) the shielding element on a side of the shielding element which is facing the sample position.
摘要:
The present application relates to an apparatus (200) for determining a position of at least one element (130, 540, 940) on a photolithographic mask (110), said apparatus comprising: (a) at least one scanning particle microscope (210) comprising a first reference object (240), wherein the first reference object (240) is disposed on the scanning particle microscope (210) in such a way that the scanning particle microscope (210) can be used to determine a relative position of the at least one element (130, 540, 940) on the photolithographic mask (110) relative to the first reference object (240); and (b) at least one distance measuring device (270), which is embodied to determine a distance between the first reference object (240) and a second reference object (250), wherein there is a relationship between the second reference object (250) and the photolithographic mask (110).
摘要:
Method for particle beam-induced processing of a defect (D, D') of a microlithographic photomask (100), including the steps of: a1) providing (S1) an image (300) of at least a portion of the photomask (100), b1) determining (S2) a geometric shape of a defect (D, D') in the image (300) as a repair shape (302, 302'), c1) subdividing (S3) the repair shape (302, 302') into a number of n pixels (304) in accordance with a first rasterization (306), d1) subdividing (S5) the repair shape into a number of m pixels (304') in accordance with a second rasterization (306'), the second rasterization (306') emerging from a subpixel displacement of the first rasterization (306), e1) providing (S4) an activating particle beam (202) and a process gas at each of the n pixels (304) of the repair shape (302, 302') in accordance with the first rasterization (306), and f1) providing (S6) the activating particle beam (202) and the process gas at each of the m pixels (304') of the repair shape (302, 302') in accordance with the second rasterization (306').
摘要:
Method for particle beam-induced processing of a defect (D, D') of a microlithographic photomask (100), including the steps of: a1) providing (S1) an image (300) of at least a portion of the photomask (100), b1) determining (S2) a geometric shape of a defect (D, D') in the image (300) as a repair shape (302, 302'), c1) subdividing (S3) the repair shape (302, 302') into a number of n pixels (304) in accordance with a first rasterization (306), d1) subdividing (S5) the repair shape into a number of m pixels (304') in accordance with a second rasterization (306'), the second rasterization (306') emerging from a subpixel displacement of the first rasterization (306), e1) providing (S4) an activating particle beam (202) and a process gas at each of the n pixels (304) of the repair shape (302, 302') in accordance with the first rasterization (306), and f1) providing (S6) the activating particle beam (202) and the process gas at each of the m pixels (304') of the repair shape (302, 302') in accordance with the second rasterization (306').