公开(公告)号：EP0747503B1

公开(公告)日：2003-10-29

申请号：EP96109191.5

申请日：1996-06-07

申请人： EBARA CORPORATION

发明人： Murakami, Takeshi ,  Takeuchi, Noriyuki ,  Shinozaki, Hiroyuki ,  Tsukamoto, Kiwamu ,  Fukunaga, Yukio ,  Hongo, Akihisa

IPC分类号： C23C16/44 ,  C30B25/14

CPC分类号： C23C16/45512 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/4557 ,  C30B25/14

公开(公告)号：EP0738788B1

公开(公告)日：2003-08-13

申请号：EP96106207.2

申请日：1996-04-19

申请人： EBARA CORPORATION

发明人： Takeuchi, Noriyuki ,  Murakami, Takeshi ,  Shinozaki, Hiroyuki ,  Tsukamoto, Kiwamu ,  Nakaniwa, Masaru ,  Matsuda, Naoki

IPC分类号： C23C16/44 ,  C23C16/46 ,  C23C16/52

CPC分类号： C23C16/4557 ,  C23C16/45565 ,  C23C16/52

公开(公告)号：EP0738788A2

公开(公告)日：1996-10-23

申请号：EP96106207.2

申请日：1996-04-19

申请人： EBARA CORPORATION

发明人： Takeuchi, Noriyuki ,  Murakami, Takeshi ,  Shinozaki, Hiroyuki ,  Tsukamoto, Kiwamu ,  Nakaniwa, Masaru ,  Matsuda, Naoki

IPC分类号： C23C16/44 ,  C23C16/46 ,  C23C16/52

CPC分类号： C23C16/4557 ,  C23C16/45565 ,  C23C16/52

摘要： A thin-film vapor deposition apparatus has a reaction casing defining a reaction chamber, a stage for supporting a substrate, the stage being disposed in the reaction chamber, and a shower head supported on the reaction casing in confronting relation to the stage, for discharging a material gas toward the substrate on the stage for depositing a thin film on the substrate. A plurality of flow path systems are disposed in various regions of the shower head and the reaction casing, for passing a heating medium to control the temperatures of the regions under the control of a temperature controller.

摘要翻译： 薄膜蒸镀装置具有限定反应室的反应壳体，支撑基板的台，设置在反应室中的台和与台相对地支撑在反应壳体上的喷头，用于排出 向衬底上的材料气体，用于在衬底上沉积薄膜。 多个流路系统设置在淋浴头和反应壳体的各个区域中，用于通过加热介质以控制温度控制器控制下的区域的温度。

公开(公告)号：EP0738788A3

公开(公告)日：1998-04-22

申请号：EP96106207.2

申请日：1996-04-19

申请人： EBARA CORPORATION

发明人： Takeuchi, Noriyuki ,  Murakami, Takeshi ,  Shinozaki, Hiroyuki ,  Tsukamoto, Kiwamu ,  Nakaniwa, Masaru ,  Matsuda, Naoki

IPC分类号： C23C16/44 ,  C23C16/46 ,  C23C16/52

CPC分类号： C23C16/4557 ,  C23C16/45565 ,  C23C16/52

摘要： A thin-film vapor deposition apparatus has a reaction casing defining a reaction chamber, a stage for supporting a substrate, the stage being disposed in the reaction chamber, and a shower head supported on the reaction casing in confronting relation to the stage, for discharging a material gas toward the substrate on the stage for depositing a thin film on the substrate. A plurality of flow path systems are disposed in various regions of the shower head and the reaction casing, for passing a heating medium to control the temperatures of the regions under the control of a temperature controller.

公开(公告)号：EP0747503A1

公开(公告)日：1996-12-11

申请号：EP96109191.5

申请日：1996-06-07

申请人： EBARA CORPORATION

发明人： Murakami, Takeshi ,  Takeuchi, Noriyuki ,  Shinozaki, Hiroyuki ,  Tsukamoto, Kiwamu ,  Fukunaga, Yukio ,  Hongo, Akihisa

IPC分类号： C23C16/44 ,  C30B25/14

CPC分类号： C23C16/45512 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/4557 ,  C30B25/14

摘要： A reactant gas ejector head for use in a thin-film vapor deposition apparatus includes at least two reactant gas inlet passages (24) for introducing reactant gases, a gas mixing chamber (26) for mixing reactant gases introduced from the reactant gas inlet passages, and a nozzle (27) disposed downstream of the gas mixing chamber for rectifying the mixed gases from the gas mixing chamber into a uniform flow and applying the uniform flow to a substrate.

摘要翻译： 用于薄膜气相沉积装置的反应气体喷射头包括至少两个用于引入反应气体的反应气体入口通道（24），用于混合从反应气体入口通道引入的反应气体的气体混合室（26） 以及设置在气体混合室下游的喷嘴（27），用于将来自气体混合室的混合气体整流成均匀的流动并将均匀的流体施加到基底。