摘要:
A substrate plating apparatus forms an interconnection layer on an interconnection region composed of a fine groove and/or a fine hole defined in a substrate. The substrate plating apparatus includes a plating unit for forming a plated layer on a surface of the substrate including the interconnection region, a chemical mechanical polishing unit for chemically mechanically polishing the substrate to remove the plated layer from the surface of the substrate leaving a portion of the plated layer in the interconnection region, a cleaning unit for cleaning the substrate after the plated layer is formed or the substrate is chemically mechanically polished, a drying unit for drying the substrate after the substrate is cleaned, and a substrate transfer unit for transferring the substrate to and from each of the first plating unit, the first chemical mechanical polishing unit, the cleaning unit, and the drying unit. The first plating unit, the first chemical mechanical polishing unit, the cleaning unit, the drying unit, and the substrate transfer unit being combined into a single unitary arrangement.
摘要:
Heat can be supplied effectively to a porous member of a vaporizer apparatus so that the vaporizing operation can be carried out smoothly and efficiently. The vaporizer apparatus comprises a vaporizer section (B) having a porous member (9) including a liquid receiving surface and a vapor discharge surface; a feed supply section (A) for supplying a liquid feed material to the liquid receiving surface of the porous member; a heating medium passage (P1) in thermal contact with the porous member; and a heating medium supply system for flowing a heating medium (L2) of a temperature higher than a vaporization temperature of the liquid feed material, through the heating medium passage.
摘要:
The present invention relates to a polishing apparatus for removing surface roughness produced at a peripheral portion of a substrate, or for removing a film formed on a peripheral portion of a substrate. The polishing apparatus includes a housing for forming a polishing chamber therein, a rotational table for holding and rotating a substrate, a polishing tape supply mechanism for supplying a polishing tape into the polishing chamber and taking up the polishing tape which has been supplied to the polishing chamber, a polishing head for pressing the polishing tape against a bevel portion of the substrate, a liquid supply for supplying a liquid to a front surface and a rear surface of the substrate, and a regulation mechanism for making an internal pressure of the polishing chamber being set to be lower than an external pressure of the polishing chamber.
摘要:
There are provided a method and apparatus for forming interconnects by embedding a metal such as copper (Cu) into recesses for interconnects formed on the surface of a substrate such as a semiconductor substrate. The method of the present invention includes the steps of: providing a substrate having fine recesses formed in the surface; subjecting the surface of the substrate to plating in a plating liquid; and subjecting the plated film formed on the surface of the substrate to electrolytic etching in an etching liquid.
摘要:
A reactant gas ejector head for use in a thin-film vapor deposition apparatus includes at least two reactant gas inlet passages (24) for introducing reactant gases, a gas mixing chamber (26) for mixing reactant gases introduced from the reactant gas inlet passages, and a nozzle (27) disposed downstream of the gas mixing chamber for rectifying the mixed gases from the gas mixing chamber into a uniform flow and applying the uniform flow to a substrate.
摘要:
A substrate such as a semiconductor wafer is plated to fill a metal such as copper (Cu) or the like in interconnection grooves defined in the substrate. An apparatus for plating such a substrate has a plating chamber for holding a plating solution, the plating chamber housing an anode that is immersible in the plating solution held by the plating chamber, a plating solution ejector pipe for producing an upward jet of plating solution from a plating solution supplied to the plating chamber from an external source, and a substrate holder for removably holding a substrate and positioning the substrate such that a surface to be plated of the substrate is held in contact with the jet of plating solution. The plating chamber has a plating solution outlet defined in a bottom thereof for discharging a portion of the supplied plating solution via through holes defined in the anode and/or around the anode out of the plating chamber.
摘要:
There is provided a method and apparatus for forming fine circuit interconnects that can form, by copper plating, copper interconnects in which movement of copper atoms is retarded or suppressed whereby electromigration is prevented. The method for forming fine circuit interconnects, comprising, providing a substrate for electronic circuit having fine circuit patterns which are covered with a barrier layer (4) and optionally a seed layer (5), forming a first plated film (6) on the surface of the substrate by copper alloy plating, and forming a second plated film (7) on the surface of the first plated film by copper plating.
摘要:
A substrate such as a semiconductor wafer is plated to fill a metal such as copper (Cu) or the like in interconnection grooves defined in the substrate. An apparatus for plating such a substrate has a plating chamber for holding a plating solution, the plating chamber housing an anode that is immersible in the plating solution held by the plating chamber, a plating solution ejector pipe for producing an upward jet of plating solution from a plating solution supplied to the plating chamber from an external source, and a substrate holder for removably holding a substrate and positioning the substrate such that a surface to be plated of the substrate is held in contact with the jet of plating solution. The plating chamber has a plating solution outlet defined in a bottom thereof for discharging a portion of the supplied plating solution via through holes defined in the anode and/or around the anode out of the plating chamber.
摘要:
Heat can be supplied effectively to a porous member of a vaporizer apparatus so that the vaporizing operation can be carried out smoothly and efficiently. The vaporizer apparatus comprises a vaporizer section (B) having a porous member (9) including a liquid receiving surface and a vapor discharge surface; a feed supply section (A) for supplying a liquid feed material to the liquid receiving surface of the porous member; a heating medium passage (P1) in thermal contact with the porous member; and a heating medium supply system for flowing a heating medium (L2) of a temperature higher than a vaporization temperature of the liquid feed material, through the heating medium passage.
摘要:
A vaporizer apparatus is disclosed which enables to efficiently vaporize a liquid material for the production of high dielectric thin film devices by allowing a sufficient dwell time for complete vaporization of the feed liquid, to prevent degradation of the feed gas after vaporization and to provide a stable supply of the vaporized feed gas to the substrate. The vaporizer apparatus comprises an outer member having a cylindrical inner surface, an inner member having a cylindrical outer surface opposing to the cylindrical inner surface of the outer member, and a feed material passage having a spiral configuration is formed on at least one of the cylindrical inner surface and the cylindrical outer surface. The feed material passage communicates with a feed liquid entry opening and a feed gas exit opening. A heating device is provided for heating at least one of the outer member and inner member.