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公开(公告)号：EP3588704A1
公开(公告)日：2020-01-01
申请号：EP18757376.1
申请日：2018-02-27
发明人： NODA, Susumu , TANAKA, Yoshinori , DE ZOYSA, Menaka , SONODA, Junichi , KOIZUMI, Tomoaki , EMOTO, Kei
摘要： A method for manufacturing a surface emitting laser made of a group-III nitride semiconductor by an MOVPE method according to the present invention comprises: (a) a step of growing a first cladding layer of a first conductive type on a substrate; (b) a step of growing a first optical guide layer of said first conductive type on said first cladding layer; (c) a step of forming holes having a two-dimensional periodicity in a plane parallel to said first optical guide layer, in said first optical guide layer by etching; (d) a step of supplying a gas containing a group-III material and a nitrogen source and performing growth to form recessed portions having a facet of a predetermined plane direction above openings of said holes, thereby closing the openings of said holes; and (e) a step of planarizing said recessed portions by mass transport, after said openings of said holes have been closed, wherein after said planarizing step has been performed, at least one of side surfaces of said hole is a {10-10} facet.
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公开(公告)号：EP4395088A1
公开(公告)日：2024-07-03
申请号：EP22878276.9
申请日：2022-09-08
发明人： NODA, Susumu , INOUE, Takuya , KOIZUMI, Tomoaki , EMOTO, Kei
IPC分类号： H01S5/11
CPC分类号： H01S5/11
摘要： A first semiconductor layer that is provided on a substrate, an active layer that is provided on the first semiconductor layer, a second semiconductor layer that is provided on the active layer and is of an opposite conductive type from the first semiconductor layer, an air-hole layer that is included in the first semiconductor layer and includes an air hole disposed with a two-dimensional periodicity in a plane parallel to the active layer, and a reflection layer that is provided on the second semiconductor layer and has a reflection surface, are included. A light emission surface is provided on a rear surface of the substrate, the air-hole layer has a diffraction surface that is a symmetrical center surface when light standing in the air-hole layer is diffracted with an electric field amplitude symmetrical in a direction orthogonal to the air-hole layer, and a separation distance between the diffraction surface and the reflection surface is provided such that a light intensity of combined light of first diffracted light diffracted from the diffraction surface to a side of the light emission surface and second diffracted light diffracted from the diffraction surface to a side of the reflection layer and reflected on the reflection surface is larger than a light intensity of the first diffracted light.
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3.发明公开
公开(公告)号：EP4105967A1
公开(公告)日：2022-12-21
申请号：EP21772301.4
申请日：2021-02-10
发明人： NODA, Susumu , INOUE, Takuya , KOIZUMI, Tomoaki , EMOTO, Kei
IPC分类号： H01L21/205 , H01S5/18
摘要： A surface-emitting laser element includes: a first guide layer including a photonic crystal layer that is formed on a c plane of a group-3 nitride semiconductor and includes air holes arranged with two-dimensional periodicity in a plane parallel to the photonic crystal layer, and an embedding layer that is formed on the photonic crystal layer and closes the air holes; an active layer formed on the first guide layer; and a second guide layer formed on the active layer, wherein an air hole set including at least a main air hole and a sub-air hole smaller in size than the main air hole is arranged at each square lattice point in the plane parallel to the photonic crystal layer, and wherein the main air hole has a regular-hexagonal prism shape, a long-hexagonal prism shape, or an elliptic cylindrical shape with a major axis parallel to a axis.
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公开(公告)号：EP4167404A1
公开(公告)日：2023-04-19
申请号：EP21841437.3
申请日：2021-07-01
发明人： NODA, Susumu , INOUE, Takuya , EMOTO, Kei , KOIZUMI, Tomoaki
IPC分类号： H01S5/18
摘要： A photonic-crystal surface-emitting laser element includes: a first semiconductor layer formed by embedding a photonic crystal layer that includes air holes arranged with two-dimensional periodicity in a formation region in a plane parallel to the photonic crystal layer; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a mesa portion with a mesa shape formed at a surface of the second semiconductor layer, wherein the mesa portion is located inside the formation region of the air holes when viewed in a direction perpendicular to the photonic crystal layer.
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5.发明公开
公开(公告)号：EP3840139A1
公开(公告)日：2021-06-23
申请号：EP20214140.4
申请日：2020-12-15
发明人： NODA, Susumu , KOIZUMI, Tomoaki , EMOTO, Kei
摘要： A method for manufacturing a GaN-based surface-emitting laser by an MOVPE includes: (a) growing a first cladding layer with a {0001} growth plane; (b) growing a guide layer on the first cladding layer; (c) forming holes in a surface of the guide layer by etching, the holes being two-dimensionally periodically arranged within a plane parallel to the guide layer; (d) etching the guide layer by using an etchant having selectivity to the {0001} plane and a {10-10} plane of the guide layer; (e) supplying a gas containing a nitrogen source to cause mass transport without supplying a group-III material gas, and then supplying the group-III material gas for growth, whereby a first embedding layer closing openings of the holes is formed to form a photonic crystal layer; and (f) growing an active layer and a second cladding layer in this order on the first embedding layer.
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公开(公告)号：EP4283804A1
公开(公告)日：2023-11-29
申请号：EP23174040.8
申请日：2023-05-17
发明人： NODA, Susumu , EMOTO, Kei , KOIZUMI, Tomoaki , KOTANI, Hiroshi
摘要： A method of manufacturing a surface-emitting laser, includes (a) forming a first semiconductor layer including a photonic-crystal (PC) layer, (b) growing, on the first semiconductor layer, an active layer and a second semiconductor layer, (c) performing spectrometry in which a thickness from a surface of the second semiconductor layer to a position where the spectrometry light is reflected by the PC layer is measured, (d) forming a translucent electrode having a thickness calculated based on an optical path length corresponding to the thickness obtained by the spectrometry on the second semiconductor layer, and (e) forming a reflection layer on the translucent electrode, in which the layer thickness of the translucent electrode is determined such that a light intensity of interference light of (i) direct diffracted light radiated from the PC layer and (ii) reflected diffracted light radiated from the PC layer and reflected by the reflection layer is larger than a light intensity of the direct diffracted light.
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