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公开(公告)号：EP4167404A1
公开(公告)日：2023-04-19
申请号：EP21841437.3
申请日：2021-07-01
发明人： NODA, Susumu , INOUE, Takuya , EMOTO, Kei , KOIZUMI, Tomoaki
IPC分类号： H01S5/18
摘要： A photonic-crystal surface-emitting laser element includes: a first semiconductor layer formed by embedding a photonic crystal layer that includes air holes arranged with two-dimensional periodicity in a formation region in a plane parallel to the photonic crystal layer; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a mesa portion with a mesa shape formed at a surface of the second semiconductor layer, wherein the mesa portion is located inside the formation region of the air holes when viewed in a direction perpendicular to the photonic crystal layer.
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公开(公告)号：EP4395088A1
公开(公告)日：2024-07-03
申请号：EP22878276.9
申请日：2022-09-08
发明人： NODA, Susumu , INOUE, Takuya , KOIZUMI, Tomoaki , EMOTO, Kei
IPC分类号： H01S5/11
CPC分类号： H01S5/11
摘要： A first semiconductor layer that is provided on a substrate, an active layer that is provided on the first semiconductor layer, a second semiconductor layer that is provided on the active layer and is of an opposite conductive type from the first semiconductor layer, an air-hole layer that is included in the first semiconductor layer and includes an air hole disposed with a two-dimensional periodicity in a plane parallel to the active layer, and a reflection layer that is provided on the second semiconductor layer and has a reflection surface, are included. A light emission surface is provided on a rear surface of the substrate, the air-hole layer has a diffraction surface that is a symmetrical center surface when light standing in the air-hole layer is diffracted with an electric field amplitude symmetrical in a direction orthogonal to the air-hole layer, and a separation distance between the diffraction surface and the reflection surface is provided such that a light intensity of combined light of first diffracted light diffracted from the diffraction surface to a side of the light emission surface and second diffracted light diffracted from the diffraction surface to a side of the reflection layer and reflected on the reflection surface is larger than a light intensity of the first diffracted light.
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3.发明公开
公开(公告)号：EP4105967A1
公开(公告)日：2022-12-21
申请号：EP21772301.4
申请日：2021-02-10
发明人： NODA, Susumu , INOUE, Takuya , KOIZUMI, Tomoaki , EMOTO, Kei
IPC分类号： H01L21/205 , H01S5/18
摘要： A surface-emitting laser element includes: a first guide layer including a photonic crystal layer that is formed on a c plane of a group-3 nitride semiconductor and includes air holes arranged with two-dimensional periodicity in a plane parallel to the photonic crystal layer, and an embedding layer that is formed on the photonic crystal layer and closes the air holes; an active layer formed on the first guide layer; and a second guide layer formed on the active layer, wherein an air hole set including at least a main air hole and a sub-air hole smaller in size than the main air hole is arranged at each square lattice point in the plane parallel to the photonic crystal layer, and wherein the main air hole has a regular-hexagonal prism shape, a long-hexagonal prism shape, or an elliptic cylindrical shape with a major axis parallel to a axis.
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公开(公告)号：EP4024630A1
公开(公告)日：2022-07-06
申请号：EP20857819.5
申请日：2020-08-04
申请人： Kyoto University
IPC分类号： H01S5/18
摘要： A two-dimensional photonic-crystal surface-emitting laser 10 includes an active layer 11, a two-dimensional photonic crystal (photonic crystal layer) 12, and electrodes (first electrode 191 and second electrode 192). The two-dimensional photonic crystal 12 contains a plate-shaped base material 121 arranged on one side of the active layer 11 and different refractive index portions 122 arranged at lattice points of a predetermined lattice in the base material 121 and having a refractive index different from that of the base material 121, a band edge frequency for each position in an electric current supply region 120, which is at least a part of the two-dimensional photonic crystal, is monotonically increased in one direction parallel to the base material 121. Such a two-dimensional photonic crystal 12 can be realized, for example, by a configuration that when the different refractive index portion 122 has a refractive index smaller than that of the base material 121, a filling factor, which is a ratio of a volume occupied by the different refractive index portion 122 in a unit lattice 123 constituting the lattice, is monotonically increased in the one direction.
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公开(公告)号：EP3930120A1
公开(公告)日：2021-12-29
申请号：EP20758933.4
申请日：2020-02-04
申请人： Kyoto University
IPC分类号： H01S5/18
摘要： A two-dimensional photonic-crystal surface-emitting laser 10 includes an active layer 11; and a photonic-crystal layer 12 including a two-dimensional photonic-crystal light-amplification portion 123 that is a first two-dimensional photonic-crystal region provided in a plate-shaped base body 121 disposed on one side of the active layer 11, and includes an amplification-portion photonic band gap 15 which is a photonic band gap formed between two photonic bands having a band edge at a predetermined point in a reciprocal lattice space, and a two-dimensional photonic-crystal light-reflection portion 125 that is a second two-dimensional photonic-crystal region provided around the two-dimensional photonic-crystal light-amplification portion 123, and includes a reflection-portion photonic band gap 16 which is a photonic band gap formed between two photonic bands having a band edge at the predetermined point of the reciprocal lattice space, wherein energy ranges of the amplification-portion photonic band gap 15 and the reflection-portion photonic band gap 16 partially overlap and are different.
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公开(公告)号：EP4311043A1
公开(公告)日：2024-01-24
申请号：EP22771148.8
申请日：2022-03-04
发明人： FUJIWARA, Naoki , KONO, Naoya , FURUYA, Akira , ITO, Yuki , NODA, Susumu , INOUE, Takuya , ISHIZAKI, Kenji
摘要： A photonic crystal surface-emitting laser includes a light emitting region from which light is emitted in a direction crossing an in-plane direction, and a current blocking region that is adjacent to the light emitting region in the in-plane direction and in which current is less likely to flow than in the light emitting region. The light emitting region and the current blocking region each include a photonic crystal layer. The photonic crystal layer has a first region and second regions periodically arranged in the in-plane direction in the first region. A refractive index of each of the second regions is different from a refractive index of the first region. The light emitting region includes a first semiconductor layer having a first conductivity type, an active layer having an optical gain, and a second semiconductor layer having a second conductivity type. The first semiconductor layer, the active layer, and the second semiconductor layer are sequentially stacked on top of one another in an emission direction of the light.
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公开(公告)号：EP4300732A1
公开(公告)日：2024-01-03
申请号：EP22759757.2
申请日：2022-02-24
申请人： Kyoto University
IPC分类号： H01S5/18
摘要： A two-dimensional photonic-crystal surface-emitting laser (10) includes: a two-dimensional photonic-crystal layer (12) in which modified refractive index regions (122) having a refractive index different from a refractive index of a plate-like base material (121) are periodically disposed in the base material (121); an active layer (11) provided on one surface side of the two-dimensional photonic-crystal layer (12); and a reflection layer (15) provided on the other surface side of the two-dimensional photonic-crystal layer (12) or on a side opposite to the two-dimensional photonic-crystal layer (12) of the active layer (11) so as to be spaced apart from the two-dimensional photonic-crystal layer (12), wherein a distance d between surfaces of the two-dimensional photonic-crystal layer (12) and the reflection layer (15) facing each other is set such that a radiation coefficient difference Δα v = (α v1 - α v0 ), which is a value obtained by subtracting a radiation coefficient α v0 of a fundamental mode having the smallest loss from a radiation coefficient α v1 of a first higher order mode having the second smallest loss among the light amplified in the two-dimensional photonic-crystal layer (12), is 1 cm -1 or more.
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公开(公告)号：EP4266516A1
公开(公告)日：2023-10-25
申请号：EP21906170.2
申请日：2021-10-29
发明人： KONO, Naoya , ITO, Yuki , FUJIWARA, Naoki , NODA, Susumu , INOUE, Takuya , DE ZOYSA, Menaka , ISHIZAKI, Kenji
摘要： A photonic-crystal surface emitting laser includes a first semiconductor layer, a photonic crystal layer having a refractive index higher than a refractive index of the first semiconductor layer and provided on the first semiconductor layer, and an active layer provided opposite to the first semiconductor layer with respect to the photonic crystal layer. The photonic crystal layer has a first region and a plurality of second regions each having a refractive index different from a refractive index of the first region and periodically disposed in the first region in a plane of the photonic crystal layer. The second regions extend from the photonic crystal layer to the first semiconductor layer.
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公开(公告)号：EP4300731A1
公开(公告)日：2024-01-03
申请号：EP22759758.0
申请日：2022-02-24
申请人： Kyoto University
发明人： NODA, Susumu , DE ZOYSA, Menaka , SAKATA, Ryoichi , ISHIZAKI, Kenji , INOUE, Takuya , YOSHIDA, Masahiro
摘要： A two-dimensional photonic crystal laser includes: a pair of electrodes (a first electrode 171 and a second electrode 172); an active layer (11) provided between the pair of electrodes and configured to generate light of a predetermined wavelength upon being supplied with an electric current from the electrodes; and a two-dimensional photonic crystal layer (12) provided between any one of the pair of electrodes and the active layer (11) and including a plate-shaped base member (121) and a plurality of modified refractive index regions (122) disposed in the base member (121) and having a refractive index different from that of the base member (121), in which the plurality of modified refractive index regions (122) are disposed to be shifted by different shift amounts from respective lattice points of a two-dimensional lattice which are periodically disposed in the base member with a period corresponding to the predetermined wavelength, or/and are disposed at the respective lattice points with different areas, the shift amount or/and the area of each of the plurality of modified refractive index regions (122) is/are modified with a composite modulation period in which a plurality of periods different from each other are superposed on each other, and is/are expressed by a modulation phase Ψ(r↑) expressed using a vector r↑ indicating a position of each of the lattice points of the two-dimensional lattice, a vector k n ↑ indicating a combination of an inclination angle and an azimuthal angle of each of n (n is an integer of 2 or more) laser beams differing in the inclination angle and/or the azimuthal angle from each other, and an amplitude A n and a phase exp(iα n ) determined for each n as Ψ r ↑ = arg ∬ ∑ n A n exp i α n δ k ↑ − k n ↑ exp i k ↑ ⋅ r ↑ d k ↑ and
the amplitude A n and/or the phase exp(iα n ) for each value of n differ(s) from each other in at least two different values of n.-
公开(公告)号：EP3425754A1
公开(公告)日：2019-01-09
申请号：EP17759631.9
申请日：2017-02-13
申请人： Kyoto University
发明人： NODA, Susumu , INOUE, Takuya , JI, Anqi , ASANO, Takashi
摘要： A thermal radiation light source 10 includes a laminated body (10S) including m quantum well structure layers (111, 112) laminated where m is an integer of 2 or more, and including an n-layer (121, 122) and a p-layer (13) sandwiching each of the quantum well structure layers from both sides in the laminating direction wherein the n-layer is made of an n-type semiconductor and the p-layer is made of a p-type semiconductor; a voltage applying unit (151, 152) that is provided for each of the m quantum well structure layers and is directly or indirectly connected to the n-layer and the p-layer sandwiching each quantum well structure layer and that applies a voltage for moving to the n-layers or the p-layer a charge in a quantum well of each quantum well structure layer; a voltage switching unit (161, 162, 17) that switches ON/OFF of application of the voltage to each of the m quantum well structure layers; and a photonic crystal portion (20) disposed in the laminated body or adjacent to the laminated body, and formed so that lights of m kinds of wavelengths resonate, each of the lights of the m wavelengths being generated in each of the m quantum well structure layers corresponding to transition energy between subbands in the quantum well of the quantum well structure layer. The thermal radiation light source 10 can generate a plurality of wavelengths by switching the plurality of wavelengths one by one at a high speed.
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