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1.发明公开Method of Manufacturing an Amorphous Silicon Solar Cell 失效Solarzelle aus amorphem Silizium und Herstellungsverfahren。
公开(公告)号：EP0475666A2
公开(公告)日：1992-03-18
申请号：EP91308087.5
申请日：1991-09-04
IPC分类号： H01L31/075 , H01L31/20 , H01L31/0376
CPC分类号： H01L31/075 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A method for preparing an amorphous silicon solar cell is disclosed which comprises forming, on a substrate, a first electrode, a first conductive film, a thinner first substantially intrinsic film, a thicker second substantially intrinsic film, a second conductive film and a second electrode in this order:
the method being characterized in that at least the thicker second substantially intrinsic film is formed by the sequential steps of:
(a) depositing a semiconductor film containing 20 atom% or less of bound hydrogen and/or bound deuterium to a thickness of from 5 to 1000 Å, and then (b) modifying the deposited film, the sequence of steps being repeated multiple times.
The solar cell formed by the above-mentioned method is particularly excellent in long-term stability.摘要翻译： 公开了一种制备非晶硅太阳能电池的方法，其包括在衬底上形成第一电极，第一导电膜，较薄的第一实质本征膜，较厚的第二实质本征膜，第二导电膜和第二电极 该方法的特征在于，至少较厚的第二实质本征膜通过以下顺序步骤形成：（a）将含有20原子％或更少的结合的氢和/或结合的氘的半导体膜沉积到厚度 为5至1000安培，然后（b）修饰沉积膜，步骤顺序重复多次。 通过上述方法形成的太阳能电池的长期稳定性特别优异。
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2.发明公开Amorphous semiconductor film and process for its production 失效Amorphe Halbleiterschicht und Verfahren zu deren Herstellung。
公开(公告)号：EP0407088A1
公开(公告)日：1991-01-09
申请号：EP90307023.3
申请日：1990-06-27
CPC分类号： C23C14/0682 , C23C14/58 , C23C14/5826 , C23C14/5846 , C23C16/56 , H01L21/02381 , H01L21/0242 , H01L21/02529 , H01L21/02532 , H01L21/02535 , H01L21/0262 , H01L21/02631 , H01L21/3003 , H01L31/202 , H01L31/204 , Y02E10/50 , Y02P70/521
摘要： A method for forming an amorphous semiconductor film which comprises (a) a film-forming step of forming a semiconductor film having not more that 20 atomic percent of bound hydrogen to a thickness of 3 to 1000 Å, and (b) a modifying step of modifying the formed film, the steps being repeated multiple times. The modifying step may involve exposure to discharge atmosphere contained a non-film-forming reactive gas, or to a monovalent ion, or to atomic hydrogen to improve the properties of the semiconductor film. For a halogenated silicon film, modification may involve dehalogenation-hydrogenation.
摘要翻译： 一种形成非晶半导体膜的方法，该方法包括：（a）形成厚度为3〜1000的不超过20原子％的氢的半导体膜的成膜步骤，（b）修饰步骤 修饰成膜，该步骤重复多次。 改性步骤可能包括暴露于含有非成膜性反应气体的放电气氛，或暴露于单价离子或原子氢，以改善半导体膜的性能。 对于卤化硅膜，改性可能涉及脱卤氢化。
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3.发明公开
公开(公告)号：EP0393985A2
公开(公告)日：1990-10-24
申请号：EP90304104.4
申请日：1990-04-17
CPC分类号： C23C16/517 , C23C16/24
摘要： A method for forming an amorphous semiconductor thin film on a substrate, which comprises preparing a reactor fitted with at least a high-frequency electrode for generating glow discharge, applying an A.C. voltage to the electrode, applying a D,.C. voltage to the electrode independently from the A.C. voltage, feeding a reactive gas into the reactor to generate glow discharge of the reactive gas and maintain it, and forming the semiconductor thin film on the substrate.
摘要翻译： 一种在衬底上形成非晶半导体薄膜的方法，包括制备装配有至少一个用于产生辉光放电的高频电极的反应器，向电极施加交流电压，施加D，C。 独立于交流电压对电极施加电压，将反应性气体供给到反应器中以产生反应气体的辉光放电并保持其，并在衬底上形成半导体薄膜。
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公开(公告)号：EP0475666B1
公开(公告)日：1997-04-09
申请号：EP91308087.5
申请日：1991-09-04
IPC分类号： H01L31/075 , H01L31/20 , H01L31/0376
CPC分类号： H01L31/075 , H01L31/202 , Y02E10/548 , Y02P70/521
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公开(公告)号：EP0393985B1
公开(公告)日：1994-11-09
申请号：EP90304104.4
申请日：1990-04-17
CPC分类号： C23C16/517 , C23C16/24
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公开(公告)号：EP0475666A3
公开(公告)日：1992-08-05
申请号：EP91308087.5
申请日：1991-09-04
IPC分类号： H01L31/075 , H01L31/20 , H01L31/0376
CPC分类号： H01L31/075 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A method for preparing an amorphous silicon solar cell is disclosed which comprises forming, on a substrate, a first electrode, a first conductive film, a thinner first substantially intrinsic film, a thicker second substantially intrinsic film, a second conductive film and a second electrode in this order:
the method being characterized in that at least the thicker second substantially intrinsic film is formed by the sequential steps of:
(a) depositing a semiconductor film containing 20 atom% or less of bound hydrogen and/or bound deuterium to a thickness of from 5 to 1000 Å, and then (b) modifying the deposited film, the sequence of steps being repeated multiple times. The solar cell formed by the above-mentioned method is particularly excellent in long-term stability.-
公开(公告)号：EP0393985A3
公开(公告)日：1991-02-06
申请号：EP90304104.4
申请日：1990-04-17
CPC分类号： C23C16/517 , C23C16/24
摘要： A method for forming an amorphous semiconductor thin film on a substrate, which comprises preparing a reactor fitted with at least a high-frequency electrode for generating glow discharge, applying an A.C. voltage to the electrode, applying a D,.C. voltage to the electrode independently from the A.C. voltage, feeding a reactive gas into the reactor to generate glow discharge of the reactive gas and maintain it, and forming the semiconductor thin film on the substrate.
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