公开(公告)号：EP1780302A3

公开(公告)日：2009-03-11

申请号：EP06119741.4

申请日：2006-08-29

申请人： MOORE EPITAXIAL, INC.

发明人： Nishikawa, Katsuhito ,  Moore, Gary M. ,  Inlges, Aaron David

IPC分类号： C23C16/455 ,  C23C16/44

CPC分类号： C23C16/4412 ,  C23C16/4409 ,  C23C16/45504 ,  C23C16/45591

摘要： A process gas is provided to a reactor volume of a semiconductor processing reactor through gas injector ports (120) of a gas ring (106). The process gas flows horizontally from the gas injector ports across a principal surface of a rotating susceptor (108) to exhaust ports (122) of the gas ring. The spent process gas is removed from the reactor volume through the exhaust ports (122).

公开(公告)号：EP1154039B1

公开(公告)日：2006-06-21

申请号：EP01110845.3

申请日：1994-01-21

申请人： MOORE EPITAXIAL, INC.

发明人： Moore, Gary M. ,  Nishikawa, Katsuhito

IPC分类号： C23C16/48

CPC分类号： H01L21/68735 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/481 ,  C23C16/54 ,  C30B25/02 ,  C30B25/10 ,  C30B25/105 ,  C30B25/12 ,  C30B25/14 ,  C30B31/12 ,  C30B31/14 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785 ,  H05B3/0047

公开(公告)号：EP1123992A3

公开(公告)日：2003-09-17

申请号：EP01300396.7

申请日：2001-01-17

申请人： MOORE EPITAXIAL, INC.

发明人： Moore, Gary M. ,  Nishikawa, Katsuhito

IPC分类号： C30B25/14 ,  C23C16/44

CPC分类号： C23C16/45563 ,  C23C16/45589 ,  C30B25/14

摘要： A gas jet assembly includes a gas injector having a longitudinal axis, a first motor coupled to the gas injector and a second motor coupled to the gas injector. The first motor controls a position of the gas injector along the longitudinal axis of the gas injector. The second motor controls the angular position of the gas injector around the longitudinal axis of the gas injector.

公开(公告)号：EP1780302A2

公开(公告)日：2007-05-02

申请号：EP06119741.4

申请日：2006-08-29

申请人： MOORE EPITAXIAL, INC.

发明人： Nishikawa, Katsuhito ,  Moore, Gary M. ,  Inlges, Aaron David

IPC分类号： C23C16/455

CPC分类号： C23C16/4412 ,  C23C16/4409 ,  C23C16/45504 ,  C23C16/45591

摘要： A process gas is provided to a reactor volume of a semiconductor processing reactor through gas injector ports (120) of a gas ring (106). The process gas flows horizontally from the gas injector ports across a principal surface of a rotating susceptor (108) to exhaust ports (122) of the gas ring. The spent process gas is removed from the reactor volume through the exhaust ports (122).

摘要翻译： 通过气体环（106）的气体注入口（120）将工艺气体提供给半导体处理反应器的反应器体积。 处理气体从气体喷射器端口水平地流过穿过旋转基座（108）的主表面到气体环的排气口（122）。 废废气通过排气口（122）从反应器体积中排出。

公开(公告)号：EP1085107A3

公开(公告)日：2003-07-16

申请号：EP00307889.6

申请日：2000-09-12

申请人： MOORE EPITAXIAL, INC.

发明人： Moore, Gary M. ,  Nishikawa, Katsuhito

IPC分类号： C23C16/455 ,  C30B25/14

CPC分类号： C30B25/14 ,  C23C16/45502 ,  C23C16/4558

摘要： A semiconductor processing system includes a reactor (314) and a dispersion head (330) within the reactor. During use, process gas is supplied to the dispersion head. The process gas flows through distributors (332A to 332E) of the dispersion head and into the reactor. The process gas contacts substrates (316) in the reactor thus forming a layer on the substrate. Use of the dispersion head reduces and/or eliminates turbulence and recirculation in the flow of the process gas through the reactor. This results in the formation of layers on the substrates having excellent thickness uniformity. This also allows realization of an abrupt transition between layers formed on the substrates.

摘要翻译： 半导体处理系统包括反应器内的反应器（314）和分散头（330）。 在使用过程中，处理气体被供应到分散头。 处理气体流过分散头的分配器（332A至332E）并进入反应器。 处理气体与反应器中的基底（316）接触，从而在基底上形成一层。 使用分散头减少和/或消除了过程气体流过反应器的湍流和再循环。 这导致在具有优异厚度均匀性的基板上形成层。 这也允许实现在衬底上形成的层之间的陡峭过渡。

公开(公告)号：EP1154039A1

公开(公告)日：2001-11-14

申请号：EP01110845.3

申请日：1994-01-21

申请人： MOORE EPITAXIAL, INC.

发明人： Moore, Gary M. ,  Nishikawa, Katsuhito

IPC分类号： C23C16/48

CPC分类号： H01L21/68735 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/481 ,  C23C16/54 ,  C30B25/02 ,  C30B25/10 ,  C30B25/105 ,  C30B25/12 ,  C30B25/14 ,  C30B31/12 ,  C30B31/14 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785 ,  H05B3/0047

摘要： A structure for use in a reactor for processing a substrate, the structure comprising:a susceptor having a first surface adapted for mounting a substrate thereon; a second surface; and a plurality of openings extending through said susceptor from said first surface to said second surface wherein each opening in said plurality of openings extending through said susceptor from said first surface to said second surface has a surface; and a plurality of substrate support pins; wherein a substrate support pin is movably mounted in each of said plurality of openings and in a first position said substrate support pins are seated in said susceptor when said substrate is supported by said susceptor, and in a second position said substrate support pins hold said substrate above said first surface; and each substrate support pin in said plurality of substrate support, pins has a surface wherein said first position, the surface on the substrate support pin mates with the surface of the opening so as to inhibit gas flow through said plurality of openings in said susceptor during processing.

摘要翻译： 一种用于处理基板的反应器中的结构，所述结构包括：具有适于在其上安装基板的第一表面的基座; 第二表面 以及从所述第一表面延伸穿过所述基座的多个开口到所述第二表面，其中所述多个开口中的每个开口延伸穿过所述基座从所述第一表面到所述第二表面具有表面; 以及多个基板支撑销; 其中基板支撑销可移动地安装在所述多个开口中的每一个中，并且在第一位置，当所述基板由所述基座支撑时，所述基板支撑销位于所述基座中，并且在第二位置，所述基板支撑销保持所述基板 第一表面上方; 并且所述多个基板支撑件中的每个基板支撑销具有表面，其中所述第一位置，所述基板支撑销上的表面与所述开口的表面配合，以便阻止气体流过所述基座中的所述多个开口 处理。

公开(公告)号：EP1123992A2

公开(公告)日：2001-08-16

申请号：EP01300396.7

申请日：2001-01-17

申请人： MOORE EPITAXIAL, INC.

发明人： Moore, Gary M. ,  Nishikawa, Katsuhito

IPC分类号： C30B25/14 ,  C23C16/44

CPC分类号： C23C16/45563 ,  C23C16/45589 ,  C30B25/14

摘要： A gas jet assembly includes a gas injector having a longitudinal axis, a first motor coupled to the gas injector and a second motor coupled to the gas injector. The first motor controls a position of the gas injector along the longitudinal axis of the gas injector. The second motor controls the angular position of the gas injector around the longitudinal axis of the gas injector.

摘要翻译： 气体喷射组件包括具有纵向轴线的气体喷射器，耦合到气体喷射器的第一马达和耦合到气体喷射器的第二马达。 第一马达控制气体喷射器沿着气体喷射器的纵向轴线的位置。 第二电机控制气体注射器围绕气体注射器的纵向轴线的角位置。

公开(公告)号：EP1085107A2

公开(公告)日：2001-03-21

申请号：EP00307889.6

申请日：2000-09-12

申请人： MOORE EPITAXIAL, INC.

发明人： Moore, Gary M. ,  Nishikawa, Katsuhito

IPC分类号： C23C16/455 ,  C30B25/14

CPC分类号： C30B25/14 ,  C23C16/45502 ,  C23C16/4558

摘要： A semiconductor processing system includes a reactor and a dispersion head within the reactor. During use, process gas is supplied to the dispersion head. The process gas flows through distributors of the dispersion head and into the reactor. The process gas contacts substrates in the reactor thus forming a layer on the substrate. Use of the dispersion head reduces and/or eliminates turbulence and recirculation in the flow of the process gas through the reactor. This results in the formation of layers on the substrates having excellent thickness uniformity. This also allows realization of an abrupt transition between layers formed on the substrates.

摘要翻译： 半导体处理系统包括反应器内的反应器和分散头。 在使用过程中，处理气体被供应到分散头。 处理气体流过分散头的分配器并进入反应器。 处理气体与反应器中的基底接触，从而在基底上形成一层。 使用分散头减少和/或消除了过程气体流过反应器的湍流和再循环。 这导致在具有优异厚度均匀性的基板上形成层。 这也允许实现在衬底上形成的层之间的陡峭过渡。